13 – 15.5 GHz 35 W GaN Power Amplifier · TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Data...
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TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Data Sheet Rev. B, September, 2018 - 1 of 15 - www.qorvo.com Product Description Qorvo’s TGA2239 is a Ku-band, high power MMIC amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process. The TGA2239 operates from 13 – 15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5 dB of large signal gain and greater than 32 % power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2239 is fully matched to 50 Ω with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. Ordering Information Part No. Description TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Product Features • Frequency Range: 13 – 15.5 GHz • PSAT : >45.5 dBm @ PIN = 21 dBm • PAE: >32 % @ PIN = 21 dBm • Large Signal Gain: >24.5 dB • Small Signal Gain: 29.5 dB • Bias: VD = +22 V, IDQ = 900 mA, VG = −2.7 V Typical • Process Technology QGaN15 • Chip Dimensions: 5.00 x 6.65 x 0.10 mm • Performance Under CW Operation Applications • Satellite Communications • Data Link • Radar Functional Block Diagram 1 2 4 3 6 5 8 10 9 7
Transcript of 13 – 15.5 GHz 35 W GaN Power Amplifier · TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Data...
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 1 of 15 - www.qorvo.com
Product Description Qorvo’s TGA2239 is a Ku-band, high power MMIC amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process. The TGA2239 operates from 13 – 15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5 dB of large signal gain and greater than 32 % power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2239 is fully matched to 50 Ω with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Lead-free and RoHS compliant. Evaluation boards are available upon request.
Ordering Information
Part No. Description TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Product Features • Frequency Range: 13 – 15.5 GHz
• PSAT : >45.5 dBm @ PIN = 21 dBm
• PAE: >32 % @ PIN = 21 dBm
• Large Signal Gain: >24.5 dB
• Small Signal Gain: 29.5 dB
• Bias: VD = +22 V, IDQ = 900 mA, VG = −2.7 V Typical
• Process Technology QGaN15
• Chip Dimensions: 5.00 x 6.65 x 0.10 mm
• Performance Under CW Operation
Applications • Satellite Communications
• Data Link
• Radar
Functional Block Diagram
1
2 43
6
5
810 9 7
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 2 of 15 - www.qorvo.com
Absolute Maximum Ratings
Parameter Value / Range
Drain Voltage (VD) 29.5 V
Gate Voltage Range (VG) −5 to 0 V
Drain Current (ID1-2) 2.8 A
Drain Current (ID3) 4.3 A
Gate Current (IG1-2) @ TCH = 200 °C −5 to 14.5 mA
Gate Current (IG3) @ TCH = 200 °C −12.5 to 38 mA
Power Dissipation (PDISS), 85°C, CW 117 W
Input Power (PIN), CW, 50 Ω,
VD = +22 V, IDQ = 900 mA, 85 °C 33 dBm
Input Power (PIN), CW, VSWR 3:1,
VD = +22 V, IDQ = 900 mA, 85 °C 30 dBm
Mounting Temperature (30 seconds) 320 °C
Storage Temperature −55 to 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Recommended Operating Conditions
Parameter Value / Range
Drain Voltage (VD) +22 V
Drain Current (IDQ) 900 mA (Total)
Gate Voltage (VG) −2.7 V (Typ.)
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
Parameter Min Typ Max Units Operational Frequency Range 13 – 15.5 GHz
Small Signal Gain – 29.5 – dB
Input Return Loss – >13 – dB
Output Return Loss – >7.5 – dB
Power Gain (PIN = 21 dBm) – >24.5 – dB
Output Power (PIN = 21 dBm) – >45.5 – dBm
Power Added Efficiency (PIN = 21 dBm) – >32 – %
Small Signal Gain Temperature Coefficient – −0.09 – dB/°C
Output Power Temperature Coefficient – −0.028 – dB/°C
Test conditions unless otherwise noted: 25 °C , VD = +22 V, IDQ = 900 mA, VG = −2.7 V Typical, CW
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 3 of 15 - www.qorvo.com
Thermal and Reliability Information Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) Tbase = 85 °C, VD = +22 V, IDQ = 900 mA,
PDISS = 19.8 W
0.81 ºC/W
Channel Temperature (TCH) (No RF drive) 101 °C
Thermal Resistance (θJC) (1) Tbase = 85 °C, CW , VD = +22 V, IDQ = 900 mA
Freq = 15.25 GHz, VD = +22 V, ID_Drive = 5 A,
POUT = 24 dBm, POUT = 45.2 dBm, PDISS = 79 W
0.76 ºC/W
Channel Temperature (TCH) (Under RF drive) 145 °C
Notes: 1. Thermal resistance measured to back of carrier plate. 2. Refer to the Following Document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Power Dissipation
30
35
40
45
50
55
60
65
70
75
80
85
90
12 12.5 13 13.5 14 14.5 15 15.5 16
PD
ISS
(W)
Frequency (GHz)
PDISS vs. Frequency vs. Temperature
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 4 of 15 - www.qorvo.com
Typical Performance – Small Signal
12
15
18
21
24
27
30
33
36
39
12 12.5 13 13.5 14 14.5 15 15.5 16
S21 (
dB
)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
-40 °C
25 °C
85 °C
VD = 22 V, IDQ = 900 mA18
20
22
24
26
28
30
32
12 12.5 13 13.5 14 14.5 15 15.5 16
S21 (
dB
)Frequency (GHz)
Gain vs. Frequency vs. Drain Voltage
18 V
20 V
22 V
Temp = 25 °C
IDQ = 900 mA
18
20
22
24
26
28
30
32
12 12.5 13 13.5 14 14.5 15 15.5 16
S21 (
dB
)
Frequency (GHz)
Gain vs. Frequency vs. Current
900 mA
500 mA
Temp = 25 °C
VD = 22 V
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
12 12.5 13 13.5 14 14.5 15 15.5 16
S11 (
dB
)
Frequency (GHz)
Input Return Loss vs. Frequency vs. Temp.
-40 °C
25 °C
85 °C
VD = 22 V, IDQ = 900 mA
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
12 12.5 13 13.5 14 14.5 15 15.5 16
S22 (
dB
)
Frequency (GHz)
Output Return Loss vs. Frequency vs. Temp.
-40 °C
25 °C
85 °C
VD = 22 V, IDQ = 900 mA
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 5 of 15 - www.qorvo.com
Typical Performance – (CW Operation)
40
41
42
43
44
45
46
47
12 12.5 13 13.5 14 14.5 15 15.5 16
Ou
tpu
t P
ow
er
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. Voltage
PIN = 21 dBmIDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
40
41
42
43
44
45
46
47
12 12.5 13 13.5 14 14.5 15 15.5 16
Ou
tpu
t P
ow
er
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
35
36
37
38
39
40
41
42
43
44
45
46
47
5 7 9 11 13 15 17 19 21 23 25
PO
UT
(dB
m)
Input Power (dBm)
Output Power vs. Input Power vs. Voltage
IDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
Freq. = 14.5 GHz
40
41
42
43
44
45
46
47
12 12.5 13 13.5 14 14.5 15 15.5 16
PO
UT
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. PIN
VD = 22 V, IDQ = 900 mA
19 dBm
20 dBm
18 dBm
Temp. = 25 °C
21 dBm
24 dBm
35
36
37
38
39
40
41
42
43
44
45
46
47
5 7 9 11 13 15 17 19 21 23 25
PO
UT
(dB
m)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
VD = 22 V, IDQ = 900 mA
14.50 GHz
15.50 GHz
13.75 GHz
Temp. = 25 °C
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 6 of 15 - www.qorvo.com
Typical Performance – (CW Operation)
10
15
20
25
30
35
40
45
50
12 12.5 13 13.5 14 14.5 15 15.5 16
PA
E (
%)
Frequency (GHz)
PAE vs. Frequency vs. Drain Voltage
PIN = 10 dBmIDQ = 500 mA
Temp. = 25 °C
PIN = 21 dBmIDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
10
15
20
25
30
35
40
45
50
12 12.5 13 13.5 14 14.5 15 15.5 16
PA
E (
%)
Frequency (GHz)
PAE vs. Frequency vs. Temperature
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
10
15
20
25
30
35
40
45
50
5 7 9 11 13 15 17 19 21 23 25
PA
E (
%)
Input Power (dBm)
PAE vs. Input Power vs. Drain Voltage
Temp. = 25 °C IDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C Freq. = 14.5 GHz
13
16
19
22
25
28
31
34
37
40
43
12 12.5 13 13.5 14 14.5 15 15.5 16
PA
E (
%)
Frequency (GHz)
PAE vs. Frequency vs. PIN
VD = 22 V, IDQ = 900 mA
19 dBm
20 dBm
18 dBm
Temp. = 25 °C
21 dBm
24 dBm
0
5
10
15
20
25
30
35
40
45
50
5 7 9 11 13 15 17 19 21 23 25
PA
E (
%)
Input Power (dBm)
PAE vs. Input Power vs. Frequency
VD = 22 V, IDQ = 900 mA
14.50 GHz
15.50 GHz
13.75 GHz
Temp. = 25 °C
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 7 of 15 - www.qorvo.com
Typical Performance – (CW Operation)
0
1
2
3
4
5
6
12 12.5 13 13.5 14 14.5 15 15.5 16
Dra
in C
urr
en
t (A
)
Frequency (GHz)
Drain Current vs. Freq. vs. Drain Voltage
PIN = 21 dBm
IDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
-1.0
-0.6
-0.2
0.2
0.6
1.0
12 12.5 13 13.5 14 14.5 15 15.5 16
Gate
Curr
en
t (m
A)
Frequency (GHz)
Gate Current vs. Freq. vs. Drain Voltage
PIN = 21 dBmIDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
0
1
2
3
4
5
6
12 12.5 13 13.5 14 14.5 15 15.5 16
Dra
in C
urr
ent
(A)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
-5
0
5
10
15
20
25
30
35
40
12 12.5 13 13.5 14 14.5 15 15.5 16
Gate
Curr
ent
(mA
)
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
0
1
2
3
4
5
6
5 7 9 11 13 15 17 19 21 23 25
Dra
in C
urr
ent
(A)
Input Power (dBm)
Drain Current vs. Input Power vs. Voltage
18 V 20 V 22 V
IDQ = 900 mATemp. = 25 °C
-5
5
15
25
35
45
55
5 7 9 11 13 15 17 19 21 23 25
Gate
Curr
en
t (m
A)
Input Power (dBm)
Gate Current vs. Input Power vs. Voltage
18 V 20 V 22 V
IDQ = 900 mATemp. = 25 °C
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 8 of 15 - www.qorvo.com
Typical Performance – (CW Operation)
0
1
2
3
4
5
6
5 7 9 11 13 15 17 19 21 23 25
Dra
in C
urr
ent
(A)
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
13.75 GHz 14.5 GHz 15.5 GHz
VD = 22 V, IDQ = 900 mA
Temp. = 25 °C
-5
5
15
25
35
45
55
5 7 9 11 13 15 17 19 21 23 25
Gate
Curr
ent
(mA
)Input Power (dBm)
Gate Current vs. Input Power vs. Freq.
13.75 GHz 14.50 GHz 15.50 GHz
VD = 22 V, IDQ = 900 mATemp. = 25 °C
18
19
20
21
22
23
24
25
26
27
28
12 12.5 13 13.5 14 14.5 15 15.5 16
Po
we
r G
ain
(d
B)
Frequency (GHz)
Power Gain vs. Frequency vs. Drain Voltage
PIN = 21 dBmIDQ = 900 mA
20 V
22 V
18 V
Temp. = 25 °C
20
21
22
23
24
25
26
27
28
29
30
12 12.5 13 13.5 14 14.5 15 15.5 16
Po
we
r G
ain
(d
B)
Frequency (GHz)
Power Gain vs. Frequency vs. PIN
18 dBm 19 dBm 20 dBm 21 dBm 24 dBm
VD = 22 V, IDQ = 900 mA
Temp. = 25 °C
20
21
22
23
24
25
26
27
28
29
30
31
32
33
5 7 9 11 13 15 17 19 21 23 25
Pow
er
Gain
(dB
)
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
VD = 22 V, IDQ = 900 mA
14.50 GHz
15.50 GHz
13.75 GHz
Temp. = 25 °C
6
9
12
15
18
21
24
27
30
12 12.5 13 13.5 14 14.5 15 15.5 16
Po
we
r G
ain
(d
B)
Frequency (GHz)
Power Gain vs. Frequency vs. Temperature
VD = 22 V, IDQ = 900 mA
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
-40 °C, PIN = 18 dBm
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 9 of 15 - www.qorvo.com
Typical Performance – Linearity
-40
-35
-30
-25
-20
-15
-10
-5
0
25 30 35 40 45
IM3 (
dB
c)
Output Power Per Tone (dBm)
IM3 vs. Output Power. vs. Frequency
VD = 22 V, IDQ = 900 mA
Temp. = 25 C
17 GHz
18 GHz
16 GHz
1 MHz Tone Spacing
14.50 GHz
15.50 GHz
13.75 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
25 30 35 40 45
IM5 (
dB
c)
Output Power Per Tone (dBm)
IM5 vs. Output Power. vs. Frequency
VD = 22 V, IDQ = 900 mA
Temp. = 25 C
17 GHz
18 GHz
16 GHz
1 MHz Tone Spacing
14.50 GHz
15.50 GHz
13.75 GHz
-40
-35
-30
-25
-20
-15
-10
-5
0
25 30 35 40 45
IM3 (
dB
c)
Output Power Per Tone (dBm)
IM3 vs. Output Power. vs. Voltage
IDQ = 900 mA
20 V GHz22 V
18 V
Freq. = 14.5 GHz, 1 MHz Tone Spacing
Temp. = 25 C
VD = 22 V, IDQ = 900 mA
Temp. = 25 C 1 MHz Tone Spacing
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
25 30 35 40 45
IM5 (
dB
c)
Output Power Per Tone (dBm)
IM5 vs. Output Power. vs. Voltage
IDQ = 900 mA
20 V GHz22 V
18 V
Freq. = 14.5 GHz, 1 MHz Tone Spacing
Temp. = 25 C
-40
-35
-30
-25
-20
-15
-10
-5
0
25 30 35 40 45
IM3 (
dB
c)
Output Power Per Tone (dBm)
IM3 vs. Output Power. vs. Temperature
VD = 22 V, IDQ = 900 mA
25 CGHz85 C
-40 C
Freq. = 14.5 GHz, 1 MHz Tone Spacing-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
25 30 35 40 45
IM5 (
dB
c)
Output Power Per Tone (dBm)
IM5 vs. Output Power. vs. Temperature
VD = 22 V, IDQ = 900 mA
Freq. = 14.5 GHz, 1 MHz Tone Spacing
25 C
85 C
-40 C
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 10 of 15 - www.qorvo.com
Typical Performance – Linearity
-40
-35
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40 45
IM3
(d
Bc)
Output Power Per Tone (dBm)
IM3 vs. Output Power. vs. Current
VD = 22 V
500 mA
900 mA
Freq. = 14.5 GHz, 1 MHz Tone Spacing
Temp. = 25 C
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
20 25 30 35 40 45
IM5 (
dB
c)
Output Power Per Tone (dBm)
IM5 vs. Output Power. vs. Current
VD = 22 V
500 mA
900 mA
Freq. = 14.5 GHz, 1 MHz Tone Spacing
Temp. = 25 C
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
30 35 40 45 50
2n
dH
arm
on
ic (
dB
c)
Output Power (dBm)
2nd Harmonic vs. Output Power. vs. Freq.
13.75 GHz 14.5 GHz 15.5 GHz
VD = 22 V, IDQ = 900 mATemp. = 25 C
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
30 35 40 45 50
2n
dH
arm
on
ic (
dB
c)
Output Power (dBm)
2nd Harmonic vs. Output Power. vs.Temp.
VD = 22 V, IDQ = 900 mA
85 C25 C
Freq. = 14.5 GHz
-40 C
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
30 35 40 45 50
2n
dH
arm
on
ic (
dB
c)
Output Power (dBm)
2nd Harmonic vs. Output Power. vs. Voltage
18 V 20 V 22 V
IDQ = 900 mA
Freq. = 14.5 GHzTemp. = 25 C
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
30 35 40 45 50
2n
dH
arm
on
ic (
dB
c)
Output Power (dBm)
2nd Harmonic vs. Output Power. vs. IDQ
500 mA 900 mA
VD = 22 V
Freq. = 14.5 GHzTemp. = 25 C
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 11 of 15 - www.qorvo.com
Application Circuit
Notes: VG & VD must be biased from both sides, top and bottom.
Bias Up Procedure 1. Set ID limit to 6 A, IG limit to 50 mA
2. Set VG to −5 V
3. Set VD +22 V
4. Adjust VG until IDQ = 900 mA (VG ~ −2.7 V Typ.)
5. Apply RF signal
Bias Down Procedure 1. Turn off RF supply
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
J1
RF In
J2
RF Out
10 9 7
1
2 43
6
5
8
R5
C7
10 uF
C11
0.01 uF
1000 pF
C2 C3
1000 pFC1
1000 pF
C5R7
5.1 Ohms
C9
10 uFC13
0.01 uF
C4
1000 pF
C6
1000 pF
VG = -2.7 V
Typical
VD = 22 V,
IDQ = 900 mA
5.1 Ohms
R6
C8
10 uF
5.1 Ohms
C12
0.01 uF
R8
5.1 Ohms
C10
10 uFC14
0.01 uF
1000 pF
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 12 of 15 - www.qorvo.com
Evaluation Board (EVB) Layout Assembly
Notes: 1. VG & VD must be biased from both sides, top and bottom.
Bill of Materials
Reference Des. Value Description Manuf. Part Number
C1 – C6 1000 pF SLC, +50 V Various –
C7 – C10 10 uF Cap, 1206, +50 V, 20 %, X5R Various –
C11, C14 0.01 uF Cap, 0402, +50 V, 10 %, X7R Various –
R1 – R4 0 Ω Res, 0402, 5 %, SMD Various –
R5 – R8 5.1 Ω Res, 0402, 5 %, ROHS Various –
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 13 of 15 - www.qorvo.com
Mechanical Drawing
Unit: millimeters Thickness: 0.10 Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die
Bond Pad Description Pad No. Symbol Pad Size Description 1 RF In 0.101 x 0.302 RF Input; matched to 50 Ω, DC blocked
2, 10 VG1-2 0.101 x 0.101 Gate voltage 1, bias network is required; see Application Circuit on page 11 as an example.
3, 9 VG3 0.101 x 0.101 Gate voltage 3, bias network is required; see Application Circuit on page 11 as an example.
4, 8 VD1-2 0.302 x 0.143 Drain voltage 1, bias network is required; see Application Circuit on page 11 as an example.
5, 7 VD3 0.503 x 0.161 Drain voltage 3, bias network is required; see Application Circuit on page 11 as an example.
6 RF Out 0.101 x 0.302 RF Output; matched to 50 Ω, DC blocked
7
1
23 4 5
6
8910
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 14 of 15 - www.qorvo.com
Assembly Notes Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300 C to 3 – 4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique. • Force, time, and ultrasonic are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire.
TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, September, 2018 - 15 of 15 - www.qorvo.com
Handling Precautions Parameter Rating Standard
Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) TBD JEDEC Standard JESD22 A114
Solderability Use only AuSn (80/20) solder, and limit exposure to temperatures above 300 C to 3 – 4 minutes, maximum.
RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: [email protected]
Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
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TGA2239
