1200V SiC Mosfets vs Si IGBT - OIC 기술 시장 자료...REVERSE COSTING® –STRUCTURE, PROCESS &...

©2018 by System Plus Consulting | 1200V Silicon IGBT vs SiC MOSFET Comparison 2018 1

22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

1200V Si IGBT vs SiC MosfetsTechnology & Cost Comparison 2018POWER report by Elena BARBARINI September 2018 – sample

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT


Table of Contents

Overview / Introduction 4

o Executive Summary

o Reverse Costing Methodology

Technology & Market 8

Company profile 41

o Infineono STMicroelectronicso Fujio ONSemiconductorso Mitsubishio Rohmo Wolfspeedo Littelfuse

Physical Analysis 59

o 1200V Si IGBT Infineon

IHW40N120R3 IGC99T120T8RL AUIRG4PH50S IRG7PH46UD-EP

STMicroelectronics STP16N65M5 STGWA40S120DF3

Fuji FGW40N120HD

Littelfuse (IXYS) IXGP30N120B3 IXGK120N120A3 IXDN75N120

Mitsubishi CM450DY-24S

ONSemiconductors FGH40N120ANTU NGTB25N120FL2WAG

o 1200V SiC MOSFET Wolfspeed

CMF20120 C2M0080120D C2M0025120D

Rohm SCH2080KE BSM180D12P3C007

STMicroelectronics SCT30N120

Littelfuse LSIC1MO120E0080

Infineon DF11MR12W1M1_B11

Transistor Manufacturing Process 166

Cost & Price Analysis 181

o Summary of the cost analysiso Yields Explanation & Hypotheseso 1200V Si IGBT

Infineon STMicroelectronics Fuji Littelfuse ONSemiconductors Mitsubishi

o 1200V SiC MOSFET Rohm Wolfspeed STMicroelectronics Littelfuse Infineon

Feedback 227

System Plus Consulting services 229


Overview / Introduction

Technology & Marketo Si IGBTo SiC MOSFET

Company Profile & Supply Chain

Physical Analysis

Manufacturing Process Flow

Cost & Price Analysis

Related Reports

About System Plus

Si and SiC Cohabitation

Subject of the report





Physical Analysis



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About System Plus

1200V Analyzed Devices

Manufacturer IGBT Year TechnoCurrent @

100°CDie area

mm²Current density

A/mm²Vce sat

Infineon IHW40N120R3 2012 FS trench 40 xxx xxx 1.55

Infineon IGC99T120T8RL 2013 FS trench 100 xxx xxx 1.75

Infineon AUIRG4PH50S 2015 planar 81 xxx xxx 1.47

Infineon IRG7PH46UD-EP 2013 FS trench 57 xxx xxx 1.7

STMicro STGW40H120DF2 2012 FS trench 40 xxx xxx 2.1

STMicro STGWA40S120DF3 2014 FS trench 40 xxx xxx 1.65

Fuji FGW40N120HD 2008 FS trench 40 xxx xxx 1.8

Littelfuse IXGP30N120B3 2004 PT planar 30 xxx xxx 2.96

Littelfuse IXGK120N120A3 2009 PT planar 120 xxx xxx 1.85

Littelfuse IXDN75N120 2000 NPT 95 xxx xxx 2.2

Mitsubishi CM450DY-24S 2015 CSTBT 137 xxx xxx 1.8

ON Semi FGH40N120ANTU 2006 NPT 40 xxx xxx 2.6

ON Semi NGTB25N120FL2WAG 2016 FS trench 25 xxx xxx 2

Manufacturer SiC MOSFET Year Techno Id (A) @ 100°C Die area Current density Rdson

Wolfspeed/Cree CMF20120 2011 Gen 1 planar 24 xxx xxx 0.08 ohm

Wolfspeed C2M0080120D 2015 Gen 2 planar 24 xxx xxx 0.08 ohm

Rohm SCH2080KE 2012 Gen 2 planar 28 xxx xxx 0.08 ohm

Rohm BSM180D12P3C007 2016 Gen 3 trench 36 xxx xxx 0.03 ohm

ST Microelectronics STC30N120 2012 Gen 1 planar 34 xxx xxx 0.09 ohm

Littelfuse LSIC1MO120E0080 2017 Gen 1 planar 25 xxx xxx 0.08 ohm

Infineon DF11MR12W1M1 2016 Gen 1 trench 50 xxx xxx 0.023 ohm





Physical Analysis



Related Reports

About System Plus

Identified SiC Discrete Transistors

Values based on Datasheet

0

200

400

600

800

1000

1200

0 200 400 600 800 1000 1200 1400 1600 1800

Cu

rren

t (A

)

Voltage (V)

SiC Discrete Transistors Benchmark

Rohm

Wolfspeed

STMicro

Littelfuse

GeneSic

USCi

Availables products



Technology & Market


Physical Analysis o 1200V Si IGBTo Infineono STMicroelectronicso FUJIo Littelfuseo Mitsubishio ON Semiconductors

o SiC MOSFETo Wolfspeedo Rohmo ST Microelectronicso Littelfuseo Infineon



Related Reports

About System Plus

IHW40N120R3

• The package type is a TO247

• Package size : 15.7mm x 20.8mm x 4.83mm

• Pin pitch : 5.44mm

• The package markings include the following markings :

H40R1203

HAE530

The component is composed by a monolithic IGBT

Package opening

Package overview

Gate

(G)

Collector

Emitter

(E)

Gate

(G)

Emitter

(E)Collector

Reference of component



Technology & Market






Related Reports

About System Plus

IHW40N120R3

Die cross section

Die cross section

• Trench depth: xxx µm



Technology & Market






Related Reports

About System Plus

Die cross section

Die cross section

Die thickness



Technology & Market






Related Reports

About System Plus

Die transistor

Die cross section

Die cross section



Technology & Market






Related Reports

About System Plus

Rohm Analysed Devices

SiC dieVoltage breakdo

wn

Current @ 100°C

Die areaCurrent density

Rdson

SCT2080KE 1200V 28 A xxx mm² xxx A/mm² xxx ohm

BSM180D12P3C007 1200 V 36 A xxx mm² xxx A/mm² -

1200V 40A Planar Mosfet1200V 36A Trench Mosfet

MOSFETVoltage

breakdownCurrent at 100°C

Die area Epitaxy depthPitch

WidthWaferCost

Die costAmpere cost (silicon

level)

SCT2080KE 1200V 28 A xxx mm² xxx µm xxx µm $ xxx $ xxx $xxx

BSM180D12P3C007 1200 V 36 A xxx mm² xxx µm xxx µm $ xxx $ xxx $ xxx



Technology & Market


Physical Analysis


Cost & Price Analysiso 1200V Si IGBTo Infineono STMicroelectronicso FUJIo Littelfuseo Mitsubishio ON Semiconductors


Related Reports

About System Plus

Si IGBT Front-End Cost

The front-end cost ranges from $xxxx to $xxx accordingto years.

The main part of the wafer cost in 2018 is due to the xxxx(xxx%).



Technology & Market


Physical Analysis




Related Reports

About System Plus

SiC MOSFET Die Cost

The MOSFET die cost ranges from $xxxx to $xxxxaccording to years.

The Front-end manufacturing represents xxxx of thecomponent cost in 2018.

Probe test, dicing and scrap account for xxxx of thecomponent cost.



Technology & Market


Physical Analysis



Related Reports

About System Plus

Estimated Manufacturer Price

The module manufacturing cost ranges from$xxx to $xxx according to years.

By taking into account a gross margin of 39%for ST (2017 results), the modulemanufacturer price is estimated to range from$xxxx to $xxxxx according to years.

Gross Margin 39.0%

STMicroelectronics



Technology & Market


Physical Analysis




Related Reports

About System Plus

Comparison between ST, Cree and Rohm 1200V SiC MOSFET

C2M0040120DSCT30N120

MOSFETVoltage

breakdownCurrent at 25°C

Wafer size Die area PitchCurrent density

A/mm²Rdson Qg

FOM ohm*nC

LSIC1MO120E0080 1200V 39A xxxmm xxx mm² xx µm xxx 0.08 xxnC xxx

C2M0080120D 1200V 36A xxxmm xxx mm² xxx µm xxx 0.04 xxnC xxx

SCT30N120 1200V 45A xxxmm xxx mm² xxx µm xxx 0.09 xxnC xxx

LSIC1MO120E0080



Technology & Market


Physical Analysis



Related Report

About System Plus

Related Reports

MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT

POWER ELECTRONICS • Status of the Power Electronics Industry 2018• Power SiC 2018: Materials, Devices and Applications• Power Module Packaging 2018: Material Market and Technology

Trends• IGBT Market and Technology Trends 2017

REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING

POWER ELECTRONICS• Rohm SiC MOSFET Gen3 Trench Design Family• Infineon FS820R08A6P2B HybridPACK Drive IGBT Module• STMicroelectronics 1200V SiC MOSFET STC30N120

https://www.i-micronews.com/category-listing/product/igbt-market-and-technology-trends-2017.html


https://www.i-micronews.com/category-listing/product/power-module-packaging-2018-material-market-and-technology-trends.html


https://www.i-micronews.com/category-listing/product/power-sic-2018-materials-devices-and-applications.html


http://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-1200v-sic-mosfet-stc30n120/


http://www.systemplus.fr/reverse-costing-reports/infineon-fs820r08a6p2b-hybridpack-drive-igbt-module/


https://www.i-micronews.com/category-listing/product/status-of-the-power-electronics-industry-2018.html




http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/







Silicon (Si)-based IGBTs have been on the

market for more than 30 years. The

technology has quickly evolved, reducing

the costs and improving performance at

the same time. As Si devices approach

their physical limits, wide-band-gap

devices, in particular made from silicon

carbide (SiC), have emerged on the

market, offering better performance

thanks to their intrinsic properties.

SiC MOSFETs and Si IGBTs are in

competition in various applications in the

1200V range. As of 2018, the SiC MOSFET

market is still small compared to that for

Si IGBTs due to lack of maturity and high

cost. However, market acceptance is

increasing as the technology improves,

costs fall and more device manufacturers

enter the market.

In this report, System Plus Consulting

presents an overview of the state of the

art of 1200V Si IGBTs and SiC MOSFETs.

We highlight the differences in design and

manufacturing processes, and their

impact on device size and production cost.

We have analysed different Si and SiC

devices from Infineon, STMicro-

electronics, Fuji, ON Semiconductor,

Mitsubishi, Rohm, Wolfspeed and

Littelfuse. The report includes detailed

optical and Scanning Electron Microscope

pictures of the transistor design, cross

sections and epitaxy.

This report provides design information,

an estimated production cost for every

transistor and compares the different

components available on the market.

COMPLETE TEARDOWN WITH

• Detailed photos and identification

• Scanning electron microscope and energy-dispersive X-Ray analyses of transistor structures

• Scanning electron microscopy analysis of epitaxy layers

• Manufacturing process flow

• In-depth economic analysis

• Manufacturing cost breakdown

• Estimated sales price

• Comparison between 20 different devices

Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETsfrom eight different manufacturers shows their potential.

REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT

Title: 1200V Si IGBT vs SiC MOSFET Comparison 2018

Pages: 225

Date: September 2018

Format: PDF & Excel file

Price: EUR 4,990

1200V Silicon IGBT vs SiC MOSFET Comparison 2018

IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM – POWER - DISPLAY

TABLE OF CONTENTS

Overview/Introduction

• Executive Summary

• Reverse Costing Methodology

Technology and Market

Company Profile

Physical Analysis

• 1200V Si IGBT

Infineon

o IHW40N120R3, IGC99T120T8RL, AUIRG4PH50S, IRG7PH46UD-EP

STMicroelectronics

o STP16N65M5, STGWA40S120DF3

Fuji

o FGW40N120HD

Littlefuse

o IXGP30N120B3, IXGK120N120A3, IXDN75N120

Mitsubishi

o CM450DY-24S

AUTHORS

ONSemiconductors

o FGH40N120ANTU, NGTB25N120FL2WAG

• 1200V SiC MOSFET

Wolfspeed

o CMF20120, C2M0080120D, C2M0025120D

Rohm

o SCH2080KE, BSM180D12P3C007

STMicroelectronics

o SCT30N120

Littlefuse

o LSIC1MO120E0080

Infineon

o DF11MR12W1M1_B11

Transistor Manufacturing Process

Cost and Price Analysis

• Summary of the Cost Analys

• Yields Explanation and Hypotheses

• 1200V Si IGBT

• 1200V SiC MOSFET

System Plus Consulting Services

1200V SILICON IGBT VS SIC MOSFET COMPARISON 2018

RELATED REPORTS

STMicroelectronics 1200V SiCMOSFET STC30N120The 1st generation 1200V SiCMOSFET device from STMicro-electronics has good current density at a very competitive cost.January 2017 - EUR 3,290*

Rohm SiCMOSFET Gen3 Trench Design FamilyTrench technology in Rohm 650V and 1200V SiC MOSFETs.August 2018 - EUR 3,490*

Infineon FS820R08A6P2B HybridPACKDrive IGBT ModuleThe newest HybridPACK Drive power module from Infineon with EDT2 IGBT technology.June 2017 - EUR 3,490*

Elena holds a Master in Nano-technologies and aPhD in Power Electronics.

Elena Barbarini is in charge ofcosting analyses for MEMS, ICand Power Semiconductors.She has a deep knowledge ofElectronics R&D and Manu-facturing environment.

Véronique Le Troadec hasjoined System Plus Consultingas a laboratory engineer.Coming from Atmel Nantes,she has extensive knowledge infailure analysis of components

and in deprocessing of integrated circuits.

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WHAT IS A REVERSE COSTING®?

Reverse Costing® is the process of disassembling a device (or asystem) in order to identify its technology and calculate itsmanufacturing cost, using in-house models and tools.

IC Price+

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MEMS Price+

Power CoSim+

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SYSCost+

CONTACTS

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ABOUT SYSTEM PLUS CONSULTING

System Plus Consulting is specialized

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A complete range of services and

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System Plus Consulting offers powerful costing tools to evaluate the production cost and selling price from

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ORDER FORMPlease process my order for “1200V Silicon IGBT vs SiC MOSFET Comparison 2018” Reverse Costing® – Structure, Process & Cost Report Ref: SP18388

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REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT1200V SILICON IGBT VS SIC MOSFET COMPARISON 2018

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1200V SiC Mosfets vs Si IGBT - OIC 기술 시장 자료...REVERSE COSTING® –STRUCTURE, PROCESS &...

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