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    Faculty of Engineering

    Department

    OfElectrical & Electronic Engineering

    EEE 3100

    Electrical & Electronic Technology

    Lab 10: DC Analysis for Bipolar Junction Transistor (BJT)

    Name: NOOR SUHAIDA GALIP

    Matric No: 140007

    Lecturer: PN RIBHAN ZAFIRA ABDUL RAHMAN

    TABLE OF CONTENT:

    PAGES:

    1. TITLE

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    2. OBJECTIVE 1

    3. EQUIPMENTS & COMPONENTS 1

    4. RESULT 3

    5. DISCUSSION 5

    6. CONCLUSION 6

    7. REFERENCES 6

    8. APPENDIX 7

    LAB 10: DC Analysis for Bipolar Junction Transistor (BJT).

    OBJECTIVE: To determine operational range of a BJT.

    EQUIPMENTS & COMPONENTS:

    1) Resistors

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    2) Bipolar Junction Transistor (BJT)

    3) Capacitor

    4) Function generator

    5) Multimeter

    6) Oscilloscope

    7) Connecting wires

    RESULT

    1. Transistor diagram and its symbol.

    Simple circuit using a transistor

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    Schematic symbols for PNP- and NPN-type BJT.

    2. By using a multimeter,

    a) IB = 47.7 mA

    b) IC = 5.34 mA

    c) VCE = 0.426 V

    d) VB = 12.63 V

    e) VC = 11.60 V

    f) VBC = 1.03 V

    3. Example calculation:

    VCC = IBRB + VBE

    IB = VCC - VBE

    RB

    = 12 0.7

    270

    = 4 1 .8 5 A

    IC = IB

    = 110 (41.85 A)= 4.6035 mA

    VCC = ICRC + VCE

    VCE = 12 (4.6035 mA) (2.2 k)

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    = 1.87 V

    VC = VCE = 1.87 V

    VB = VBE = 0.7 V

    VBC = 0.7 1.87 = - 1.17 V

    DISCUSSION

    The BJT is the most common transistor. It consists of three sections of

    semiconductors: an emitter, a base and a collector. In an npn-type BJT, the

    emitter and the collector are made of n-type semiconductors and the base is

    made of a p- type semiconductor. In a pnp-type BJT, it is the other way

    round. The three sections of a BJT form two p-n junctions: the emitter-base

    junction and the collector-base junction. Individually, these junctions are not

    different from the p-n junction in a diode. The unique characteristics of the

    BJT originate from an interaction between these two junctions.

    The operating mode of a BJT depends on how its junctions are biased.

    The BJT is biased to operate in the active mode in applications where it is

    used as an amplifier. In the cut-offand saturation modes, the BJT behaves

    like an open and closed switch, respectively. Most BJTs in digital circuits (logic

    gates, memory) operate in these two modes. The reverse active mode is

    rarely used and is listed here for reference.

    In a typical transistor circuit, the transistor is connected to an input

    circuit and an output circuit or load. (Additional components are often

    necessary to bias the BJT.) One of the terminals of the BJT (E, B or C) is

    connected to both the input and the output circuit. The configuration of a BJT

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    in a circuit is named after this common terminal. Thus, we speak ofcommon-

    emitter, common-base and common-collectorconfigurations.

    Schematic symbols for PNP- and NPN-type BJTs

    CONCLUSION

    From this experiment, we are able to determine operational range of

    bipolar junction transistor (BJT).

    APPENDIX

    1) Resistors

    2) Bipolar Junction Transistor (BJT)

    3) Capacitor

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    4) Function generator

    5) Multimeter

    6) Oscilloscope

    7) Connecting wires

    REFERENCES

    1. Lab manual EEE3100.

    2. Giorgio Rizzoni, Principle and Applications of Electrical Engineering,

    McGraw Hill, fourth edition.

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