1. Relationship Between Voltage and S 21 in a Two-port Network
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Transcript of 1. Relationship Between Voltage and S 21 in a Two-port Network
Lecture #7 Richard Li, 2009 1
1. Relationship Between Voltage and S21 in a Two-port Network
2. Characterizing a Chip Capacitor by Means of S21 Testing
3. “Zero” Capacitor o What is “Zero” capacitor? ” o Selection of the “Zero” Capacitor o Bandwidth of the “Zero” Capacitor o Combined Effect of Multiple “Zero” Capacitors o “Zero” Capacitor in RFIC Design
4. Characterizing a Chip Inductor by Means of S21 Testing
5. “Infinite” Inductor o Chip Inductor is a Good Assistant in Grounding
6. Characterizing a Chip Resistor by Means of S11 Testing o Special Characters of Chip Resistor
Lecture 27 : Characterization of Chip Parts Richard Chi-Hsi Li 李缉熙
Cellular phone: 13917441363 (PRC)Email : [email protected]
Lecture #7 Richard Li, 2009 2
1
2
02
0121 2
E
v
R
RS
E2 = 0,
Two-portNetwork
Port 2Port 1
E2E1
v1 v2
R02R01
Figure 1 Source and load parameters in a two-port network
500201 RR Ω,
1
221 2
E
vS
• Relationship Between Voltage and of S21 in a Two-port Network
[Ralph S. Carson, “High-Frequency Amplifiers,” (Book) , John Wiley & Sons, Inc., 1975.]
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2. Characterizing a Chip Capacitor by Means of S21 Testing
Figure 2 S21 testing for a chip capacitor.
Chip C
DTU
GND
50 Ω 50 Ω
Network Analyzer(S21 testing)
Port 1 Port 2
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2
2
222
1
2
150
1150
150
CLR
CLR
CLR
CLRR
E
v
SS
SSSSSSS
CLS
SRF
1
S
S
R
R
E
v
501
2
S
SSRF R
R
E
vS
502log202log20,
1
221
1102
50
20,21
SRFSSR
CL
SRF
S 2
1
specifiedCC
LS
RS
C
Port 2Port 1
E1
v1 v250 ohm 50 ohm
Figure 3 Replacement of “Two port Network” in Figure 2 by chip capacitor’s equivalent model
.
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Figure 4 S21 Frequency response of chip capacitor C= Cspecified =15 pF with test setup as shown in Figure 14A.1.
f , GHz
0
-20
-40
-60
20
40
S21, dB
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2
-10
-30
-50
30
10
15 pF
Cspecified = 15 pFS21,SRF = -45.1dBSRF = 1.394 GHz
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Cspecified, pF
fSRF = 5400 / C 1/2
(MHz) (pF)
1. 8 pF < Cspecified < 18000 pFSize : 30x60 & 50x80 mils2
10000
10
100
1000
1000010 100 1000 10000000
10000001000001
InductiveApplication Region
CapacitiveApplication Region
Figure 5 Plot of the self-resonant frequency fSRF vs specified value of chip capacitor Cspecified, extrated from testing of MuRata chip capacitors.
fSRF , MHz
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SRFC Value of chip capacitor, (MHz) (pF)
40 18,000 150 1,296 450 144 500 117
800 46 900 36
1,000 29 1,500 13 2,400 5.1 5,400 1.0
Table 1 Some important SRFC (Self Resonant Frequency) values of chip capacitors
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LS = 0.86 nH
1. 8 pF < Cspecified < 18000 pFSize : 30x60 & 50x80 mils2
1
0.01
0.1
1000010 100 1000 1000000010000001000001
Cspecified, pF
LS , nH
Figure 6 Plot of in-series parasitic inductance LS vs specified capacitance Cspecified, extracted from testing of MuRata chip capacitors.
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RS = 0.08 to 0.52 Ω
1. 8 pF < Cspecified < 18000 pFSize : 30x60 & 50x80 mils
1
0.01
0.1
1000010 100 1000 1000000010000001000001
Cspecified, pF
RS , Ω
Figure 7 Plot of in-series resistance RS vs specified capacitance Cspecified, extrated from testing of MuRata chip capacitors.
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3. “Zero” Capacitor
o What is a “Zero” Capacitor?
Vcc
Q1
R1
L1
Figure 8 “Zero” capacitor functions as a bypass or a blocking capacitor
In
Out
Bias
DC Blocking Capacitor
DC Blocking Capacitor
AC BypassCapacitor
AC BypassCapacitor
GND
GND
GND
“Zero” Capacitor = AC Bypass capacitor = DC Blocking capacitor
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(b) Equivalent of an actual capacitor
Figure 9 An actual chip capacitor and its equivalent
(a) An actual chip capacitor
C C
L
r
jCZ c
1
Theory
Chip “zero” capacitor
LCSRFc 2
1
o Selection of the “Zero” Capacitor
specicied
cC
SRF5400
For MuRata capacitorsCspecified = 0.5 pF to 18000
pF. for both sizes W x L = 50 x 80 mils and 30
x 40 mils
where SRFc = Self resonant frequency in MHz, Cspecified= Specified capacitance by the manufacturer in pF.
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Figure 10 RF or AC grounded by a “zero” capacitor on a PCB (Printed Circuit Board).Top metallic area; P : Point to be grounded;Bottom metallic area; G : Reference ground point..Conductive via from top to bottom;“Zero” capacitor
G
PC B
P
“Zero” capacitor
Vdd
* “Zero” capacitor on PCB in narrow band case
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Figure 11 RF or AC grounded by more than one “zero” capacitor on a PCB (Printed Circuit Board).
Top metallic area; P : Point to be grounded;Bottom metallic area; G : Well-grounded point.Conductive via from top to bottom;“Zero” capacitor
G
PC B
P
“Zero” capacitors
Vdd
* “Zero” capacitor on PCB in wide band or multi-band case
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* Number of “zero” Capacitors in a RF system are much more than in a RF block
Top metallic area; P : Point to be grounded;Bottom metallic area; G : Reference ground point..Conductive via from top to bottom;“Zero” capacitor
Figure 12 Number difference of “zero” capacitor in a RF system and in a RF block
Vdd1
RF system
(b) More “Zero” capacitors for a RF block
Vdd2
Vdd3
Vdd
(a) 1 or 2 “Zero” capacitors for a RF block
Vdd
RF blockRF block
or
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* “Zero” Capacitors in RFIC
Figure 13 “Zero” capacitor works in the RF/AC grounding for a IC die
Bond wirePadTop metallic areaBottom metallic areaIC dieRunner in IC die
Runner on IC dieSoldering pad on PCBConductive via from top to bottom Chip “zero” CapacitorGround ring of RF block
PCB (Printed Circuit Board)
Chip “zero” capacitor
RF Block
IC die
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o Bandwidth of the “Zero” Capacitor
Figure 14 S21 testing for a chip capacitor.
Chip C
DUT
GND
50 Ω 50 Ω
Network Analyzer(S21 testing)
Port 1 Port 2
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f , GHz
0
-20
-40
-60
20
40
S21, dB
Cspecified = 15 pFS21,SRF = -45.1dBSRF = 1.394 GHz
Figure 15 S21 frequency response of a chip capacitor tested with setup as shown in Figure 14.11
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2
-10
-30
-50
30
10
BW =1.475 - 1.310 = 0.165 GHz
BW =1.600 - 1.230 = 0.370 GHz
BW =1.422 - 1.352 = 0.070 GHz
15 pF
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f , GHz
0
-20
-40
-60
20
40
S21, dB
Figure 16 Frequency bandwidth 250 MHz =1.560 -1.310 GHz is covered by a “zero” capacitor combined by two capacitors C= 15 pF and C= 13 pF connected together in parallel.
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2
-10
-30
-50
30
10
Cspecified = 13 pFS21,SRF = -42.6 dBSRF = 1.456 GHz
BW =1.560 - 1.310 = 0.250 GHz
Cspecified = 15 pFS21,SRF = -45.1 dBSRF = 1.394 GHz
15 pF 13 pF
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* Combined Effect of Multiple “Zero” Capacitors
An interesting question is then raised:
Does a resultant SRF due to the combination of all the individual “zero” capacitors exist, superseding the SRFs of the individual “zero” capacitors, since these “zero” capacitors are connected between the positive terminal of DC power supply or DC bias and a real grounded point, GND, in parallel?
According to empirical experimentation, a resultant SRF combined by individual “zero” capacitors may appear while the behavior of the individual“zero” capacitors is unchanged.
The resultant SRF is usually located outside of the expected bandwidth.
Figure 17 Modified equivalent model of “zero” chip capacitor by adding of soldering pads and runners for RF modules
Runner on IC die “Zero” chip capacitorSoldering pad on PCB
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4. Characterizing a Chip Inductor by Means of S21 Testing
Figure 18 S21 testing for a chip inductor.
50 Ω 50 Ω
Network Analyzer(S21 testing)
Port 1 Port 2
Chip L
DTU
GND
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50 Ω
Two-port network
Port 2Port 1
E1
v1 v250Ω
LRP
CP
Figure 19 Replacement of “Two port Network” in Figure 14A.3 by chip inductor’s equivalent model
2
12
2
2
1
2
111100
50
PPPp LC
CRR
E
v
2
12
2
2
1
221
111100
100log202log20
PPPp LC
CRR
E
vS
2
1
1
P
SRF
LC
PSRF R
S
100
100log20,21
110100 20
,21 SRFS
PR
LC
SRF
P 2
1
specifiedLL
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f , GHz
0
-20
-40
-60
20
40
S21, dB
Figure 20 S21 Frequency response of chip inductor L= 62 nH with test setup as shown in Figure 14A.2.
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2
-10
-30
-50
30
10
L = Lspecified S21,SRF = - 46.7 dBSRF = 1.57 GHz
62nH
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SRFL Value of chip inductor, (MHz) (nH)
210 1,800 300884 450393 500318 800124 900981,00079.61,50035.42,40013.85,4002.7
Table 2 Some SRFL (Self Resonant Frequency) values of chip inductors
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fSRF = 8920 / L 1/2
(MHz) (nH)
22 nH < Lspecified,< 1800 nH
10000
100
1000
1000100 1000010
Lspecified,, nH
fSRF , MHz
CapacitiveApplication Region
InductiveApplication Region
Figure 21 Plot of the self-resonant frequency fSRF vs specified value of chip inductor Lspecified, extracted from testing of MuRata chip inductors.
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Lspecified, nH
CP = 0.2 pF
22 nH < Lspecified < 1800 nH
10
0.1
1
1000100 1000010
CP , pF
Figure 22 Plot of in-parallel capacitance CP vs specified inductance Lspecified, extracted from testing of MuRata chip inductors.
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1000000RP = 2580 x L 1/2
(Ω) (nH)
22 nH < Lspecified < 1800 nH
1000
10000
100000
1000100 1000010Lspecified, nH
RP , Ω
Figure 23 Plot of in-parallel resistance RP vs specified inductance Lspecified, extrated from testing of MuRata chip inductors.
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o Chip Inductor is a Good Assistant
specicied
LL
SRF8920
where SRFL = Self resonant frequency in MHz,Lspecified= Specified capacitance by the
manufacturer in nH.
For MuRata inductorsLspecified = 22 nH to
1800 nH.
Theory
Chip “Infinite” inductor
LCSRFL 2
1
jLZL
r
C L
Figure 24 An actual inductor and its equivalent
(a) An actual inductor (b) Equivalent of an actual inductor
C
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Figure 25 RF or AC grounded by a “zero” capacitor with assistance of an “infinite” inductor on a PCB.
Top metallic area; P : Point to be grounded;Bottom metallic area; GND : Reference grounded point.Conductive via from top to bottom;“Zero” capacitor“Infinite” inductor
PC B
Vdd or Vcc
GNDP
“Zero” capacitor
“Infinite” inductor
Po
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Figure 26 “Zero” capacitor is connected between the P+ guard ring in IC die and the ground frame on PCB
PCB (Printed Circuit Board)
Chip “zero” capacitor
RF Block
IC die
Bond wirePadTop metallic areaBottom metallic areaIC dieRunner in IC die
Runner on IC dieSoldering pad on PCBConductive via from top to bottom Chip “zero” CapacitorGround ring of RF block
o “Zero” Capacitor in RFIC Design
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Figure 27 Difference of “Zero” capacitors RF/AC grounding for a IC die and for a RF module or a RF block module
Bond wirePadIC dieRunner in IC die
Runner on IC dieSoldering pad on PCBChip “zero” Capacitor
(a) “Zero” capacitor grounding for a RFIC die (b) “Zero” capacitor grounding for a RF module or for a RF block built by discrete parts
• A runner on PCB from the point to be grounded to a soldering pad,• Soldering pad on PCB,• A chip “zero” capacitor,• Soldering pad on PCB,• A runner on PCB between the chip “zero” capacitor and the ground frame on PCB.
• A shout runner in IC die from the ground ring die to a tiny pad, • A tiny bond pad in IC die, • A bond wire in the air between the tiny pad in IC die and the bonding pad on PCB,• A bonding pad on PCB• A runner on PCB from the bonding pad on PCB to the soldering pad on PCB,• Soldering pad on PCB,• A chip “zero” capacitor,• Soldering pad on PCB,• A runner on PCB between the chip “zero” capacitor and the ground frame on PCB.
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5. Characterizing a Chip Resistor by Means of S11 Testing
Figure 28 S11 testing for a chip resistor.
50 Ω
Network Analyzer(S11 testing)
Port 1 Port 2
Chip RDTU
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Port 1
E1
50 Ω
One-port Network
RP CP LP
(or)
ZS
Figure 29 Single-port S-parameter measurement of a chip capacitor
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1000000
10
100000
10 100 1000 100000
Rspecified, Ω
RP , Ω
1000
100
1
10000
RP = Rspecified , if f < 100 MHz
f < 100 MHzf = 500 MHz f = 1000 MHz
10000
f = 1500 MHzf = 2000 MHz
Figure 30 Plot of in parallel resistance RP vs. specified resistance Rspecified, extrated from testing of MuRata chip resistors.
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10
1000010 100 1000 100000Rspecified, Ω
CP , pF
1.0
0.1
f < 100 MHzf = 500 MHz f = 1000 MHz
f = 1500 MHzf = 2000 MHz
CP = 0.65 to 0.90 pF , if 150 Ω < Rspecified <51000 Ω
Figure 31 Plot of in-parallel capacitance CP vs specified resistance Rspecified, extrated from testing of MuRata chip resistors.