1 New build-up technique with copper bump AGP Process.
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Transcript of 1 New build-up technique with copper bump AGP Process.
![Page 1: 1 New build-up technique with copper bump AGP Process.](https://reader037.fdocuments.in/reader037/viewer/2022110303/551679c75503469d698b5b07/html5/thumbnails/1.jpg)
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New build-up techniqueNew build-up techniquewith copper bumpwith copper bump
AGP Process
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AGP Build-up PCBAGP Build-up PCB
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AGP Build-upAGP Build-up PCB Section FigurePCB Section Figure Multi-via Structures
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Cross sectional view of AGP
Photo. 1+4+1 build-up PWB using AGP
To use copper bump as a connection between layers
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Cross sectional view of AGP
Photo. 2+2+2 build-up PWB using AGP
Photo. 3+4+3 build-up PWB using AGP
Copper bump L1 alnd
L2 land
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Concepts of developing AGP
1. Possible to reduce land size
2. Possible to stack vias
3. Possible to form bumps of different diameters in a one-step batch process
4. Improvement of reliability of electrical connection
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Benefits of AGPBenefits of AGP
1. Possible to reduce diameter of via AGP bump is formed by etching method. It is possible to form micro-bumps with a diameter 50micron.
2. Possible to stack vias easily
AGP enables very flat land surface without via-filling.
It is suitable process for multi-layer build-up structure.
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Benefits of AGPBenefits of AGP3. High reliability of connecting Land to via joining is achieved by copper plating. This enables high reliability of electrical connection and high land- pull strength.
4. Possible to form bumps of different diameters By selecting the size of the etching mask, the bump of a different diameter can exist together. Larger bump can be used for the part where high heat conductivity or low electric resistance are necessary.
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Benefits of AGPBenefits of AGP
5. Low surface roughness of outer copper
Outer layer is formed by panel-plating. It has sufficient peel strength even if there is no anchor effect. This smooth side contributes to the high frequency characteristic.
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Structure that AGP enablesStructure that AGP enables1. Multi build-up structure with stacking via
2. Flip chip pad with micro via connection
High density PWBs can be
achieved by AGP.
It is suitable for MCM.
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Structure that AGP enablesStructure that AGP enables
3. Land-less pattern Via and line can be connected directlywithout forming land.It will bring drastic higher wiring density.
Upper view
Because the bump layer is formed by the etching,It is possible to process it to various shape.That enables frame as illustrated, it brings rigidlyImprovement.It is also as possible to build the coaxial cableStructure into.
4. Rigidly improvement by copper frame
3D view
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Structure that AGP enablesStructure that AGP enables
5. Heat management by forming thermal via
Improvement of heat dissipation effect
Forming chip size heat sinkBy AGP process Plugged via by using
Conductive paste
BGA/CSP
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Schematic illustration of AGP processSchematic illustration of AGP process
Core board
Copper plated on core board
Forming bumps by etching
Forming dielectric layer(Liquid epoxy)
Copper plating as outer layer
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AGPAGP Process Process
Inner Layer Pattern
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AGPAGP Process Process
Copper Plating
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AGPAGP Process Process
Bump Masking
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AGPAGP Process Process
Bump Etching
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AGPAGP Process Process
Dielectric layer
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AGPAGP Process Process
External Layer Pattern
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Manufacturing Spec
Minimum land size of outer layer 100m
Minimum size of top of via 50m
Dielectric thickness of AGP layer30~60m
Dielectric consists of epoxy resinNot including glass-cross
Minimum size of bottom of via 75m
Minimum land size of inner layer 150 m
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Result of durability testsResult of durability testsTests Conditions Standards Results Judgments
Humidity bias test(Cyclic)
IPC-SM-840CClass T
Insulation resistance 1x108 or morePeel strength of conductive 600g/cm or more
6x1011
1.0kg/cm
OK
OK
Humidity bias test(Steady state)
40℃/90%R.H./50V240hrs
85 ℃/85%R.H./30V100hrs
Insulation resistance 1x108 or more Peel strength of conductive 600g/cm or moreInsulation resistance 1x108 or morePeel strength of conductive 600g/cm or more
2x1011
1.0kg/cm
2x1011
1.0kg/cm
OK
OK
OK
OK
PCT 121 ℃/2atm/100%R.H./96h130℃/2.3atm/85%R.H./5.5V/168h
Insulation resistance1x108 or more
3x1011 OK
Dielectric strength Applying 500V in5sec and keeping1min
No dielectric breakdown 2x1012 OK
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Result of durability testsResult of durability tests
Tests Conditions Standards Results Judgments
Thermal shock test(Vapor phase)
-65℃/30min125 ℃/30min1000cycles
Change in resistance10% or less
0.5% OK
Thermal shock test(Hot oil)
260 ℃/5sec20 ℃/15sec 300cycles
Change in resistance10% or less
2.0% OK
Solder bath test 260 ℃/10sec3times
Change in resistance10% or less
1.0% OK
High temperature storage
125 ℃/100hrs
Change in resistance10% or lessInsulation resistance
1x108 or morePeel strength ofConductive 600g/cm or more
0.5%
1x1010
1.0kg/cm
OK
OK
OK