1 Comparison between Experimental & Numerical Results for Single Point Diamond Turning (SPDT) of...
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![Page 1: 1 Comparison between Experimental & Numerical Results for Single Point Diamond Turning (SPDT) of silicon carbide (SiC) John Patten, Director Manufacturing.](https://reader036.fdocuments.in/reader036/viewer/2022081519/56649d795503460f94a5d4f9/html5/thumbnails/1.jpg)
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Comparison between Experimental & Numerical Results for Single Point Diamond Turning (SPDT)
of silicon carbide (SiC)
John Patten, Director Manufacturing Research Center
Western Michigan University
NAMRC 35 May 22, 2007
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Agenda
• Introduction to Silicon Carbide (SiC)• Background of HPPT Research• Background of ceramic simulations• 2-D orthogonal machining simulations
– Simulations of edge turning– Simulation of plunge cutting– Simulations of fly-cutting
• 3-D scratching simulations– Silicon Carbide
• Summary of results• Conclusions and future work
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Silicon Carbide – Advanced Engineering Ceramic
• Types of SiC • Properties and applications of SiC• Problems in manufacturing
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Research background – HPPT of ceramics
• Define HPPT• HPPT or amorphization of ceramics is responsible for the
ductile behavior of these brittle materials.• HPPT has been identified in Si and Ge, and other materials.• Ductile material removal has been achieved in SiC under
nanometer cutting conditions and phase transformation of chips has been recorded.
• Some factors contributing to ductile material removal at room temperature
– machining depth < tc
– negative rake angle tools with small clearance– sharp edge radius
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Developments in simulations of ceramic machining
• Introduce AdvantEdge• Developments in AdvantEdge
– 2-D simulations of Silicon Carbide in the nanometer regime– 2-D simulations of Silicon Carbide using DP model– Newly developed 3-D scratching simulation capability
• Other developments outside AdvantEdge– FEA simulation of polycrystalline alpha-SiC– MD simulations of nanoindentation in SiC
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2-D orthogonal machining simulations of SiC
• Three types of experiments were simulated– Edge turning of SiC– Plunge cutting of SiC– Fly-cutting of SiC
Visualization of 3-D turning operation in 2-D
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Typical setup for 2-D orthogonal simulations
Parameters Geometry
Tool
Cutting edge radius, r
Rake angle, α
Clearance angle, β
Workp
iece
Workpiece length, l
Workpiece height, h
Pro
cess
Depth of Cut, feed
Length of Cut, loc
Cutting Speed, v
Width of cut
Coefficient of friction
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Material model for simulations of SiC
0..3 12 IJ
The DP yield criterion is given by
κ is given by
ct
ct
..2
J2 is given by
213
232
2212 6
1 J
For a uniaxial state of stress
11 IThus J2 is given by
3
21
2
J
This gives κ of 16.25 GPa and α of -0.375 .
Here, σt = H/2.2 and σc = H
For H=26 GPa, κ becomes 16.25 GPa.
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Simulations of edge turning
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Edge turning simulations of SiC
Variable Definition Value Workpiece-Tool geometry
tool cutting edge radius 50 nm
tool rake angle 0º & -45º
tool clearance angle 5º & 50º
In-feed/uncut chip thickness(50, 100, 250, 300, 500)
nm
work piece velocity 0.05 m/s
Width of cut 250 µm
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Simulation with achieved depth of approx. 220 nm
Note the deflection of workpiece material
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Results from edge turning simulations, 0º rake, 5º clearance
0.45 0.30
1.001.25
3.65
6.00
0.00
2.00
4.00
6.00
100 300 500
Depth (nm)
Cu
ttin
g F
orc
e (N
)
Experiment Simulation
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Results from edge turning simulations, 0º rake, 5º clearance
0.611.00
1.90
0.90
1.75
2.50
0.00
2.00
4.00
6.00
100 300 500
Depth (nm)
Th
rust
Fo
rce
(N)
Experiment Simulation
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Results from edge turning simulations, -45º rake, 5º clearance
1.52.32.3
10.2
0.0
2.0
4.0
6.0
8.0
10.0
12.0
50 250
Depth (nm)
Cu
ttin
g F
orc
e (N
)
Experimental
Simulation
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Results from edge turning simulations, -45º rake, 5º clearance
5.0
9.0
4.8
19.1
0.0
4.0
8.0
12.0
16.0
20.0
50 250
Depth (nm)
Th
rust
Fo
rce
(N)
Experimental
Simulation
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Simulations of plunge cutting experiments
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2-D plunge cutting simulations of SiC
• Using a flat nose tool, machining was performed across the wall thickness of a tube of polycrystalline SiC.
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Parameters for plunge-cutting simulations of SiC
Parameters Value Unit Geometry
Tool
Cutting edge radius, r 50.0 nm
Rake angle, α -45.0 deg
Clearance angle, β 11 & 0 deg
Workp
iece
& P
roce
ss
Workpiece length, l 3.0 µm
Workpiece height, h 1.0 µm
(Actual ) Depth of Cut, doc
24.0 nm
Width of cut 3.0 mm
Length of Cut, loc 2.0 µm
Cutting Speed, v 5.0 m/s
coefficient of friction, COF 0.1 -
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Simulation with achieved depth of 25 nm
Note the deflection of workpiece material
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Results from simulations of SiC
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Flycutting experiment
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Flycutting experiment setup
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Force results from flycutting of SiC
• 4 distinct cuts made• First cut overlapped 6 times• Significant noise generated towards end of the experiment
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Results from flycutting of SiC
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Results from cut 1, cut 2 & cut 3
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Results from cut 4
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Simulations of flycutting
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Simulations of flycutting experiments
Parameters Value Unit Geometry
Tool
Cutting edge radius, r 40.0 nm
Rake angle, α -45.0 deg
Clearance angle, β 5 deg
Wo
rkpie
ce &
Pro
cess
Workpiece length, l 20.0 µm
Workpiece height, h 7.5 µm
In-Feed, feed 61 & 75 nm
Length of Cut, loc 15.0 µm
Cutting Speed, v 0.518 m/s
Friction factor 0.1 -
Method A
Method B
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1.16E+11
1.02E+11
1.19E+11 1.17E+11
0.00E+00
2.00E+10
4.00E+10
6.00E+10
8.00E+10
1.00E+11
1.20E+11
1.40E+11
61 nm 75 nm
No
rmal
ized
fo
rce
(N/m
m^
2)
Experiment Simulation
Results of simulations, Method A
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Results of simulations, Method B
1.162E+111.018E+11
2.47E+11
1.99E+11
0.000E+00
5.000E+10
1.000E+11
1.500E+11
2.000E+11
2.500E+11
3.000E+11
61 nm 75 nm
No
rmal
ized
fo
rce
(N/m
^2)
Experiment Simulation
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3-D scratching simulations
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3-D scratching simulations
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Setup for 3-D scratching simulation of SiC
Parameters Value Unit Geometry
Programmed Depth (feed) 125 nm
Actual depth, doc 103 nm
Length of Cut, loc 10.0 µm
Cutting Speed, v 0.305 mm/s
Friction factor, µ 0.1, 0.26, 0.6 -
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Scratching simulations of SiC
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Results from simulation of SiC
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Summary of results
• Summary of 2-D orthogonal machining simulations– Simulations agree with experiments for depths close to
100 nm and below.– Pressures at the tool-workpiece interface are greater
than the hardness of the material for these depths.– Workpiece deflection leads to actual depth being smaller
than the programmed depth.
• Summary of 3-D scratching simulations– SiC simulations show thrust forces in good agreement
with the experiment.– SiC simulations show cutting forces that are not in very
good agreement with the experiment.
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Conclusions
• Two types of simulations have been presented: 2-D & 3-D
– 2-D orthogonal simulations of SiC produce useful results for depths at or below the DBT depth of the material.
– 2-D simulations create pressures at the tool-workpiece interface that are in agreement with what is expected from the experiments.
– 3-D scratching work shows encouraging results for initial attempts at simulations of ceramic materials for depths below the DBT depth of the materials.
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Recent Related Work
• Validation of material models.• Development of analytical model to predict actual depth of
cut for a programmed depth of cut for each material• Predicting behavior of ceramic materials under the brittle
mode.• 2-D flycutting simulation using VAM.• Current effort: 3-D turning simulations using round nose
cutting tools.
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Acknowledgements
• National Science Foundation for the research grant• Andy Grevstad and Third Wave Systems for software
support.• Jeremiah Couey and Dr Eric Marsh at Penn State University.• Dr Guichelaar for equipment at the Tribology lab.• Lei Dong at University of North Carolina at Charlotte.
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Questions and suggestions
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Results from edge turning simulations, -45º rake, 50º clearance
1.71.45
1.23
2.30
0.91.25
3.65
6.00
0
2
4
6
50 100 300 500
Depth (nm)
Cu
ttin
g F
orc
e (N
)
Experiment
Simulation
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Scratching simulation of Si
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Results from scratching simulation of Si