(1) Advancements in Power Elec
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Transcript of (1) Advancements in Power Elec
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POWER ELECTRONICS
INTRODUCTION TO
POWER ELECTRONICS
Dr M R Abro
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POWER ELECTRONICS
ELECTRONICS
COTROLPOWER
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Power Electronics
Definition:It involves the study of electronic circuits intended to
control the flow of electrical energy. The circuits handle
power flow at levels much higher than the individual
device ratings. (M. H. Rashid, Hand BookP#1)
OR
It is defined as to control & convert electrical power by
the application of converter topologies incorporating the
matrix of switching devices under the guidance of control
electronics.
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History of Power Electronics: It began with the introduction of mercury arc rectifier in
1900
Then metal tank rectifier, grid controlled vacuum tuberectifier, ignitron, phanotron & thyratron were introducedgradually and these devices were applied for power controluntil 1950s
The first electronics revolution began in 1948 with the
invention of silicon transistor at Bell TelephoneLaboratories
PNPN triggering transistor, which was letter called as athyristor or silicon controlled rectifier, was invented by BellTelephone Laboratories in 1956
The second electronics revolution began with thedevelopment of the commercial thyristor by the GeneralElectric Company & thus the new era of Power Electronicsbegan. Since then, many different types of semiconductordevices and conversion techniques have been introduced
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Power Electronics as a Multi Disciplinary Technology
PowerElectronics
PowerSemiconductor
Devices
ConverterCircuits
ControlTheory
MicroComputers
VLSI Circuits
Computer AidedDesign Techniques
SignalProcessing
ElectricalMachines
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Recent Advances in Power Electronics
SemiconductorDevices
ConverterCircuits
Control ofPower
Electronics
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Four generations of Solid-State Power- Electronics
First generation (1958-1975) (Thyristor Era)
Diode
Thyristor
TRIAC
Second Generation (1975-1985)
Power BJT
Power MOSFET
GTO
Microprocessor
ASIC
PIC
Advance Control
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Four generations of Solid-State Power- Electronics
Third generation (1985-1995)
IGBT
SIT
SITH
MCT
IPM (intelligent Power Module)
DSPs
Fourth Generation (1995-)
IGCT
Cool MOS
PEBB (Power Electronics Building Block)
Sensorless Vector Control
Al Techniques: Fuzzy logic, Neural Networks, GeneticAlgorithms.
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Classification of Semiconductor Devices
Semiconductor devices can be classified into three categoriesaccording to their degree of controllability:
Un-controlled turn-on and off devices (e.g. Diodes).
Controlled turn-on and uncontrolled turn-off (e.g. SCR).
Controlled turn-on and off (e.g. BJT, SITH, MOSFET, GTO,
IGBT, SIT,MCT).
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Different Features of
Semiconductor Devices
Devices which requires continuous
signal for keeping them in turn-on
state
BJT, MOSFET, IGBT and SIT
Devices which requires pulse-gatesignal for turning them on & once
these devices are on then gate
pulse is removed
SCR, GTO, SITH and MCT
Devices which posses bidirectional
current capabilityTRIAC and RCT
Devices which posses
unidirectional current capability
Diode, SCR, GTO, BJT, MOSFET,
IGBT, SIT, SITH, MCT
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CLASSIFICATION OF SEMICONDUCTOR DEVICES
Thristors
Line Commutated
ForcedCommutated
TRIAC
GTO IGCT
MCT
LASCR
GATT
RCT ETO
MTO
Schottky
Fast Recovery
General Purpose
Power Semiconductor
Devices
Power Diodes Power Transistors
Power BJTs
Power MOSFET
IGBT
SIT
SITH
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POWER DIODES
GENERAL PURPOSE DIODE:
Voltage/Current Ratings: 10KV/5KA Switching Time (S): 25
On Voltage/Current: 1.6V/10KA
Are generally manufactured by diffusion
High reverse recovery time Use in low speed applications where recovery time is not
critical
FAST RECOVERY DIODE:Voltage/Current Ratings: 3000V/1000A Switching Time (S): 2-5
On Voltage/Current: 3V/3KA
Low recovery time
Use in choppers & inverters where the speed of recovery time is ofcritical importance
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POWER DIODES
SCHOTTKY DIODE:Voltage/Current Ratings: 100V/300A Switching Time (S): 0.23
On Voltage/Current: 0.58V/60A
Have low on state voltage
Very small recovery time (typical of nanoseconds)
The leakage current increases with the voltage ratings &their ratings are limited to 100V
These are ideal for high current & low power voltage dc
chopper supplies
Anode
Semiconductor
Cathode
Metal
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POWER TRANSISTORS
Power BJT:Voltage/Current Rating: 1200V/800A It is a current controlled bi-polar two junction device. Switching speed is considerably faster than that of thyristor-
type devices. Fall into obsolescence due to advent of IGBT.
Power MOSFET:Voltage/Current Rating: 600V/400A It is unipolar & voltage controlled device It is faster of all the devices It can operate in hundreds of KHz switching frequency It is commonly used in high frequency switching mode power
supplies It is not used in high power converters because of large
conduction losses
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POWER TRANSISTORS
IGBT:
Voltage/Current Rating: 3500V/1200A
It is basically a hybrid MOS-gated turn-off bipolartransistor
It combines the attributes of MOSFET,BJT & thyristor
It was commercially introduced in 1983
It is faster than that of BJT
It can operate in medium power upto 20KHz switching
frequency It is finding popularity & has replaced BJT.
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POWER TRANSISTORS
IGBT (Continued):
The invention of IGBT is an important milestone in the history of Power Semiconductor
devices. 6.5KV & 10KV devices are under test in
laboratory.
IGBT Intelligent Power Module (IPM): This device is available for 6000V, 50-300A &
1200V, 50-150A to cover up to 150hp ac driveapplications.
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POWER TRANSISTOR
SIT:
Voltage/Current Rating: 1200V/10ASwitching Time (S): 0.55
It is high power high frequency device
It is solid state version of a triode vacuumtube
It was commercially introduced by TOKIN
Corp in 1987
It is used in AM/FM transmitters, inductionheating, high voltage low current powersupplies
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THYRISTORS
Line or Natural Commutated Thyristors:Voltage/Current Ratings: 8000V/4500A
Switching Time (S): 10 to 20 in a 3000V, 3600A Thyristor
These are turned off due to the sinusoidal nature of input voltage
Forced Commutated Thyristors:These are turned off by an extra circuit called commutation circuitry
TRIAC:Voltage/Current Ratings: 1200V/300A
On Voltage/Current: 1.5V/420A
Its characteristics are similar to two thyristors connected inparallel & having only one gate terminal
The current flow through it can be controlled in either direction These are widely used in all types of simple heat controls, light
controls, motor controls & AC switches
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THYRISTORS
GTO:
Voltage/Current Ratings: 6000V/6000A (Mitsubishi) .
Switching Time (S): 25
On Voltage/Current: 2.5V/1KA
It is self turned off thyristor. It does not require any commutation circuit.
It is used for commutation converters.
RCT:
Voltage/Current Ratings: 2500V/1000A Switching Time (S)
On Voltage/Current: 2.1V/1KA
It is connected as a thyristor with an inverse parallel diode
These are used for high speed switching (traction applications)
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Thyristors
SITH:Voltage/Current Ratings: 4000V/2200A Switching Time (S): 6.5
On Voltage/Current: 2.3V/400A
It is self controlled GTO like device
It was commercially introduced by TOYO Co. in 1988 These are applied for medium power converters with
frequency of several hundreds of kilo hertz beyond thefrequency of GTO
GATT:Voltage/Current Ratings: 1200V/400A Switching Time (S): 8
On Voltage/Current: 2.8V/1.25KA
These are used for high speed switching, specially intraction applications
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Thyristors
LASCR:Voltage/Current Ratings: 600V/1500A Switching Time (S): 200-400On Voltage/Current: 2.4V/4.5A
These are suitable for high voltage system applications, specially inHVDC systems
The four layer PNPN construction is similar to that of ordinary SCR withone exception- the PN junctions are formed on a silicon pellet in anelongated manner to permit radiations by a light source
MCT:Voltage/Current Ratings: 4500V/250A, 900V/15A, 1000V/30A, 600V/60A
It is a thyristor like trigger into conduction device that can be turned onor off by a short pulse on the MOS gate
This was introduced by General Electrical Company in November 1988 It is like a GTO, except that the turn-off gain is very high
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Thyristor
IGCT:
Available with 6000V, 6000A (10KV devices are under test)
It integrates a gate-commutated thyristor (GCT) with a
multilayered printed circuit board gate drive The GCT is a hard-switched GTO with a very fast & large gate
current pulse, as large as the full rated current, that draws out allthe current from cathode into the gate in about 1S to ensure afast turn-off
Similar to GTO, the IGCT is turned on by applying the turn-on
current to its gate The IGCT is turned off by a multilayered gate driver circuit board
that can supply a fast rising turn-off pulse (i.e., a gate current of4KA/S with a gate cathode voltage of 20V only)
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Thyristor
Reverse Blocking IGCT :Available with 6000V, 800A is introduced very recentlyby ABB for use in IFI drives.
ETO: It is a MOS-GTO hybrid device that combines the
advantages of both the GTO & MOSFET ETOs with current rating of up to 4KA & voltage rating
of up to 6KV have been demonstrated It is suitable for high power and high frequency
applications
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Thyristor
MTO:
It is a combination of a GTO & a MOSFET, which together
overcome the limitations of the GTO turn-off ability
Its structure is similar to that of a GTO and retains theadvantages of high voltage (up to 10KV) & high current (up to4000A)
Can be used in high power application ranging from 1 to 20MVA
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MONOLITHIC INTEGRATION OF POWER, CONTROL ANDPROTECTION ELEMENTS SMART POWER
ADVANTAGES OF COST, SIZE, EMI PROBLEM ANDRELIABILITY
ISOLATION PROBLEM OF LOW AND HIGH VOLTAGE
DEVICES
THERMAL MANAGEMENT PROBLEM
EXAMPLE COMMERCIAL PICs:
STEPPER MOTOR DRIVEBRUSHLESS DC MOTOR (BLDM) DRIVEH-BRIDGE INVERTERCHOPPER FOR DC MOTOR DRIVEGATE DRIVER FOR IGBT
DC-DC CONVERTER
POWER INTEGRATED CIRCUIT(PIC) FEATURES
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Power Integrated Circuit for DCMotor Drive
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Relative properties of Controllable Switches
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SWITCHING FREQUENCY (Hz)
DEVICE
V-IRATING
S
PRODUCT(VI)
10 !02 103 104 105 10610
102
103
104
105
106
107
108
TRIAC
THYRISTOR
IGBTDISCRETE
IGCT
GTO
IGBT IPM
POWERMOSFET
Power FrequencyTrends of the Devices
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Types of Power Electronic Circuits:
For the control of electric power the conversionof electric power from one form to another isnecessary and the switching characteristics ofthe power devices permits these conversions.The static power converters performs thesesfunctions of power conversions. A converter
may be considered as a switching matrix. Thepower electronics circuits can be classified intothe following types:
Diode rectifiers
AC-DC converters (controlled rectifiers)
AC-AC converters (AC voltage controllers)
DC-DC converters (DC choppers)
DC-AC converters (inverters)
Static switches
F b i t f t d di th
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Four basic types of converters depending upon thefunction performed
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Control of Power Electronics
Neural Networks
Expert & Fuzzy
Control
MicrocomputerControl
VLSI Control
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SOME SIMULATION PROGRAMS
MATLAB/SIMULINK PSPICE PSIM EMTP MATRIXX SIMNON SABER C
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Digital Controller ClassificationIn a VLSI, a very large number of devices areintegrated monolithically in a chip to providegreat simplification of hardware. A VLSI chipmay use digital, analog, or mixed signals.
The instruction set is complex,which results in a complexarchitecture & a sluggishcomputation.
Reduced instructionset computers: Simplearchitecture allows forhigh speeds
Speciallydesignedfor highspeedparallelprocessin
g usingseveralprocessors
A custom chip (notprogrammable) is very
economical & is designed forspecific applications. An ASIC
chip can be designed withdigital, analog, memory
elements (ROM, RAM), & RISCor DSP to satisfy full control
function.
Interconnected functionalcircuits such as (D flip-flop,counters, etc) to providemore efficient performance& effective chip estate
utilization than gate arrays.
The gate arrayconsists of a matrix of
simple logic gates thatare interconnected bythe user in a fieldprogrammable GA
(FPGA) orprogrammable logicdevice (PLD), whichcan be programmed
electrically (ELPD) orby mask (CPLD)
similar to EPROM or
PROM, respectively.
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Applications DC AND AC REGULATED POWER SUPPLIES
MOTOR DRIVES
INDUCTION HEATING
SOLID STATE CIRCUIT BREAKER
VARIABLE SPEED CONSTANT FREQUENCY SYSTEM
PHOTOVOLTAIC AND FUEL CELL CONVERSION
HIGH VOLTAGE DC SYSTEM
POWER LINE VAR AND HARMONIC COMPENSATION
ELECTRONIC WELDING
HEATING AND LIGHTING CONTROL
ELECTRO CHEMICAL PROCESSES
POWERELECTRONIC
SYSTEMS
Flexible AC Transmission System, FACTS
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Applications
A 3-phase controlled bridge circuit used as a basic topologyfor many converter systems
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Applications
A high voltage DC (HVDC) transmission system
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Applications
Parallel connection of two 6-pulse converters
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Applications
Variable frequency converter for motor control
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Pulse width modulated or square wave inverter with a controlledrectifier input
Applications
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Applications
Current-source inverter on the output section of motor drive systemusing capacitors for power factor correction
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Applications
Per phase thyristor-controlled inductor (TCI) &thyristor-switched capacitor (TSC) system
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Applications
Static transfer switch used in a UPS system
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POWER ELECTRONICS IN ENERGY SAVING
CONTROL OF POWER BY ELECTRONIC SWITCHING IS MOREEFFICIENT THAN OLD RHEOSTATIC CONTROL
ROUGHLY 60% - 65% OF GENERATED ENERGY IS CONSUMED INELECTRICAL MACHINESMAINLY PUMPS AND FANS
VARIABLE SPEED operation of the motor with the help ofPower Electonics is highly efficient.
20% OF GENERATED ENERGY IS USED IN LIGHTING HIGH FREQUENCY FLUORESCENT LAMPS ARE 2-3 TIMES MORE
EFFICIENT THAN INCANDESCENT LAMPS
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HOW TO SOLVE OR MITIGATE ENVIRONMENTAL PROBLEMS
WITH THE RELEVANCE OF POWER ELECTRONICS?
PROMOTE ALL ENERGY USAGE IN ELECTRICAL FORM CENTRALIZE FOSSIL FUEL POWER GENERATION AND APPLY
ADVANCED EMISSION STANDARDS
LARGE USAGE OF RENEWABLE ENERGY SOURCES- HYDRO, WINDAND PHOTOVOLTAIC
CONSERVATION OF ENERGY BY EFFICIENT USE OF ELECTRICITY PREVENT ENERGY WASTE
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ADVANCES AND TRENDS OF POWER SEMICONDUCTOR DEVICES
MODERN POWER ELECTRONICS EVOLUTION PRIMARILY FOLLOWED THEPOWER DEVICE EVOLUTION - WHICH AGAIN FOLLOWED THEMICROELECTRONICS EVOLUTION
GRADUAL OBSOLESCENCE OF PHASE CONTROL DEVICES (THYRISTOR,TRIAC)
DOMINANCE OF INSULATED GATE CONTROLLED DEVICES (IGBT, PowerMOSFET)
POWER MOSFET WILL REMAIN UNIVERSAL IN LOW VOLTAGE HIGHFREQUENCY APPLICATIONS
GRADUAL OBSOLESCENCE OF GTOs (LOWER END BY IGBTs AND HIGHEREND BY IGCTs)
REDUCTION OF CONDUCTION DROP IN HIGH VOLTAGE POWERMOSFETAND IGBT
SiC BASED DEVICES WILL BRING RENAISSANCE IN HIGH POWERELECTRONICSDIAMOND DEVICES IN THE LONG RUN
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NEXT GENERATION POWER SEMICONDUCTOR MATERIALS
SILICON CARBIDEDIAMOND
LARGE BAND GAP HIGH CARRIER MOBILITY HIGH ELECTRICAL CONDUCTIVITY HIGH THERMAL CONDUCTIVITY
RESULT
HIGH POWER CAPABILITY HIGH FREQUENCY LOW CONDUCTION DROP HIGH JUNCTION TEMPERATURE GOOD RADIATION HARDNESS
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THANKS