03.BJT-Basics.pdf

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    Bipolar Junction Transistors - I

    (BJT-I)

    BASICS

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    A bipolar junction transistor (BJT) is a three terminal

    device constructed of doped semiconductor material

    BJT is used in amplifying or switching applications, in

    discrete circuits and in IC design, both in analog anddigital domain

    Bipolar Junction Transistors are so named because

    their operation involves both electrons and holeswhich are negative and positive charge carriers

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    Emitter

    region

    Base

    region

    Collector

    region

    P N P

    Emitter

    (E)

    Base

    (B)

    Collector

    (C)

    J1 J2

    Emitter-Base

    Junction

    Collector-Base

    Junction

    Physical Structure of PNP Transistor

    Symbol

    B

    E

    CArrow indicates the direction

    in which the current flows in

    the emitter

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    Emitter

    region

    Base

    region

    Collector

    region

    N P N

    Emitter

    (E)

    Base

    (B)

    Collector

    (C)

    J1 J2

    Emitter-Base

    Junction

    Collector-Base

    Junction

    Physical Structure of NPN Transistor

    Symbol

    B

    E

    CArrow indicates the direction

    in which the current flows in

    the emitter

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    P N P

    E

    B

    C

    Operation of a PNP Transistor in the Active mode

    VEBVCB

    + - + -

    IE

    IB

    IC

    ICO

    Forward Biased Reverse Biased

    is the fraction of the total emitter

    current which goes from the emitter,

    across the base, to the collector

    IE= IB+ IC

    IC = IE+ ICO

    IE

    B

    E

    C

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    N P N

    E

    B

    C

    Operation of an NPN Transistor in the Active mode

    VEB VCB

    +- +-

    --

    ++

    IE

    Injected

    electrons

    Injected holes

    Diffusing

    electrons

    Recombinedelectrons

    Collected

    electrons

    IB

    IC{IEIC0

    Forward Biased Reverse Biased

    ++

    +Drift Current

    IB

    IE

    IC = IE+ ICO

    IE= IB+ IC

    BE

    C

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    C E CO E B C

    C B C CO

    C B CO

    C B CO

    I =I +I I =I +I

    I =(I +I )+I

    (1-)I =I +I

    1I = I + I

    1- 1-

    ( ) COBC

    I1II ++=

    Define =

    1-

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    Different Transistor configurations

    A Transistor may be operated in three different

    configurations :

    Common Base (CB)

    Common Emitter (CE)

    Common Collector (CC)

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    Common Base (CB) Transistor Configuration

    P N PE

    B

    C

    VEE VCC

    + - + -

    IE

    IB

    IC

    IEE C

    B

    IC

    IB

    PNP

    N P NE

    B

    C

    VEE VCC

    +- +-

    IE

    IB

    IC

    IEE C

    B

    IC

    IB

    NPN

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    Common Collector (CC) Transistor Configuration

    PNP

    E

    B

    C

    IB

    IE

    IC

    P

    N

    P

    B

    C

    E

    +

    - -

    +

    VBB

    VEE

    IB

    IE

    IC

    N

    P

    N

    B

    C

    E

    +

    -

    -

    +VBB

    VEE

    IB

    IE

    IC

    E

    B

    C

    IB

    IE

    IC

    NPN

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    TheCommon Emitter (CE)configuration

    is the most common configuration for

    using a transistor.

    We will discuss this in more detail in our

    subsequent slides concentrating mainly

    on the way in which this can be used asan amplifier.

    To keep things simple, we will mainly

    look at circuits using an NPN transistor

    but the usage of a PNP transistor will bevery similar (just use voltage supplies of

    opposite polarity!).

    E

    B

    CIB

    IE

    IC

    E

    B

    CIB

    IE

    IC

    NPN

    PNP