0324AT Hyu Pcg-Copy

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CST Advanced Training 2004 CST Advanced Training 2004 @ @ Daedeok Daedeok Convention Town (2004.03.24) Convention Town (2004.03.24) CST CST EM EM Studio Studio TM TM : : Examples Examples Chang-Kyun PARK (Ph. D. St.) Thin Films & Devices (TFD) Lab. Thin Films & Devices (TFD) Lab. Dept. of Electrical Engineering, Dept. of Electrical Engineering, Hanyang University @ Hanyang University @ Ansan Ansan Campus, KOREA Campus, KOREA E-mail: [email protected]

Transcript of 0324AT Hyu Pcg-Copy

  • CST Advanced Training 2004CST Advanced Training 2004@ @ DaedeokDaedeok Convention Town (2004.03.24)Convention Town (2004.03.24)

    CSTCST EM EM StudioStudioTMTM:: ExamplesExamples

    Chang-Kyun PARK (Ph. D. St.)

    Thin Films & Devices (TFD) Lab.Thin Films & Devices (TFD) Lab.Dept. of Electrical Engineering,Dept. of Electrical Engineering,

    Hanyang University @ Hanyang University @ AnsanAnsan Campus, KOREACampus, KOREA

    E-mail: [email protected]

  • OOUTLINEUTLINE

    Introduction

    Example

    E-staticElectrometer

    CST EM CST EM StudioStudioTMTM v.2.0v.2.0

    M-staticRotary Encoder

    J-staticCircuit Breaker

    TrackingElectron gun

    RJ 45 LAN connectorVariable capacitor

    Floating PotentialField EmitterTapered-type gated FEA

    LFEddy current sensor

  • TFD Lab.TFD Lab.Hanyang UniversityHanyang UniversityProfessor: JinProfessor: Jin--SeokSeok ParkPark

  • TFD Lab. TFD Lab. TFD Lab.

    Thin films and devices lab. for electronic displays and communications

    http://tfd.hanyang.ac.kr

  • CST CST EM StudioEM Studio

  • MAFIAMAFIA

    CST MAFIA

    MAFIA (Maxwells Equations by the Finite Integration Algorithm)MAFIA is an interactive program package for the computation of electromagnetic fields. It is based directly on the fundamental equations of electromagnetic fields, Maxwells equations.

    MAFIA is a modular program, it is divided in preprocessor, postprocessor and solvers for different special cases of Maxwells equationsMAFIA includes an optimizer, it runs

    interactively as well as in batch or semi interactive using predefined command sequences. It has a powerful command language for automation and optimizing purposes and an advanced interactive graphical output with thousands of display options

  • MAFIA ModuleMAFIA Module

    MAFIA Module

    CST MAFIA

  • MAFIAMAFIA

    The Following modules are available (I)

    CST MAFIA

    M : Preprocessor, includes solid modeler, CAD import, 3D graphics P : Postprocessor, includes 3D graphics and calculation of deduced quantities like far field and impedanceS : Static field module, solves electrostatics, magnetostatics, heat flow problems, stationary current flow problems and electro-quasistaticproblemsT3 : Time domain module, simulates time dependent wave propagation, most general and versatile in application. Uses Cartesian coordinates TS3 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields. Uses Cartesian coordinates only TS2 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields in cylinder symmetrical structures

  • MAFIAMAFIA

    The Following modules are available (II)

    CST MAFIA

    E : Frequency domain eigenmode module, finds modes in resonators and waveguidesW3 : Frequency domain module, covers the whole frequency rangeH3 : Thermodynamic module, solving thermodynamic problems in time domain in either Cartesian or polar coordinate systemT2 : Time domain module, simulates time dependent wave propagation within cylinder symmetrical structures. Not yet available under GUIOO : Optimizer with many built in strategies. Optimizing capabilities not yet completely available under GUIA3 : Time domain acoustic solver. Not yet available under GUI

  • The Simulation MethodThe Simulation MethodBackground of the Simulation Method

    CST EM Studio

    CST EM STUDIO is a general-purpose electromagnetic simulator based on the Finite Integration Technique (FIT), first purposed by Weiland in 1976/1977.

    Finite Integration + PBA(Statics to THz)

    Maxwell Grid Equations

    E-static

    0=t

    ita

    0

    t

    M-static

    J-static

    Tracking

    Frequency Domain (j>0)

    Eigenvalue Problem (j=0)

    Implicit

    ExplicitTime

    Domain

    PICMAFIA

    EMS MWS

  • CSTCST EM StudioEM StudioExample: EExample: E--staticstatic

  • SS--static 1: Electrometer static 1: Electrometer Introduction

    CST EM Studio

    PEC

    This Example deals with the simulation of a simple electrometer device, which can be used for voltage measurements. The model used for the electrometer consists of three parts: the electrometers scale, the ground, and the pointer.Results of interest: the capacitance and the torque for different angles of the pointer

    The main dimensions of the electrometer device (unit: cm)

    Pointer(PEC, 1,000V)

    Scale(Dielectric, =10)

    Ground(PEC, 0V)

  • SS--static 1: Electrometer static 1: Electrometer

    Summary

    CST EM StudioMeshcells: 294,528

    48min, 10secTotal solver time

    AngleFrom 20 to 70 (11steps)

    Parameter sweep

    294,528Meshcells

    ElectrostaticSolver

    Mesh generation

  • SS--static 1: Electrometer static 1: Electrometer

    Potential

    CST EM Studio

    E-Field

  • SS--static 1: Electrometer static 1: Electrometer

    CST EM Studio

    Torque vs angle

  • SS--static 2: RJ 45 Connector static 2: RJ 45 Connector Introduction

    CST EM Studio

    This example shows the calculation of the capacitance matrix of a RJ45 connection. The model consists of the connector and the corresponding socket, each containing eight wires for the signal transmission. The wires of the socket are fixed to a substrate plate, every other of them additionally connected to a metallic ground plane. This provides some kind of shielding effect for the transmission of the wire signals.

    Results of interest: capacitance Matrix

  • SS--static 2: RJ 45 Connector static 2: RJ 45 Connector Define Potential

    CST EM Studio

    Potential 1(PCB PEC, 0V)

    Potential 2(PCB PEC, 1V)

    Potential 3(PCB PEC, 1V)

    Potential 4(PCB PEC, 1V) Potential 5

    (PCB PEC, 1V)

  • SS--static 2: RJ 45 Connector static 2: RJ 45 Connector

    Potential

    CST EM Studio

    E-Field

  • SS--static 2: RJ 45 Connector static 2: RJ 45 Connector

    Capacitance Matrix

    CST EM Studio

  • SS--static 3: Variable Capacitor static 3: Variable Capacitor Introduction

    CST EM Studio

    The variable capacitor example demonstrates the parameter sweep feature in combination with the capacitance calculation.

    Plate(PCB PEC, 0V)

    Plate(PCB PEC, 1V)

    Epsilon(Dielectric, =100)

    Parameter Sweep

  • Capacitance Vs Alpha

    CST EM Studio

    SS--static 3: Variable Capacitor static 3: Variable Capacitor

  • SS--static 4: Floating Potential static 4: Floating Potential Introduction

    CST EM Studio

    This examples demonstrates how to consider floating potentials in an electrostatic calculation. It consists of four metallic plates and two plates of high dielectric material (relative permittivity 10000). On the two larger metallic plates a potential is defined, the other two metallic plates carry a charge of 0C.

    Plate(PCB PEC, -1V)

    Plate(PCB PEC, 1V)

    PECFloating Potential

    High dielectric material (relative permittivity 10000) Applied charge value: 0C

  • Result: Electric Field Distributions

    CST EM Studio

    1V

    -1V

    0.469V

    -0.469V

    0.467V

    -0.467V

    SS--static 4: Floating Potential static 4: Floating Potential

  • Result: Electric Field Distributions

    CST EM Studio

    SS--static 4: Floating Potential static 4: Floating Potential

  • Only PEC Conditions

    CST EM Studio

    SS--static 4: Floating Potential static 4: Floating Potential

  • Result: Potential Distributions

    CST EM Studio

    1V

    -1V

    0.469V0V

    0V-0.469V

    SS--static 4: Floating Potential static 4: Floating Potential

  • Result: Electric Field Distributions

    CST EM Studio

    SS--static 4: Floating Potential static 4: Floating Potential

  • X-cut Plane

    Cathode (0V)

    Isolated Electrode Ballast layer, a-Si

    Insulator, SiO2

    Gate (30V)

    CNT

    Anode (50V)

    10m

    SS--static 5: Field emitter static 5: Field emitter

  • Material Property Unit: m

    CNT(PEC)

    Diameter: 0.040Height: 1Tip radius: 0.020

    Base: a-Si

    Height: 2

    Diameter: 0.040

    SS--static 5: Field emitter static 5: Field emitter

  • PotentialUnit: m

    Cathode(0V)

    Gate(30V)

    Anode(50V)

    SS--static 5: Field emitter static 5: Field emitter

  • Floating Potential Unit: m

    Isolated Electrode

    CNT

    SS--static 5: Field emitter static 5: Field emitter

  • Results: Potential Distribution

    Isolated Electrode: 26V

    Tip Region: 27V

    SS--static 5: Field emitter static 5: Field emitter

  • Results: Electric Field Distribution

    SS--static 5: Field emitter static 5: Field emitter

  • Results: 1D Plot

    SS--static 5: Field emitter static 5: Field emitter

  • Geometry

    Cathode (0V) Inter-dielectric Ballast layer, a-Si

    Insulator, SiO2

    Gate (50V) Parameter Sweep

    CNT-Floating Potential (0C)

    Monitoring Point

    SS--static 6: Taperedstatic 6: Tapered--type Gatedtype Gated--FEA FEA

  • 45o

    68o

    90o

    Parameter Sweep (Pierce Electrode angle: 90o~12.5o)Result: Potential Distributions

    SS--static 6: Taperedstatic 6: Tapered--type Gatedtype Gated--FEA FEA

  • Parameter Sweep (Pierce Electrode angle: 90o~12.5o)

    45o

    68o

    90o

    Result: Electric Field Distributions

    SS--static 6: Taperedstatic 6: Tapered--type Gatedtype Gated--FEA FEA

  • ICP Reactor

    SS--static 7: ICPstatic 7: ICP--Reactor Reactor

  • Simulation of ICP Reactor under DC Bias Conditions

    System summary

    OS: MS Windows XP V.5.1 SP1 Model: Intel Zeon (SE7505VB2) 2 CPU Process: Genuine Intel ~2790Mhz Memory: 1,024.00MB Graphic Adapter: Quadro4 980XGLSimulation summary

    Tool: CST EM Studio TM v 1.3 (CST GmbH) Simulation field: Electrostatic Solver Number of nodes: 1,074,480 Mesh generation time: 130 s Solver time: 13 s

    Modeling of ICP Reactor

    SS--static 7: ICPstatic 7: ICP--Reactor Reactor

    Simulation

  • Conditions Simulation Results Under 300 V Conditions

    Potential distribution

    SS--static 7: ICPstatic 7: ICP--Reactor Reactor

    Electric Field distribution

  • Conditions Simulation Results Under -450 V Conditions

    Potential distribution

    SS--static 7: ICPstatic 7: ICP--Reactor Reactor

    Electric Field distribution

  • CSTCST EM StudioEM StudioExample: MExample: M--staticstatic

  • MM--static 1: Rotary Encoderstatic 1: Rotary EncoderIntroduction

    CST EM Studio

    In this tutorial a rotary encoder consisting of two iron yokes, a permanent magnet and two hall sensors is analyzed.

    Both yokes form a magnetic circuit, which is driven by a cylindrical permanent magnet. Two hall sensors are placed in the air gap between the yokes to measure the flux density in the gap. By twisting the yokes the B-field changes linear with the rotation angle.

    Upper Yoke(Iron 1000)

    Bottom Yoke(Iron 1000)

    Magnet

    Hall Sensor

    0.2 T|z

  • MM--static 1: Rotary Encoderstatic 1: Rotary Encoder

    B-Field

    CST EM Studio

  • MM--static 1: Rotary Encoderstatic 1: Rotary Encoder

    Parameter Sweep

    CST EM Studio

    Field Watch Position

  • CSTCST EM StudioEM StudioExample: LF (Low Example: LF (Low Frequency) SolverFrequency) Solver

  • LF: Eddy Current SensorLF: Eddy Current SensorIntroduction

    CST EM Studio

    In this example and eddy current sensor is modeled to simulate non-destructive material test. You will analyze an eddy current sensor driven by a low frequency coil generating eddy currents in an aluminum probe plate.

    The structure depicted above consists of the sensor, represented by an excitation current coil embedded in iron material. Below this sensor the probe plate is given as a lossy aluminum material, allowing the flow of eddy current. Inside this plate a material defect is modeled as a gap, which should be detected by the changing voltage at the coil.

  • LF: Eddy Current SensorLF: Eddy Current Sensor

    CST EM Studio

    B-Field (0o) Eddy Current (90o)

  • CSTCST EM StudioEM StudioExample: Stationary Example: Stationary Currents SolverCurrents Solver

  • SC: Circuit BreakerSC: Circuit BreakerIntroduction

    CST EM Studio

    In this example, you will analyze a circuit breaker consisting of two contact springs connected by a bridge.

    One matter of concern is the current flow from one contact over the bridge to the other contact. Therefore two current port are defined for the stationary current solver. After the solver run the fields are visualized and then used as a source field for a subsequent carried out magnetostatic calculation.

    Cupper(J-port, -0.05V)

    Cupper(J-port, 0.05V)

    Contact pad(PEC)

    Bridge(PEC)

  • SC: Circuit BreakerSC: Circuit Breaker

    CST EM Studio

    Current Density

    Loss Power (P): 6.856485e+001 [W]R = V2/P=0.1*0.1/P = 1.458473e-4I = P/V = V/R = 685.65 [A]

  • SC: Circuit BreakerSC: Circuit Breaker

    CST EM Studio

    H-Field

  • CSTCST EM StudioEM StudioExample: Tracking Example: Tracking SolverSolver

  • Tracking 1: Electron GunTracking 1: Electron GunIntroduction

    CST EM Studio

    This example demonstrated how a particle tracking can be performed. Two types of field results were used here, an electrostaic field is used to accelerate electrons being emitted from a cathode and a magnetostatic field which is caused by a helmholz coil in order to focus the electron beam.

    Anode(PEC, 1000V)

    Cathode(PEC, 0V)

    Focus coil(0.4A)

  • Tracking 1: Electron GunTracking 1: Electron Gun

    Particle Source

    CST EM Studio

    Emission Site(electron)

    Particle Tracking