The NVRAM Standard, Bringing Coherence to the Crazy World ...
001-90292Owner: RHOE Rev **Tech lead: EWOO NVRAM Product Overview New Product Presentation NVRAM...
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Transcript of 001-90292Owner: RHOE Rev **Tech lead: EWOO NVRAM Product Overview New Product Presentation NVRAM...
001-90292 Owner: RHOERev ** Tech lead: EWOO
NVRAM Product Overview New Product Presentation
NVRAM ProductOverview
Cypress Provides the Industry’s Fastest andMost Energy-Efficient Nonvolatile RAM Solutions
001-90292 Owner: RHOERev ** Tech lead: EWOO
Cypress Is the NVRAM Market Leader
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Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory productsF-RAM™, the industry’s most energy-efficient serial NVRAMs
nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM productsF-RAM consumes 30% of the power of the most advanced EEPROM and offers 100,000,000 times the endurance
Densities range from 4Kb to 2Mb, and voltages range from 2.0 V to 5.5 V
SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages
Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM productsAccess times range from 20 ns to 45 ns with unlimited read/write cycle endurance
Densities range from 64Kb to 16Mb with 3.0 V and 5.0 V supply voltages and 1.8 V I/O voltages
Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options
Integrated real-time clocks are also available on nvSRAM products
Cypress:Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience
Continues to invest heavily in new products
Is committed to providing products that meet the most rigorous automotive and military standards
Assures long-term supply of F-RAM and nvSRAM products
Has shipped more than 1 billion NVRAM units
Cypress offers the industry’s fastest, most-energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data
NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Serial Nonvolatile Memory Terms
Nonvolatile Memory (NVM)Memory that retains its information on power loss
Nonvolatile Random Access Memory (NVRAM)A Nonvolatile Memory that allows direct access to stored data in any random order
Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy Nonvolatile Memory that uses ferroelectric technology to store data
Electrically Erasable Programmable Read-Only Memory (EEPROM)A common Nonvolatile Memory that uses floating-gate technology to store data
Page WriteA write to a fixed-length contiguous block of memory
Soak TimeThe 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers
Write EnduranceThe number of times a Nonvolatile Memory cell can be rewritten before it wears out
Wear LevelingA method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software
algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached
AEC-Q100A quality and reliability standard for automotive applications defined by the Automotive Electronics Council
3NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Serial NVM Design Problems1. Many electronic devices must reliably store system data in Nonvolatile Memory after power lossEEPROMs require a 5-ms continuation of active power per Page Write for Soak Time
Soak Time requires additional capacitors or batteries for a Page Write on power loss, which adds cost and reduces reliability
Mission-critical data may be subject to radiation and/or magnetic fields
2. Many data-logging applications exceed the 1 million write-cycle limitation of EEPROMWear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan
Wear Leveling requires up to 8x the memory capacity and additional software, which increases cost
3. Systems using EEPROM have increased system power consumptionFor the 5 ms required for EEPROM Soak Time
For the processing required to do Wear Leveling
F-RAM solves these problemsRequires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss
Provides 100 trillion write cycles, eliminating the need for Wear Leveling
Consumes 2x to 5x less active power than EEPROM, thereby reducing system power
F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields
Cypress F-RAM offers 100,000,000 times the endurance of EEPROM at 30% of the power
4NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Serial F-RAM Is a Better Solution
Additional capacitor to maintain powerfor 5 ms per Page Write for Soak Time
Simplify a conventional, complex,
EEPROM-based design…
F-RAM pin-to-pin replacement for EEPROM SOIC8
By choosing F-RAM as your serial Nonvolatile Memory solution…
To produce better solutions for multiple applications at a lower cost, especially
for mission-critical applications.
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Automotive Electronics
Industrial Controls
Smart Meters
Multifunction Printers
Medical Devices
File System
Memory
Controller
Worn Cell
8x EEPROM capacity for Wear Leveling
2 x 256Kb for a 64Kb System
Wear Leveling software algorithm to increase EEPROM Write Endurance
NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Feature F-RAM F-RAM EEPROM NOR Flash
SPI Speed 40 MHz 33 MHz 20 MHz 50 MHz
I2C Speed 3.4 MHz 1 MHz 1 MHz N/A
Write Delay 0 ms 0 ms 5 ms 50 ms
Endurance(Cycles)
1014 1012 106 105
Active WriteCurrent1
3 mA 6 mA 10 mA 15 mA
Density Range 4Kb - 2Mb 4Kb - 2Mb 1Kb - 1Mb 4Mb - 512Mb
NonvolatileRetention
100 years 10 years 100 years 20 years
1 Conditions: Max current, SPI, 10 MHz to 40 MHz, 2.7 to 3.3 V, −40° C to +85° C
Cypress Serial NVRAM vs. Competition’s
6NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Here’s How to Get Started1. Select Cypress serial F-RAM products in the F-RAM Product Selector Table
and click “Order” for free samples
2. Download the SPI Guide for F-RAM
3. Register to access online technical support: www.cypress.com
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Digital Hearing Aidsby Oticon
Infotainment System by Hyundai
Smart E-Meter by Landis + Gyr
Motor Control by SEW
Multifunction Printer by Ricoh
Automotive Safety System by Hyundai
NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Parallel Nonvolatile Memory Terms
Nonvolatile Memory (NVM)Memory that retains data on power loss
Nonvolatile Random Access Memory (NVRAM)A Nonvolatile Memory that allows direct access to stored data in any random order
Write EnduranceThe number of times a Nonvolatile Memory cell can be rewritten before it wears out
Silicon Oxide Nitride Oxide Silicon (SONOS) An insulating charge-storage layer in a transistor used to create a Nonvolatile Memory storage cell
Nonvolatile Static Random Access Memory (nvSRAM)Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss
Battery-Backed SRAM (BBSRAM)SRAM memory connected to a lithium battery to retain data on power loss
Restriction of Hazardous Substances (RoHS)A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components
Redundant Array of Independent Disks (RAID)A storage technology that uses two or more disk drives for redundancy or increased performance
8NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
1. Many systems require fast Nonvolatile Memories with high Write EnduranceTraditional EEPROM or Flash Nonvolatile Memories have slow write times (> 1 ms) and limited Write Endurance
Low-power asynchronous SRAMs have ~45 ns access times but require battery backup to store data on power loss
2. Batteries increase cost, add design complexity, and compromise reliability and RoHS complianceBatteries, power-management circuits and firmware add cost and complexity, and reduce reliability
Coin cell batteries have a limited lifetime, which mandates periodic system maintenance and downtime
Data is lost if battery charge is drained before the system power is restored, which mandates fast time-to-repair
Batteries contain heavy metals and violate RoHS compliance
nvSRAM solves these problemsProvides 20 ns read/write SRAM access time with unlimited endurance
Requires no batteries to retain data on power loss for unlimited periods
Stores data reliably at power loss without the need for external power-management circuits and firmware
Complies with RoHS requirements
Parallel NVM Design Problems
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Cypress RoHS-compliant nvSRAMs are significantly faster than traditional Nonvolatile Memories, and more reliable and easier to implement than BBSRAM solutions
NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Parallel nvSRAM Is a Better Solution
Battery-free parallel nvSRAM solution
By choosing nvSRAM as your parallel Nonvolatile Memory solution…
To produce more reliable solutions for mission-critical applications at
a lower cost.
Battery required to retain data on power loss
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Extra board area for battery
Standard SRAM memory
Simplify a complex BBSRAM-based design…
RAID Storage
Industrial Automation
Computing and Networking
Avionics and Defense
Electronic Gaming
NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
1 Low-power 16Mb asynchronous SRAM2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 35 ns (MRAM), 2.7 to 3.6 V, −40° C to +85° C
Feature nvSRAMAsynchronousSRAM1 + Battery
MRAM
Access Time 20 ns 45 ns 35 ns
Write Delay 0 ms 0 ms 0 ms
Battery Requirement No Yes No
Endurance (Cycles) Unlimited Unlimited Unlimited
Active Write Current2 75 mA 50 mA 180 mA
Density Range 256Kb - 16Mb 64Kb - 64Mb 256Kb - 16Mb
RoHS Compliant Yes No Yes
Nonvolatile Retention 20 years N/A 20 years
Magnetic Damage Risk No No Yes
CY Parallel NVRAM vs. Competition’s
11NVRAM Product Overview New Product Presentation
001-90292 Owner: RHOERev ** Tech lead: EWOO
Here’s How to Get Started1. Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table
and click “Order” for free samples
2. Download the App Note: A Comparison Between nvSRAMs and BBSRAMs
3. Register to access online technical support: Cypress.com
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Programmable Logic Controller by Siemens
Slot Machineby IGT
Routerby Cisco
Avionics Subsystemby Rockwell Collins
RAID Card by LSI
NVRAM Product Overview New Product Presentation