Post on 07-Sep-2018
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FORM
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014
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. 06
Standard IGBT Modules
600V, 1200V, 1700V
Norbert SchäferProduct Management
+49 911 6559 317norbert.schaefer@semikron.com
SEMITRANS® Standard IGBT Modules
www.semikron.com
FORM
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SEMITRANS
Agenda
1. Overview
2. Basics
3. Chiptechnologies
3.1 IGBT-Chips
3.2 CAL-Diode-Chips
4. Advantages
5. Market Information
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FORM
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SEMITRANS
Agenda
1. Overview
2. Basics
3. Chiptechnologies
3.1 IGBT-Chips
3.2 CAL-Diode-Chips
4. Advantages
5. Market Information
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SEMITRANS positioning in product range
SEMITRANS
SEMiX®
SEMISTACK®
SEMIPACK®
MiniSKiiP®
SEMIPONT®
SEMITRANS®
SKiiP®
SEMITOP®
SKiM®
Discretes
[V]
[A] 1 5 50 60 100 200 400 900 1200 5000
600-3300
1200-1700
600-1700
600-1700
600-1700
50-2200
600-1200
100-1800
50-3600
100-1200
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SEMITRANS 2(width 34 mm)
GB GAL GAR
Product Range: Standard housing sizes
SEMITRANS
Customer most wanted housing sizesStandard case types (world wide standard)These housing sizes are offered by several competitors
SEMITRANS 3(width 62 mm)
GB GAL GAR GM
SEMITRANS 4(width 62 mm)
GA
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SEMITRANS 2 NI (low inductive design) SEMITRANS 9 (high isolation voltage)
SEMITRANS 6 /7(solder and faston terminals) SEMITRANS 5 (Multitrans / Shuntmodule)
SEMITRANS
Non standard dimensions
Customer specific solutions andcatalogue types
Product Range - Non standard housing sizes
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Product Range (standard housing sizes)
SEMITRANS
ICnom [A]ICnom [A]
SEMITRANS 3
SEMITRANS 2
GB GAL GAR
SEMITRANS 4
GM
600 V 1200 V 1700 V
600
400300200
1501007550
450400300200
1501007550
400300200
1501007550
600 V 1200 V 1700 V
900
600
400300200
600
400
GA
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SEMIKRON SEMITRANS
Current rating in A
Topology: (GA) Single switch(GAL) Chopper(GAR) Chopper(GB) Half bridge(GD) Sixpack(GM) Common emmitter
Maximum Reverse voltage[V] (Value/100)
IGBT-Technology (3) Standard IGBT2(5) Ultrafast IGBT2(6) IGBT3(T4) Fast IGBT4(E4) IGBT4(V) V-IGBT
Optional: (D) Inverse diode in CAL3-Technology(H…) Special type (special selection / laser marking etc…)
Type Designation System
SEMITRANS
SKM 400 GB 12 6 D
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SEMITRANS
SKM 400 GB 12 6 D
Current rating in A
Definition for NPT, SPT & IGBT3 (e.g. 123, 125, 126, 173, 063) Current rating ≈ ICmax (calculated at Tcase = 25°C)
New current rating for IGBT4, V-IGBT and 600 V IGBT3 (e.g. 066, 12T4, 12E4, 12V) Current rating: ICnom as given by chip supplier
ICnom is given in the data sheet, where VCEsat , Eon & Eoff are specified
Change in Type Designation System
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New Type designation
Change in Type Designation System
SEMITRANS
Old Type designation
SKM200GB12T4 => ICnom=200A SKM300GB126D => ICnom=200A
IC=300A @Tcase=25°C
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SEMITRANS
Agenda
1. Overview
2. Basics
3. Chiptechnologies
3.1 IGBT-Chips
3.2 CAL-Diode-Chips
4. Advantages
5. Market Information
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In general: Parallel to an IGBT-chip a diode chip has to be placed (free wheeling diode)
Basics
SEMITRANS
Diode-Chip:IGBT-Chip:
SEMITRANS-Modules are manufactured by: SEMIKRON Slovakia (types with high production quantities) SEMIKRON Italy (special types and configurations)
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Main Terminals
Auxiliary Terminals
Copper Base Plate
IGBT/Diode-Chip
Bond Wires
DCB (Al2O3)
Module Structure
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FORM
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SEMITRANS
Agenda
1. Overview
2. Basics
3. Chiptechnologies
3.1 IGBT-Chips
3.2 CAL-Diode-Chips
4. Advantages
5. Market Information
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Demands for IGBT Modules
DC-link voltage
Switching frequency
Load conditions
Space
Cooling possibilities
…
Due to the physical limits one single chip technology can not fulfil all demands (!)
SEMITRANS5/12/2015Slide - 15 -
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Supplier Chip Type & Voltage Juntion Temp. Chip Type600 V Super fast (063) Tjmax = 150 °C
IGBT
600 V Trench (066) Tjmax = 175 °C
1200 V Ultra fast (125) lowest Eswitch Tjmax = 150 °C
1200 V NPT (123) (discontinued) Tjmax = 150 °C
1200 V Trench 3 (126) low VCE(sat) Tjmax = 150 °C
1200 V Trench 4 (12T4) Tjmax = 175 °C
1200 V Trench 4 (12E4) Tjmax = 175 °C
1700 V NPT (173) Tjmax = 150 °C
1700 V Trench (176) low VCE(sat) Tjmax = 150 °C
1700 V Trench shr (17E4) (new type series) Tjmax = 175 °C
1200V V-IGBT (12V) Tjmax=175°C
1200 V SPT (128) (discontinued) Tjmax = 150 °C
600 V CAL 3 / HD Tjmax = 150/175 °C
Diode1200 V CAL 3 / 4 (HD) Tjmax = 150/175 °C
1700 V CAL 3 / 4 (HD) Tjmax = 150/175 °C
Chip Technologies
SEMITRANS
Types in grey letters are not for new design
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128 SPT
126 Trench
125 Ultrafast
12T4IGBT 4
123 NPT
fsw [kHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 2420 21 22 23
12E4
12V V-IGBT
Recommended 1200V IGBT switching frequencies
SEMITRANS
Types in grey letters are not for new design
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Parameter Standard123
Ultrafast125
IGBT3126
SPT128
IGBT412T4
IGBT412E4
V-IGBT12V Unit
VCEsat*@25 °C 2.5 3.3 1.7 1.9 1.8 1.8 1.75 V
Eon + Eoff **per 100 A 26 12 26 22 20 22 18 mJ
Chip size per 100 A 156 156 109 158 96 96 94 mm²
Pos. temp. coeff. of VCEsat YES -
QG*** per 100 A 0.85 1.0 0.9 1.2 0.57 0.57 1.15 µC
Tjmax 150 175 °C
Main Parameters for 1200V IGBT series
SEMITRANS
* Chip level** Measured in SEMITRANS case at 125°C (150°C)***Measured @ VGE from -8V to 15V
Parts in grey are not for new design
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SEMITRANS
Innovation on IGBT Technologies
Increase of current density from 85 A/cm² to 130 A/cm²
IGBT Chip size development
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SEMITRANS
NPT (123) “Like a Dray-Horse from a brewery”
Slow
Robust
No “driver`s license” necessary:Find the way on its own
VCEsat: 2,5V
Eon+off:~26mJ/100A @600V, 125°C
100% power per case
Trench4 (12T4/12E4)“Like a Racehorse”
Fast Sensitive For jockeys only:
Doesn’t forgive errors in care and controlVCEsat: 1,8V; Eon+off:~ 21mJ/100A @600V, 125°C
135% power per case
Comparison 2nd and 4th IGBT generation
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SEMITRANS
Increase of junction temperature toTjmax = 175 °C More current due to higher
junction temperature or
Improved reliability by using the higher temperature difference
Increased Tjmax for IGBT4 (Trench 4)
Tj max = 150 °C Tj max = 175 °C
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SEMITRANS
For all IGBT modules SEMIKRON offers the CAL Diode as free wheeling diode
Developed by SEMIKRON Fast
Soft Recovery
CAL diode technologies
CAL 3 (for IGBT2)
CAL 3HD (for IGBT3)
CAL 4F (for IGBT4)
063 066
123,124,125, 126 12T4, 12E4
128 12V
173,174 176 17E4
IGBT 4 / V-IGBT: Tjmax = 175 °CCAL 4F: Tjmax = 175 °C
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FORM
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SEMITRANS
Agenda
1. Overview
2. Basics
3. Chiptechnologies
3.1 IGBT-Chips
3.2 CAL-Diode-Chips
4. Advantages
5. Market Information
5/12/2015Slide - 23 -
www.semikron.com
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Competitor: Not Low Inductance Internal Design
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The comparison of stray inductances showInside the module, SEMIKRON reduced the inductances significantly due to Centre point connection, similar current path for all parallel chips
Parallel DC terminals
SEMIKRON Low Inductance Internal Design
SEMITRANS
LCE,stray ≤ 20 nH
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SEMITRANS
SEMITRANS in comparison
A high di/dt makes a low inductance design of the IGBT module itself necessary
Comparison of Stray Inductances
SEMITRANS 3 (“62 mm”)
SEMITRANS 4 (“62 mm”)
SEMIKRON Max. 20 nH, typ. 15nH
Competition Typ. 20 - 25 nH
SEMIKRON Max. 20 nH, typ. 15nH
Competition Typ. 20 - 25 nH
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High isolation voltage as standard for new technologies
Higher Isolation Voltage
SEMITRANS
Visol [kV]
3.0 kVAC, 1 sec
Old type technologies:063, 123, 173
0 3,0 4,8
4.8 kVAC, 1 sec
+60%
Present and new technologies:066, 125, 126, 12T4, 12E4, 12V,176, 17E4
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SEMITRANS
SEMITRANS Modules additionally are marked with Data Matrix Code
Data Matrix Code Contents Type description
Part number
Production tracking number
Measurement number and line identifier
Continuous number
Data code
Data Matrix Code
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SEMITRANS
All SEMITRANS Modules are in agreement with RoHS(Directive 2002/95/EG: Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)
Since June 2006 we produce all Semitrans Modules with lead free solders
The change to RoHS compatibility is visible with a "R" marking on the product case after the date code
All SEMIKRON products do not contain Mercury, Cadmium, Hexavalent Chromium, PBB or PBDE according to RoHS
Environment
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SEMITRANS
Different IGBT-technologies for different applications
Soft switching freewheeling diodes (CAL-Diode)
Low inductance package design
High isolation voltage
Customer specific solutions
With Data Matrix Code
All Modules in agreement with RoHS
Advantages of SEMITRANS (Summary)
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SEMITRANS
Broad range of IGBT-technologies in one product family optimal adaption to different applications
multiple IGBT sources (Infineon, Fuji)
Soft switching freewheeling diodes ( SEMIKRON CAL-Diode) safe operation, high current performance
optimized for different IGBT generations => high power output, low price/amp
Low inductance package design safe operation, high DC-link voltages possible => high inverter power output
High isolation voltage safe operation
Customer specific solutions
USP‘s
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Thank you foryour attention!
SEMITRANS5/12/2015Slide - 36 -