Resistance measurements at high pressure in the system BaPb1-xBixO3

Post on 15-Jun-2016

214 views 0 download

Transcript of Resistance measurements at high pressure in the system BaPb1-xBixO3

Solid State Communications, Vol. 19, pp. 989-991, 1976. Pergamon Press. Printed in Great Britain

RESISTANCE MEASUREMENTS AT HIGH PRESSURE IN THE SYSTEM BaPb i -x Bix O3

J.B. Clark,* F. Dachille and R. Roy

Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, U.S.A.

(Received 31 March 1976; in revised form 29 April 1976 by F.R.N. Nabarro)

Resistance measurements have been made in the system BaPb t -x Bix O3 at pressures of up to ~ 125 kbar at room temperature. A distinct change in slope erR/Re vs P indicates the onset of a transition, possibly to the metallic state, which takes place continuously over a wide range of pressure.

HIGH PRESSURE phase transitions to the metallic state have recently attracted much attention. An excellent review by Jayaraman I presents the most important recent work. Of special significance to the present study is the discussion on semiconducting to metallic type transitions that occur discontinuously or continuosly as a function of pressure.

The system BaPbl -xBixOa was recently studied 2 and complete solid solubility between BaPbO3 and BaBiO3 was reported. The compounds BaPb I -xBixO3, where x ~< 0.3, were black and metallic, and showed superconductivity. For x > 0.3 the compounds were bronze.like and semiconducting.

The present investigation was undertaken to see if high pressures would induce metallic conduction for the compounds with x > 0.3.

Compounds with various compositions were pre- pared by pressing the appropriate amount of freely

R /Ro

1.00

0 ,75

0.50 -

I

1 I 1 I I I

- - 0

0

0

0

0

I I I

0 0

0 0

ground oxide (Bi203, PbO) and carbonate (BaCO3) into a slug and then heating in air at 800-900°C. The process was repeated twice, and X-ray diffraction techniques showed that none of the starting materials was present.

Four-wire and two.wire resistance measurements were performed on freely ground polycrystalline samples having the following compositions BaPbO3, BaPb0.6s Bio.3503, BaPbo.6Bio.403, BaPb0.sBio.sO3 and BaPbo. 3 Bio. 7 03. Pressure was generated in an opposed anvil device and the sample was either embedded in a pyrophyllite annulus or prepressed into a wafer of the correct diameter. These wafers of samples were made slightly thicker than normal to allow for extrusion under compression. In most cases the samples were of the correct a thickness to achieve favourable pressure distribution, as confirmed by post-run measurement of the sample.

I T I I I I I I 1

B o P b B i 0 0.65 0 .35 3

4 - W I R E M E A S U R E M E N T S

0 0 0 0

0 0 0 0 0 0 0

J J J J 1 J I I I I I . ! I I i I0 2 0 30

I "

0 0 0 0

I I I I

4 0

P R E S S U R E ( K B A R ) ~-

Fig. 1. Results obtained from 4-wire resistance measurements to ~40 kbar on BaPbo. 6s Bio. as Oa.

* N . P . R . L . C . S . I . R . , P . O . Box 395, Pretoria 0001, South Africa.

989

990

t R /

Ro

RESISTANCE MEASUREMENTS IN THE SYSTEM BaPb I _xBixOs

• I " I ~ I I " I " 1 " I " I f 1 ' !

o I I

• 6

o A

o

o •

o

o

t

A

A

~5 6

A

° ' 1 1 I° ~ i 2 A I I A A I I 1' l ' l - - I ' l " t l ~ - - " f " ~

LOO m

0.75

0.50

0.25 .8OPbo.sBio403 - - CURVE I

-BOl%o.,~Bio. O 3 = CURVE 2

& BOPbo.3Bio,703 - - CURVE 3

0 0 0 o o 0 0 0 0

1 " 1

O I I J I l I I I I I . I I J I I 1 t I l I J I i I t I t

O IO 20 :30 40 50 60 70 80 90 IOO IIO 120 1:30 ~ 140

PRESSURE ( K I I A R )

Fig. 2. Results obtained from 2-wire resistance measurements to ~ 125 kbar on: (1) BaPbo.6Bio.403; (2) BaPbo.s Bio. s O3 ; (3) BaPbo. 3 Bio. 7 03.

Vol. 19, No. 10

Figure I shows the results using 4-wire techniques to 40 kbar on a sample of composition BaPb0.~ Bio.3s O3. In this work it is difficult to obtain accurate values for the actual resistivity. Therefore the relative resistance R/Ro (where Ro = initial resistance in each run) is plotted as a function of pressure. Figure 1 shows a sharp initial drop in the value of R/Ro with increasing pressure which is primarily due to the initial compaction of the polycrystalline sample. However, no sharp breaks or marked slope changes were detected to a pressure of ~39 kbar.

In order to extend the pressure range studied, smaller faced anvils (diameter = 4.76 mm) were used, making four-wire measurements difficult. For this reason only two-wire resistance measurements were made of the sample-anvil composite. In total, 26 experiments were performed on the compositions mentioned to a variety of maximum pressures depending on anvil performance. The maximum pressure attained was ~125kbar .

The results obtained from the compositions studied can be summarised as follows: No sharp discontinuous drop in resistance was detected to the maximum pressures studied. This would indicate that no sharp transition to a metallic state occurs. However, Fig. 2 shows the typical results obtained for three different compositions and all curves show the same type of clear slope change at higher pressures. The value for R/Ro initially drops sharply, then passes through a region where it flattens off only to start dropping sharply again at still higher pressures. In all cases the

latter slope change is thought to indicate the onset of a transition. The transition seems to occur over a large range in pressure ) 50 kbar and in most cases is only completed above the maximum pressures attainable in the present work. This can be deduced from Fig. 2 curve 1, where the transition appears to occur at

59 kbar and seems to be nearing completion above 115 kbar. The proposed high pressure phase cannot

automatically be assumed to be a metallic phase in the absence of data with temperature variation.

Experiments done on metallic BaPbO~ showed that the value obtained for R/Ro remained essentially un- changed to -- 100 kbar.

From Fig. 2 it is possible to estimate (as shown) the onset of the transition at "-,59 kbar for BaPbo.6 Bi0.4 03, "" 76 kbar for BaPbo. s Bio. s 03 and ~ 118 kbar for BaPbo. 3 Bio. 703. One might expect a similar trans- ition to occur for BaBiO3 at ~ 175 kbar by linear extrapolation of the above results versus composition.

To confirm the proposed transitions, resistivity measurements on single crystals would be of great value. Measurements on single crystals would remove all intergranular resistance effects which might be present in polycrystalline samples. Figure 3 shows the results obtained for a sample of BaPbo. s Bio. s 03 on increasing and decreasing pressure. The slope change found on increasing pressure is also clearly visible on decreasing pressure. This behaviour was also found for other compositions, but a complete set of data is difficult to obtain on increasing and decreasing pressure because of blow-outs occurring. The reproducible nature of the

Vol. 19, No. 10

1 . 0 0 - r I I I I

0175

R / R ° -

0,50 --

x 0 2 5 - -

I I I I

0 I 0 2

RESISTANCE MEASUREMENTS

0

O

I I I I i I t I I I I I I

B a P b o . 5 B i o . s O 3

o x ° o I

e •

J a l o p n

I I I

INCREASING P R E S S U R E

D B ~ R E A S I N G P R E S S U R E

1 I I I I 1 I I I I I I I I I I 1 I I

0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1(30 i lO

PRESSURE (KBAR)

Fig. 3. Results obtained from 2-wire resistance measure- ments on increasing and decreasing pressure for BaPbo. s Bio. 503.

slope change on increasing and decreasing pressure supports the suggestion that it is related to a phase

IN THE SYSTEM BaPb 1 _xBixO 3 991

change, as opposed to simple intergranular resistance effects in the polycrystalline sample.

Sleight et al. 2 discussed the possible schematic energy level diagram for BaPbO3. They postulated that the 6s band would split above x = 0.35 in the compounds BaPbl -xBi=O3 and thus cause their semiconducting properties. In the light of the above considerations it would seem that the application of sufficient pressure could cause the band gap to close.

The bismuth ions were earlier 4 thought to have the unusual 4 + valency. Such a situation would prob- ably have yielded a metallic BaBiO3. From the latest structural data s available for BaBiO3, using X-ray and neutron diffraction techniques, the true valence state appears to be Ba2 Bi 3 *Bi s ÷O6. This valence situation would appear to be better suited to the semiconducting properties of the compound.

Acknowledgements - The authors would like to thank Dr. A.W. Sleight for helpful discussions and samples which were used to check the present results. This work was carried out under Contract NSF-MRL 6478, and under the auspices of JSPS Grant 4R023 and NSF Grant 01P74-2195B.

REFERENCES

1. JAYARAMAN A., Ann. Rev. Mat. Sci. 2, 121 (1972).

2. SLEIGHT A.W., GILLSON J.L. & BIERSTEDT P.E., Solid State Commun. 17, 27 (1975).

3. MEYERS M.B., DACHILLE F. & ROY R., Rev. Sci. Instrum. 34, 401 (1963).

4. DE HAIR J. TH. W. & BLASSE G., Solid State Commun. 12, 727 (1973).

5. SLEIGHT A.W. (unpublished results - personal communication).