Post on 22-Jul-2020
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Project and Thesis Folder
• Pillars of Institute for Microelectronics:• Teaching: Programming in C
• Device Simulation: Simulation of semiconductor devices
• Experimental: Development of measurement equipment
• Unique chance to improve teaching quality and scientific research
• Optional lectures:• 360.238 Experimental Characterization of Semiconductor Devices
• 360.206 Programmierpraktikum
• Bachelor Thesis
• Master Thesis
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
PCB and Circuit Design forDefect Probing Environment (1)
Supervisor:Michael Waltl
Contact:waltl@iue.tuwien.ac.at01-58801-36050
• Electrical characterization of MOSEFTs
• Custom-made instrument developed at IUE
• Modular design
• Controlled by measurement Computer
• Hardware- and Software development
• Tasks:• Further enhancement of single modules• Developing new modules
• Required Knowledge:• Experience with circuit and PCB design• Programming C/C++, Microcontroller
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
PCB and Circuit Design forDefect Probing Environment(2)
Supervisor:Michael Waltl
Contact:waltl@iue.tuwien.ac.at01-58801-36050
• Enhance sampling rate of data acquisition unit• Selection of new analog to digital converter
• PCB design and assembling
• Adjust Software
• Introduce newer and faster microprocessor into measurement system• Port and optimize microprocessor firmware
• Testing by performing measurements
• Redesign of current to voltage converter unit• Enhance design and functionality of existing unit
• PCB design, assembling and testing
• Adjust software
• Porting from Eagle CAD to OrCAD• Create footprints and libraries
• Setup Spice simulations of circuit components
Projects MW2-MW5
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Enhanced Jobserver for Control ofthe Defect Probing Framework
Supervisor:Michael Waltl
Contact:waltl@iue.tuwien.ac.at01-58801-36050
Project MW6
• One measurement setup per MOSFET
• Many MOSFETs measured in parallel
• Jobserver controls• Measurement sequences• Peripherie
• Jobserver uses sqlite database
• Tasks:• Redesign of Jobserver• Add SMS Service• Possibility for on-the-fly monitoring
• Required Knowledge:• Programming with Python
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Webinterface to Control Defect Probing Environment
Supervisor:Michael Waltl
Contact:waltl@iue.tuwien.ac.at01-58801-36050
• Jobserver controls measurements
• Executed on measurement PC
• No GUI available to control measurements
• Tasks:• Requirements Definition
• Design of Webinterface
• Suitable for PC an mobile devices
• Required Knowledge:• Programming with Python
• Developing of webpages (Django)
Project MW7
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Modeling Stress in Thin Metal Interconnects
• Modeling stress during metal growth gives insight into essential material properties
• Currently, 2D simulations are used, but an extension to 3D is desired
• Tasks
• Introduce 3D to an existing 2D code
• Use VTK libraries to export the structure
• Required knowledge
• Programming in C/C++
• Use of external libraries (i.e. VTK toolkit)
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF1
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Modeling Changes in Metal Microstructureduring Annealing and Self-Heating
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF2
• Metals change their structure during high-temperature annealing
• Self-heating can also lead to changes in the grain structure
• Microstructure evolution can besimulated using the Potts model
• Tasks• Implement the Potts model to
simulate grain structure evolution
• Required knowledge• Programming in C/C++
• Some knowledge in metal microstructure
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Analysis of Heat Distribution in Microhotplates
• Microheaters are essential components in many applications:• Gas sensors, fingerprint sensors, infrared emitters, fuel cells …
• It is desired that the temperature distributes evenly along the surface
• High thermal gradients are bad for the device and its reliability
• Tasks• Model thermal distribution using a
finite element software• Test various designs to minimize the
thermal gradient in the device
• Required knowledge• Programming in C++ and using external libraries• Some knowledge in finite element methods
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF3
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Design a File Format for a Level Set Data Structure in ViennaTS
• The Level Set Method is a framework to implicitly define a topology
• It is frequently used in imaging and in computer animation
• In our code, a hierarchical-run length encoded data structure is implemented
• Tasks
• Design a file format suitable for the Level Set data structure
• Implement an import/export mechanism in the current Level Set code
• Required knowledge
• Programming in C/C++
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF4
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Web Interface / GUI for a Metal Stress Simulator
• We have a topography simulator, which is used to model semiconductor processing steps like etching and deposition (ViennaTS)
• Tasks
• A GUI interface for the simulator
• A web interface for the process simulator
• Required knowledge
• Programming in C++
• Experience in:
• Web development
• Python and/or Qt
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF5-LF6
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Web Interface / GUI for a Metal Stress Simulator
• We have a simulator which models the stress during metal growth
• The simulator can handle a variety of metals and properties
• Tasks
• A GUI interface for the simulator
• A web interface for the stress simulator
• Required knowledge
• Programming in C/C++
• Experience in:
• Web development
• Python and/or Qt
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF7-LF8
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Tracking Electrons in Copper Wires
• We have a software tool written in C which tracks how electrons move in different materials, such as silicon or copper
• The software is currently a small part in a larger code framework, but we want to make it an independent code
• Tasks
• Implement models for electron motion in C
• Make a new software tool from existing code
• Test the model for various geometries
• Required knowledge
• Programming in C
• Some knowledge inmetal microstructure
Supervisor:Lado Filipovic
Contact:filipovic@iue.tuwien.ac.at01-58801-36036
Project LF9
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Analysis and Optimization of Nested Meshes forAdaptive Mesh Refinement
Supervisor:Josef Weinbub
Contact:weinbub@iue.tuwien.ac.at 01-58801-36053
• Adaptive mesh refinement allows to locally increase the mesh resolution
• Key to success is placement of nested meshes
• Tasks
• Analysis of available implementation: mesh criteria and point generation
• Devising an optimized approach to increase quality and minimize points
• Requirements
• Programming in C++ under GNU/Linux
• Basic experiences in numerical methods or data structures
• Exposure to structured meshes is a plus
More Information: http://www.iue.tuwien.ac.at/hptcad/open-positions/masters-thesis-on-analysis-and-optimization-of-nested-meshes-for-adaptive-mesh-refinement/
Join the HPTCAD-Team: http://www.iue.tuwien.ac.at/hptcad/
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Modeling of 2D Materials
• Improving existing models for Transistors based on 2D materials• Contact modeling• Device geometry
• Benchmarking of different approaches• 1D vs. 2D model• scattering dominated vs. ballistic models
• Device degradation• Defect location (dielectrics vs. interfaces)• Extraction of defect bands in different dielectrics
• Goal• Simulations describe measured characteristics
• Required Knowledge:• Programming with Python• Profound physical understanding
Supervisor:Theresia Knobloch
Contact:knobloch@iue.tuwien.ac.at01-58801-36059
Projects TK1 – TK3
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Modeling Hot Carrier Degradation (HCD)
• What is HCD:• Charge carriers in the channel can gain high kinetic energy and trigger the creation of
defects at the Si/SiO2 interface. To obtain the information how carriers are distributed over energy (energy distribution function), a full solution of the Boltzmann transport equation is needed. Combining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
• Possible Projects:• Characterizing the variability of HCD
on a single defect level• Investigating different stress conditions
and transport modes• Open for other HCD related topics …..
• Required Knowledge:• Programming with Python/C++• (Basic) knowledge of device simulations (MEB)
Supervisor:Markus Jech
Contact:jech@iue.tuwien.ac.at01-58801-36034
Project MJ1
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Interplay of Degradation Mechanisms
• Project Goal:• Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major
device reliability issues. However, both degradation modes are usually described and characterized independently. The aim is to understand and model the interplay between BTI and HCD.
• Required Knowledge:• Programming with Python/C++
• (Basic) Knowledge of device simulations (MEB)
• Perform/improve measurements (optional)Supervisor:
Markus Jech
Contact:jech@iue.tuwien.ac.at01-58801-36034
Project MJ2
Institute for MicroelectronicsTU Vienna, Gußhausstraße 27-29/E3601040 Vienna, Austria
Atomistic Simulations
• What is it about:• Ab-initio simulations on an atomistic level are needed to identify the properties of
defects. In this context, Density Functional Theory (DFT) is used to calculate e.g. the energetic position of defects, activation energies, ….. Due to the computational costs, DFT simulations are usually executed on the Vienna Scientific Cluster (VSC).
• Possible Projects:• Identifying Hydrogen related processes
• Characterizing emerging 2D materials
• Open for other topics …..
• Requirements:
• Solid physics knowledge/interest
• Postprocessing data (bash/python/...)
Supervisor:Markus Jech
Contact:jech@iue.tuwien.ac.at01-58801-36034
Project MJ3