Post on 30-May-2019
R07DS0492EJ0200 Rev.2.00 Page 1 of 21 Jun 29, 2011
Preliminary Datasheet
RQA0009TXDQS Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)
Compact package capable of surface mounting Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
1. Gate
2. Source
3. Drain
4. Source
1
3
2, 4
12
3
4
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
Note: Marking is “TX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 16 V
Gate to source voltage VGSS ±5 V
Drain current ID 3.2 A
Channel dissipation Pchnote 15 W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Note: Value at Tc = 25C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0492EJ0200(Previous: REJ03G1520-0100)
Rev.2.00Jun 28, 2011
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 2 of 21 Jun 29, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current IDSS — — 15 A VDS = 16 V, VGS = 0
Gate to source leak current IGSS — — ±2 A VGS = ±5 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.15 0.5 0.8 V VDS = 6 V, ID = 1 mA
Forward Transfer Admittance |yfs| 2.2 3.2 4.4 S VDS = 6 V, ID = 1.6 A
Input capacitance Ciss — 76 — pF VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance Coss — 40 — pF VDS = 6 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF VDG = 6 V, VGS = 0, f = 1 MHz
— 33.1 — dBm Output Power Pout
— 2.0 — W
Power Added Efficiency PAE — 65.7 — %
VDS = 3.6 V, IDQ = 200 mA f = 155 MHz, Pin = +20 dBm (100mW)
— 38.6 — dBm Output Power Pout
— 7.2 — W
Power Added Efficiency PAE — 62.5 — %
VDS = 7.0 V, IDQ = 200 mA f = 155 MHz, Pin = +25 dBm (316 mW)
— 33.0 — dBm Output Power Pout
— 2.0 — W
Power Added Efficiency PAE — 68.5 — %
VDS = 3.6 V, IDQ = 200 mA f = 360 MHz, Pin = +20 dBm (100 mW)
— 38.8 — dBm Output Power Pout
— 7.6 — W
Power Added Efficiency PAE — 69.2 — %
VDS = 7.0 V, IDQ = 200 mA f = 360 MHz, Pin = +25 dBm (316 mW)
— 33.1 — dBm Output Power Pout
— 2.1 — W
Power Added Efficiency PAE — 66.4 — %
VDS = 3.6 V, IDQ = 200 mA f = 465 MHz, Pin = +20 dBm (100 mW)
— 39.0 — dBm Output Power Pout
— 8.0 — W
Power Added Efficiency PAE — 67.9 — %
VDS = 7.0 V, IDQ = 200 mA f = 465 MHz, Pin = +25 dBm (316 mW)
— 35.2 — dBm Output Power Pout
— 3.3 — W
Power Added Efficiency PAE — 60 — %
VDS = 4.8 V, IDQ = 300 mA f = 465 MHz, Pin = +17 dBm (50 mW)
36.8 37.8 — dBm Output Power Pout
4.8 6.0 — W
Power Added Efficiency PAE 60 65 — %
VDS = 6 V, IDQ = 180 mA f = 520 MHz, Pin = +25 dBm (316 mW)
Main Characteristics
Maximum Channel PowerDissipation Curve
0 50 100
Case Temperature TC (°C)
150 2000C
ha
nn
el P
ow
er
Dis
sip
atio
n
Pch
(W
)
5
10
15
20
Drain to Source Voltage VDS (V)
Dra
in C
urr
en
t
I D (A
)
Typical Output Characteristics
0
1
2
3
Pulse Test
0 2 4 6 8 10
4
VGS = 1.0 V
2.0 V
1.5 V
1.25 V
1.75 V
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 3 of 21 Jun 29, 2011
Gate to Source Voltage VGS (V)
Input
Capa
cita
nce
C
iss
(pF
)
Input Capacitance vs.
Gate to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
Outp
ut
Ca
pa
cita
nce
C
oss
(pF
)
10
100
1000
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
0.1 1 10
Drain to Gate Voltage VDG (V)
1
10
100
Re
vers
e T
ransfe
r C
apa
cita
nce C
rss (p
F)
40
50
60
70
80
-5 -4 -3 -2 -1 1 2 3 4 50
90
MSG, MAG vs. Frequency
Maxim
um
Sta
ble
Gain
M
SG
(d
B)
Maxim
um
Availa
ble
Gain
M
AG
(d
B)
Frequency f (MHz)
0.1 1 10
VDS = 0
f = 1 MHz
VGS = 0
f = 1 MHz
VGS = 0
f = 1 MHz
0 500 1000 1500 2000
5
15
25
30
20
10
0
MSG
MAG
VDS = 6 V
ID = 180 mA
0.1
1.0
10.0
0.1 1.0 10.0
Drain Current ID (A)
Forw
ard
Tra
nsfe
r A
dm
itta
nce |
yfs
| (
S)
Forward Transfer Admittance
vs. Drain Current
0 0.5 1.0 1.5 2.00
2
1
4
Dra
in C
urr
ent I D
(A
)
Forw
ard
Tra
nsfe
r A
dm
itta
nce |
yfs
| (
S)
Typical Transfer Characterisitics
3
VDS = 6 V
Pulse Test
Gate to Source Voltage VGS (V)
|yfs| ID
VDS = 6 V
Pulse Test
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 4 of 21 Jun 29, 2011
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)
C1, C3, C10, C11
C2
C4, C13
C5, C12
C6
C7
C8
C9
100 pF Chip Capacitor
27 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF/+16V Chip Tantalum Capacitor
18 pF Chip Capacitor
22 pF Chip Capacitor
56 pF Chip Capacitor
4 pF Chip Capacitor
RF OUT
RF IN
VGG VDD
C1 C2
C3
C5
C6
C12 C13
L1
L4
L2 L3R1
50 Ω
50 Ω
C11
C9
C7
C8
C10
C4
R2
L1
L2
L3
L4
R1
R2
33 nH Chip Inductor
3.6 nH Chip Inductor
7.5 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
33 Ω Chip Resistor
1 kΩ Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in P
G
(dB
)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Outp
ut P
ow
er
P
out (
dB
m)
Pow
er
Added E
ffic
iency
PA
E
(%)
Input Power Pin (dBm)
Dra
in C
urr
ent I D
(A
)
0 5 15 3010 20 250
30
10
20
40
0
20
40
60
10
15
25
40
0
1
2.5
20
1.5
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
ID
30
35
0.5
2
3 80
Pout
0 5 15 3010 20 25
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
PAE
PG
Output Power, Drain Current
vs. Frequency
10
20
40
0
1
3
25
15
2
140 1901200
10
30
20
40
80
15
5
6020
25
30
50
70
Pow
er
Ga
in P
G
(dB
)
120 150 190
Power Gain, Power Added Efficiency
vs. Frequency
Pow
er
Added E
ffic
iency
PA
E
(%)
30
35
0.5
1.5
2.5
Frequency f (MHz)
Dra
in C
urr
ent I D
(A
)
Outp
ut P
ow
er
P
out (
dB
m)
Frequency f (MHz)
PG
PAE
170130 160 180150 130 140 160 170 180
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
Pout
ID
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 5 of 21 Jun 29, 2011
Pow
er
Ga
in P
G
(dB
)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Pow
er
Added E
ffic
iency
PA
E
(%)
200
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
ID
VDS = 3.6V
f = 155 MHz
Pin = +20 dBm
PG
300
PAE
VDS = 3.6 V
f = 155 MHz
Pin = +20 dBm
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in P
G
(dB
)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Outp
ut P
ow
er
P
out (
dB
m)
Pow
er
Added E
ffic
iency
PA
E
(%)
Input Power Pin (dBm)
Dra
in C
urr
ent I D
(A
)
0
10
30
40
0
20
40
60
0 5 15 3010 20
VDS = 7 V
f = 155 MHz
IDQ = 200 mA
20
80
10
15
25
40
0
2.0
2.5
0 5 15 3010 20
20 1.0
0.5VDS = 7 V
f = 155 MHz
IDQ = 200 mA
ID
30
35
1.5
3.0
25 25
PAE
Pout
PG
Pow
er
Ga
in P
G
(dB
)
3 3.5 4 54.5
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
20
40
0
2
IDQ = 200 mA
f = 155MHz
Pin = +20dBm
3
30
15
2.5
4 4.5 5
ID
Pout
3
Pow
er
Added E
ffic
iency
PA
E
(%)
3.5
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Drain to Source Voltage VDS (V)
IDQ = 200 mA
f = 155 MHz
Pin = +20dBm
PG
PAE
25
35
1.5
0.5
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 6 of 21 Jun 29, 2011
Frequency f (MHz)
120 140 180160 190
Power Gain, Power Added Efficiency
vs. Frequency
140 150 160 170 190
Frequency f (MHz)
120
Pow
er
Ga
in
PG
(d
B)
2 4 6 108
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
30
50
0
2
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
4
40
20
3
6 8 10
ID
Pout
2
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
0
1
3
0.5
2.5
10
20
40
25
15
PAE
0
15
25
20
30
4
1
30
35
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
130 150 170
1.5
2
Output Power, Drain Current
vs. Frequency
Dra
in C
urr
en
t
I D
(A)
Pow
er
Ga
in
PG
(d
B)
5
10
20
50
70
60
30
30
40
130 180
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Dra
in C
urr
en
t
I D
(A)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Drain to Source Voltage VDS (V)
Pow
er
Ga
in
PG
(d
B)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
200
1
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Dra
in C
urr
en
t
I D
(A)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
ID
VDS = 7V
Pin = +25 dBm
f = 155 MHz
PG
PAE
PG
300
VDS = 7 V
Pin = +25 dBm
f = 155 MHz
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
PG
PAE
ID
Pout
VDS = 7V
IDQ = 200 mA
Pin = +25 dBm
VDS = 7V
IDQ =200 mA
Pin = +25 dBm
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 7 of 21 Jun 29, 2011
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 360 MHz)
C1
C2, C3,C8,C10
C4, C13
C5, C12, C15
C6, C14
C7
C9, C11
22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF / +16V Chip Tantalum Capacitor
5 pF Chip Capacitor
12 pF Chip Capacitor
RFOUTRFIN
VGG VDD
C1
C2
C4
C7 C10
L1L3
R150 Ω
50 Ω
C14
C13
C12C3
C8
C6
L2
C5
C15
L4 C9 C11
L1
L2
L3
L4
R1
6.8 nH Chip Inductor
1.0 nH Chip Inductor
1.6 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
6.8k Ω Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in
PG
(d
B)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Input Power Pin (dBm)
Dra
in C
urr
en
t
I D
(A)
0 5 15 3010 20 250
30
10
20
40
0
20
40
60
10
15
25
40
0
1
2.5
20
1.5
VDS = 3.6 V
IDQ = 200 mA
f = 360 MHz
ID
30
35
0.5
2
3 80
Pout
0 5 15 3010 20 25
VDS = 3.6 V
IDQ = 200 mA
f = 360 MHz
PAE
PG
Output Power, Drain Current
vs. Frequency
10
20
40
0
1
3
25
15
2
360 400
ID
3000
10
30
20
40
80
15
5
6020
25
30
50
70
Pow
er
Ga
in
PG
(d
B)
300 350 400
Power Gain, Power Added Efficiency
vs. Frequency
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
30
35
0.5
1.5
2.5
Frequency f (MHz)
Dra
in C
urr
en
t
I D
(A)
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Frequency f (MHz)
PG
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
PAE
320 380340
Pout
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 8 of 21 Jun 29, 2011
Pow
er
Ga
in
PG
(d
B)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
200
1
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Dra
in C
urr
en
t
I D
(A)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
IDPG
300
PAE
VDS = 3.6 V
f = 360 MHz
Pin = +20 dBm
VDS = 3.6V
f = 360 MHz
Pin = +20 dBm
Pow
er
Ga
in
PG
(d
B)
3 3.5 4 54.5
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
30
40
0
2
IDQ = 200 mA
f = 360MHz
Pin=+20dBm
3
35
20
4 4.5 5
ID
Pout
3
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
3.5
1
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Dra
in C
urr
en
t
I D
(A)
Drain to Source Voltage VDS (V)
IDQ = 200 mA
f = 360 MHz
Pin=+20dBm
PG
PAE
15
25
0.5
1.5
2.5
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in
PG
(d
B)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Input Power Pin (dBm)
Dra
in C
urr
en
t
I D
(A)
0 5 15 3010 20 250
30
10
20
40
0
20
40
60
10
15
25
40
0
1
2.5
20
1.5
ID
30
35
0.5
2
3 80
Pout
0 5 15 3010 20 25
PG
PAE
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 9 of 21 Jun 29, 2011
Output Power, Drain Current
vs. Frequency
10
20
40
0
1
3
25
15
2
350 400
Pout
ID
3000
10
30
20
40
80
15
5
6020
25
30
50
70
Pow
er
Ga
in P
G
(dB
)
300 350 400
Power Gain, Power Added Efficiency
vs. Frequency
Pow
er A
dded E
ffic
iency P
AE
(%
)
30
35
0.5
1.5
2.5
Frequency f (MHz)
Dra
in C
urr
ent I D
(A
)
Outp
ut P
ow
er
P
out (
dB
m)
Frequency f (MHz)
PG
PAE
Pow
er
Ga
in P
G
(dB
)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Pow
er A
dded E
ffic
iency P
AE
(%
)
200
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
ID
VDS = 7V
Pin = +25 dBm
f = 360 MHz
PG
300
PAE
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
VDS = 7 V
Pin = +25 dBm
f = 360 MHz
Pow
er
Ga
in P
G
(dB
)
2 4 6 108
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
30
50
0
2
IDQ = 200 mA
Pin = +25 dBm
f = 360MHz
4
40
20
3
6 8 10
ID
Pout
2
Pow
er A
dded E
ffic
iency P
AE
(%
)
4
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Drain to Source Voltage VDS (V)
PG
PAE
IDQ = 200 mA
Pin = +25 dBm
f = 360MHz
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 10 of 21 Jun 29, 2011
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 465 MHz)
C1
C2, C3, C7, C10
C4, C13
C5, C12, C15
C6, C14
C8
22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF / +16V Chip Tantalum Capacitor
7 pF Chip Capacitor
RFOUTRFIN
VGG VDD
C1
C2
C4
C7 C10
L1L3
R150 Ω
50 Ω
C14
C13
C12C3
C8
C6
L2
C5
C15
L4 C9 C11
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in
PG
(d
B)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Input Power Pin (dBm)
Dra
in C
urr
en
t
I D
(A)
0 5 15 3010 20 250
30
10
20
40
0
20
40
60
10
15
25
40
0
1
2.5
20
1.5
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
ID
30
35
0.5
2
3 80
0 5 15 3010 20 25
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
PAE
PG
Pout
C9
C11
L1
L2, L3
L4
R1
12 pF Chip Capacitor
2 pF Chip Capacitor
2.7 nH Chip Inductor
1.0 nH Chip Inductor
8 Turns D: 0.5 mm,f2.4mm Enamel Wire
6.8k Ω Chip Resistor
Output Power, Drain Current
vs. Frequency
10
20
40
0
1
3
25
15
2
470 490
Pout
ID
4400
10
30
20
40
80
15
5
6020
25
30
50
70
Pow
er
Ga
in
PG
(d
B)
440 470 490
Power Gain, Power Added Efficiency
vs. Frequency
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
30
35
0.5
1.5
2.5
Frequency f (MHz)
Dra
in C
urr
en
t
I D
(A)
Ou
tpu
t P
ow
er
P
ou
t (
dB
m)
Frequency f (MHz)
PG
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
PAE
450 460 480 450 460 480
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 11 of 21 Jun 29, 2011
Pow
er
Ga
in P
G
(dB
)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Pow
er A
dded E
ffic
iency P
AE
(%
)
200
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
ID
VDS = 3.6V
Pin = +20 dBm
f = 465 MHz
PG
300
VDS = 3.6 V
Pin = +20 dBm
f = 465 MHz
PAE
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in P
G
(dB
)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Outp
ut P
ow
er
P
out (
dB
m)
Pow
er A
dded E
ffic
iency P
AE
(%
)
Input Power Pin (dBm)
Dra
in C
urr
ent I D
(A
)
0 5 15 3010 20 250
30
10
20
40
0
20
40
60
10
15
25
40
0
1
2.5
20
1.5
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
ID
30
35
0.5
2
3 80
0 5 15 3010 20 25
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
PAE
PG
Pout
Pow
er
Ga
in P
G
(dB
)
3 3.5 4 54.5
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
30
40
0
2
IDQ = 200 mA
f = 465MHz
Pin=+20dBm
3
35
20
4 4.5 5
ID
Pout
3
Pow
er A
dded E
ffic
iency P
AE
(%
)
3.5
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Drain to Source Voltage VDS (V)
IDQ = 200 mA
f = 465 MHz
Pin=+20dBm
PG
PAE
15
25
0.5
1.5
2.5
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 12 of 21 Jun 29, 2011
Output Power, Drain Current
vs. Frequency
10
20
40
0
1
3
25
15
2
470 490
Pout
ID
4400
10
30
20
40
80
15
5
6020
25
30
50
70
Pow
er
Ga
in P
G
(dB
)
440 470 490
Power Gain, Power Added Efficiency
vs. Frequency
Pow
er
Added E
ffic
iency
PA
E
(%)
30
35
0.5
1.5
2.5
Frequency f (MHz)
Dra
in C
urr
ent I D
(A
)
Outp
ut P
ow
er
P
out (
dB
m)
Frequency f (MHz)
PG
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
PAE
Pow
er
Ga
in P
G
(dB
)
0 100 200 500400
Power Gain, Power Added Efficiency
vs. Idling Current
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Idling Current
10
30
40
2.5
3
35
20
300 400 5000
Pow
er
Added E
ffic
iency
PA
E
(%)
200
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Idling Current IDQ (mA) Idling Current IDQ (mA)
25
15
1.5
2
0.5
0100
Pout
ID
VDS = 7V
Pin = +25 dBm
f = 465 MHz
PG
300
VDS = 7 V
Pin = +25 dBm
f = 465 MHz
PAE
450 460 480 450 460 480
Pow
er
Ga
in P
G
(dB
)
2 4 6 108
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
0
10
40
30
20
0
20
80
60
40
Output Power, Drain Current
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10
30
50
0
2
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
4
40
20
3
6 8 10
ID
Pout
2
Pow
er
Added E
ffic
iency
PA
E
(%)
PAE
4
1
Outp
ut P
ow
er
P
out (
dB
m)
Dra
in C
urr
ent I D
(A
)
Drain to Source Voltage VDS (V)
PG
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 13 of 21 Jun 29, 2011
Evaluation Circuit (f = 465 MHz@VDS=4.8V)
RFOUTRFIN
VG VD
C1
C2
C5
C8 C10
L1
L3R1
C1, C5, C11, C12
C2, C8
C3
C4, C9, C10
C6, C13
C7, C14
L1
L2
L3
R1
R2
50 Ω50 Ω
C14
C12
C11
R2
C3 C4C9
C7
L2
100 pF Chip Capacitor
22 pF Chip Capacitor
15 pF Chip Capacitor
10 pF Chip Capacitor
2200 pF Chip Capacitor
1 μF / 35 V Chip Tantalum Capacitor
1 nH Chip Inductor
1.8 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
670 Ω Chip Resistor
6.8 kΩ Chip Resistor
C6 C13
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 14 of 21 Jun 29, 2011
Frequency f (MHz)
Po
we
r G
ain
P
G
(dB
)
Power Gain, Power Added Efficiency
vs. Frequency Input Return Loss vs. Frequency
460 470 480
Frequency f (MHz)
450
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Pow
er
Ga
in P
G (d
B)
Drain to Source Voltage VDS (V)
15
17
21
40
50
IDQ = 300 mA
f = 465 MHz
Pin = +17 dBm
70
18
16
60
5 6 7 8
PG
PAE
3
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in P
G
(dB
)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input PowerO
utp
ut P
ow
er
P
out (
dB
m)
Pow
er A
dded E
ffic
iency P
AE
(%
)
Pow
er A
dded E
ffic
iency P
AE
(%
)
Input R
etu
rn L
oss R
L (d
B)
Pow
er A
dded E
ffic
iency P
AE
(%
)
Input Power Pin (dBm)
40
60
80
50
70
16
18
20
17
19
15
17
21
40
50
VDS = 4.8 V
f = 465 MHz
Pin = +17 dBm
70
18
16
6019
20
45
55
65
Pow
er
Ga
in P
G
(dB
)
Idling Current IDQ (A)
0 0.1 0.2 0.3 0.50.4
Power Gain, Power Added Efficiency
vs. Idling Current
Pow
er A
dded E
ffic
iency P
AE
(%
)
PAE
PG
PAE
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
-30
-15
-5
-10
0
4
Dra
in C
urr
ent I D
(A
)
-25
-20
465 475455
19
20
45
55
65
PG
460 470 480450 465 475455
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
0 5 15 3010 20 250
5
10
20
25
0
20
40
60
80
0
10
15
25
40
0
0.6
1.2
1.4
20 0.8
0.2
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
ID
PAE
PG
5
30
35
0.4
1.0
1.6
15
100
Pout
0 5 15 3010 20 25
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 15 of 21 Jun 29, 2011
Evaluation Circuit (f = 520 MHz)
OUTIN
VG VD
C1
C2
C4
C7 C9
L2
L1
L3
R1
C1, C4, C10, C11
C2
C3
C5, C12
C6, C13
C7
C8
C9
L1
L2
L3
R1
R2
50 Ω50 Ω
C12
C11
C10
R2
C5
C3C8
C6 C13
100 pF Chip Capacitor
22 pF Chip Capacitor
5 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF Chip Tantalum Capacitor
18 pF Chip Capacitor
10 pF Chip Capacitor
7 pF Chip Capacitor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
1 nH Chip Inductor
1.8 nH Chip Inductor
670 Ω Chip Resistor
6.8 kΩ Chip Resistor
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 16 of 21 Jun 29, 2011
Frequency f (MHz)
450 470 490 510 530 550
Po
we
r G
ain
P
G
(dB
)
Power Gain, Power Added Efficiency
vs. Frequency Input Return Loss vs. Frequency
470 490 510 530 550
Frequency f (MHz)
450
Pow
er
Ga
in
PG
(d
B)
Idling Current IDQ (A)
0 0.1 0.2 0.3 0.50.4
Power Gain, Power Added Efficiency
vs. Idling Current
VDS = 6 V
f = 520 MHz
Pin = +25 dBm
0
5
20
15
10
60
65
80
75
70
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Pow
er
Ga
in
PG
(d
B)
Drain to Source Voltage VDS (V)
0
10
20
30
50
IDQ = 180 mA
f = 520 MHz
Pin = +25 dBm
70
15
5
60
5 6 7 8 9
PG
PAE
3
Power Gain, Power Added Efficiency
vs. Input Power
Pow
er
Ga
in
PG
(d
B)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input PowerO
utp
ut
Pow
er
P
ou
t (
dB
m)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Inp
ut
Re
turn
Lo
ss
RL
(d
B)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Po
we
r A
dd
ed
Effic
ien
cy
PA
E
(%)
Input Power Pin (dBm)
0
40
80
20
60
0
10
20
5
15
PG
PAE
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
PG
PAE
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
-20
-15
-5
-10
0
4
40
Dra
in C
urr
en
t
I D
(A)
PAE
PG
0
5
10
20
25
0
20
40
60
80
0 5 15 3010 20
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
15
100
0
10
15
25
40
0
0.6
1.2
1.4
0 5 15 3010 20
20 0.8
0.2
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
ID
Pout
5
30
35
0.4
1.0
1.6
25 25
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 17 of 21 Jun 29, 2011
10
54
3
2
1.51.8
-2
-3
-4-5
-10
.6
.4
.2
0
-.2
-.4
-.6-.8 -1
-1.5
.2 .4 .6 .8 1 2 3 4 51.5 10
10
54
3
2
1.51.8
-2
-3
-4-5
-10
.6
.4
.2
0
-.2
-.4
-.6-.8 -1
-1.5
.2 .4 .6 .8 1 2 3 4 51.5 10
Scale: 5 / div.
S11 Parameter vs. Frequency S21 Parameter vs. Frequency
Scale: 0.01 / div.
S12 Parameter vs. Frequency S22 Parameter vs. Frequency
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
0°
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
0°
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 18 of 21 Jun 29, 2011
Scale: 5 / div.
S11 Parameter vs. Frequency S21 Parameter vs. Frequency
Scale: 0.01 / div.
S12 Parameter vs. Frequency S22 Parameter vs. Frequency
10
54
3
2
1.51.8
-2
-3
-4-5
-10
.6
.4
.2
0
-.2
-.4
-.6-.8 -1
-1.5
.2 .4 .6 .8 1 2 3 4 51.5 10
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
0°
10
54
3
2
1.51.8
-2
-3
-4-5
-10
.6
.4
.2
0
-.2
-.4
-.6-.8 -1
-1.5
.2 .4 .6 .8 1 2 3 4 51.5 10
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
0°
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 19 of 21 Jun 29, 2011
S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.868 -154.0 9.85 88.8 0.019 1.2 0.706 -166.8 150 0.861 -159.4 5.42 77.2 0.018 -6.3 0.725 -168.9 200 0.882 -163.9 3.64 68.2 0.016 -14.1 0.755 -170.6 250 0.892 -166.8 2.64 58.5 0.016 -19.2 0.768 -170.6 300 0.899 -169.5 2.06 51.8 0.014 -22.1 0.792 -171.2 350 0.910 -171.6 1.61 45.1 0.013 -27.2 0.805 -171.5 400 0.918 -173.4 1.28 40.3 0.013 -29.3 0.827 -172.2 450 0.926 -175.2 1.04 36.0 0.011 -34.1 0.840 -173.1 500 0.932 -176.8 0.84 31.8 0.010 -33.1 0.855 -173.8 550 0.936 -178.2 0.73 28.8 0.009 -34.5 0.869 -174.6 600 0.940 -179.5 0.62 26.4 0.008 -34.6 0.880 -175.6 650 0.941 179.2 0.54 23.1 0.007 -36.5 0.892 -176.5 700 0.944 178.1 0.45 20.2 0.006 -32.7 0.901 -177.3 750 0.945 176.9 0.41 18.3 0.006 -32.0 0.906 -178.0 800 0.944 175.9 0.37 16.4 0.005 -25.3 0.915 -179.4 850 0.944 174.6 0.31 13.9 0.004 -22.3 0.919 180.0 900 0.943 173.4 0.30 12.1 0.004 -15.2 0.929 178.9 950 0.943 172.3 0.26 10.6 0.003 0.3 0.930 178.1
1000 0.946 171.1 0.23 8.6 0.003 9.1 0.936 177.2 1050 0.949 170.2 0.22 7.3 0.003 20.6 0.940 176.5 1100 0.951 169.4 0.21 6.5 0.004 36.9 0.943 175.5 1150 0.952 168.7 0.18 5.3 0.004 40.3 0.944 174.7 1200 0.952 167.8 0.18 4.3 0.004 52.0 0.950 174.1 1250 0.952 167.0 0.16 3.7 0.005 53.2 0.951 173.3 1300 0.952 166.2 0.14 2.2 0.005 56.8 0.949 172.6 1350 0.952 165.4 0.14 1.3 0.006 60.9 0.956 171.7 1400 0.952 164.6 0.13 0.8 0.006 64.0 0.958 171.0 1450 0.952 164.0 0.12 0.1 0.007 62.2 0.957 170.3 1500 0.952 163.3 0.11 -0.8 0.008 65.4 0.956 169.5 1550 0.952 162.1 0.11 -1.8 0.008 65.9 0.959 168.5 1600 0.952 160.8 0.10 -2.7 0.009 65.6 0.960 168.2 1650 0.952 159.7 0.10 -3.6 0.009 65.9 0.960 167.4 1700 0.952 158.5 0.09 -4.5 0.010 66.6 0.962 166.4 1750 0.952 157.3 0.08 -4.7 0.010 66.2 0.967 165.8 1800 0.952 156.4 0.08 -5.0 0.011 66.5 0.968 165.3 1850 0.952 155.7 0.08 -4.7 0.011 66.5 0.965 164.5 1900 0.953 154.7 0.07 -4.9 0.012 67.0 0.967 163.7 1950 0.958 153.9 0.07 -5.2 0.012 67.0 0.976 163.2 2000 0.965 153.6 0.07 -4.6 0.013 65.5 0.972 162.9 2050 0.963 153.3 0.07 -4.9 0.013 65.4 0.972 161.9 2100 0.956 152.9 0.06 -4.2 0.014 65.3 0.976 161.0 2150 0.950 152.2 0.06 -3.5 0.014 65.2 0.981 160.7 2200 0.944 151.6 0.06 -3.8 0.015 63.9 0.977 160.1 2250 0.936 150.7 0.06 -3.5 0.015 63.9 0.977 159.5 2300 0.932 149.3 0.05 -3.4 0.016 63.0 0.978 158.9 2350 0.932 148.1 0.05 -3.6 0.016 62.8 0.981 158.4 2400 0.929 147.3 0.05 -3.0 0.017 63.0 0.977 158.0 2450 0.923 146.3 0.05 -3.6 0.017 61.3 0.977 157.2 2500 0.917 144.9 0.05 -3.0 0.017 61.8 0.980 156.8
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 20 of 21 Jun 29, 2011
S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.772 -157.0 9.63 88.9 0.013 -1.0 0.776 -172.1 150 0.794 -162.8 5.54 79.0 0.013 -6.3 0.784 -173.8 200 0.812 -167.3 3.91 71.6 0.012 -11.1 0.799 -174.8 250 0.818 -170.4 2.98 64.7 0.011 -13.5 0.805 -174.8 300 0.824 -173.1 2.36 59.1 0.011 -15.2 0.818 -175.0 350 0.831 -175.0 1.92 53.6 0.011 -20.4 0.824 -175.1 400 0.836 -176.6 1.60 48.7 0.010 -21.4 0.837 -175.4 450 0.841 -178.3 1.36 44.8 0.009 -23.3 0.843 -175.8 500 0.848 -179.9 1.15 40.5 0.008 -22.9 0.859 -176.8 550 0.851 179.0 1.00 37.1 0.008 -22.2 0.868 -177.1 600 0.851 177.7 0.87 33.9 0.007 -24.8 0.874 -177.4 650 0.852 176.3 0.77 30.7 0.006 -24.2 0.887 -177.8 700 0.854 174.7 0.69 27.9 0.006 -20.5 0.896 -178.8 750 0.858 173.3 0.60 24.8 0.005 -18.2 0.901 -179.1 800 0.865 171.9 0.54 22.3 0.005 -15.1 0.905 -179.8 850 0.873 170.8 0.49 20.2 0.005 -12.2 0.911 179.5 900 0.878 169.8 0.45 17.9 0.004 -1.7 0.918 178.9 950 0.880 168.8 0.41 16.1 0.004 4.3 0.922 178.3
1000 0.882 167.7 0.37 14.2 0.004 11.2 0.932 177.8 1050 0.886 166.5 0.35 12.4 0.004 21.6 0.931 177.1 1100 0.889 165.5 0.32 10.7 0.004 29.8 0.935 176.5 1150 0.893 164.4 0.29 8.9 0.004 33.2 0.939 175.8 1200 0.898 163.3 0.27 7.5 0.004 40.9 0.944 175.1 1250 0.902 162.4 0.26 6.2 0.005 46.7 0.943 174.6 1300 0.901 161.3 0.23 4.7 0.005 50.8 0.948 174.1 1350 0.902 160.0 0.22 3.3 0.005 54.5 0.948 173.4 1400 0.904 158.7 0.21 1.8 0.006 57.8 0.954 173.1 1450 0.907 157.7 0.19 0.4 0.006 55.3 0.954 172.5 1500 0.904 156.5 0.18 -0.8 0.007 60.5 0.953 171.6 1550 0.905 155.1 0.17 -2.4 0.007 62.1 0.958 171.0 1600 0.912 153.8 0.16 -3.1 0.007 61.1 0.959 170.7 1650 0.915 152.8 0.15 -4.2 0.008 64.3 0.956 170.4 1700 0.919 151.5 0.14 -5.8 0.008 63.2 0.958 169.3 1750 0.926 149.9 0.14 -6.8 0.009 62.7 0.964 168.9 1800 0.938 148.8 0.13 -7.8 0.009 63.0 0.965 168.4 1850 0.942 147.9 0.13 -8.6 0.010 62.6 0.963 167.8 1900 0.942 146.7 0.12 -9.3 0.010 61.9 0.965 167.0 1950 0.945 145.5 0.11 -10.2 0.010 63.8 0.968 166.6 2000 0.946 144.7 0.11 -10.6 0.011 62.4 0.965 166.3 2050 0.942 143.7 0.11 -11.2 0.011 62.2 0.969 165.5 2100 0.939 142.3 0.10 -11.8 0.012 61.2 0.973 164.9 2150 0.940 140.9 0.10 -12.5 0.012 62.0 0.974 164.6 2200 0.942 139.8 0.09 -13.3 0.012 61.3 0.974 164.2 2250 0.939 138.3 0.09 -14.3 0.013 59.2 0.974 163.4 2300 0.937 136.8 0.08 -15.3 0.013 59.6 0.976 163.0 2350 0.937 135.4 0.08 -16.3 0.014 59.8 0.977 162.9 2400 0.935 134.1 0.08 -17.5 0.014 58.9 0.972 162.0 2450 0.932 132.8 0.07 -18.1 0.014 57.9 0.975 161.5 2500 0.931 131.3 0.07 -18.7 0.014 57.7 0.977 161.2
RQA0009TXDQS Preliminary
R07DS0492EJ0200 Rev.2.00 Page 21 of 21 Jun 29, 2011
Package Dimensions
4.5 ± 0.1
1.8 Max1.5 ± 0.1
0.44 Max
0.44 Max0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
± 0
.1
4.2
5 M
ax
0.8
Min
φ 1
0.4 (1.5)
(2.5
)(0
.4)
(0.2
)
Previous Code
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050gSC-62
RENESAS CodeJEITA Package CodeUnit: mm
Package Name
UPAK
Ordering Information
Orderable Part Number Quantity Shipping Container
RQA0009TXTL-E 1000 pcs. 178 mm reel, 12 mm emboss taping
Notice1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.comRefer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.Tel: +1-408-588-6000, Fax: +1-408-588-6130Renesas Electronics Canada Limited1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, CanadaTel: +1-905-898-5441, Fax: +1-905-898-3220Renesas Electronics Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.KTel: +44-1628-585-100, Fax: +44-1628-585-900Renesas Electronics Europe GmbHArcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd.7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679Renesas Electronics (Shanghai) Co., Ltd.Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong LimitedUnit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong KongTel: +852-2886-9318, Fax: +852 2886-9022/9044Renesas Electronics Taiwan Co., Ltd.13F, No. 363, Fu Shing North Road, Taipei, TaiwanTel: +886-2-8175-9600, Fax: +886 2-8175-9670Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632Tel: +65-6213-0200, Fax: +65-6278-8001Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: +60-3-7955-9390, Fax: +60-3-7955-9510Renesas Electronics Korea Co., Ltd.11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, KoreaTel: +82-2-558-3737, Fax: +82-2-558-5141
SALES OFFICES
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1