Post on 26-Jan-2021
PMZ370UNE30 V, N-channel Trench MOSFET14 May 2014 Product data sheet
1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.
2. Features and benefits• Trench MOSFET technology• Low threshold voltage• Very fast switching• ElectroStatic Discharge (ESD) protection > 2 kV HBM• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications• Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits
4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 30 V
VGS gate-source voltage
Tj = 25 °C
-8 - 8 V
ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 900 mA
Static characteristics
RDSon drain-source on-stateresistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 370 490 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 1 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 2 / 14
5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
31
2
Transparenttop view
DFN1006-3 (SOT883)
017aaa255
G
D
S
6. Ordering informationTable 3. Ordering information
PackageType number
Name Description Version
PMZ370UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. MarkingTable 4. Marking codesType number Marking code
PMZ370UNE ZM
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 3 / 14
8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 30 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C [1] - 900 mAID drain current
VGS = 4.5 V; Tamb = 100 °C [1] - 560 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 3.6 A
[2] - 360 mWTamb = 25 °C
[1] - 715 mW
Ptot total power dissipation
Tsp = 25 °C - 2700 mW
Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 680 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Measured between all pins.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 4 / 14
Tj (°C)- 75 17512525 75- 25
017aaa123
40
80
120
Pder(%)
0
Fig. 1. Normalized total power dissipation as afunction of junction temperature
Tj (°C)- 75 17512525 75- 25
017aaa124
40
80
120
Ider(%)
0
Fig. 2. Normalized continuous drain current as afunction of junction temperature
017aaa566
VDS (V)10-1 102101
1
10-1
10
ID(A)
10-2
Limit RDSon = VDS/ID
tp = 1 µs
tp = 10 µs
tp = 100 µs
DC; Tsp = 25 °C
DC; Tamb = 25 °C;drain mounting pad 1 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
[1] - 305 360 K/WRth(j-a) thermal resistancefrom junction toambient
in free air
[2] - 150 175 K/W
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 5 / 14
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistancefrom junction to solderpoint
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa109
tp (s)10- 3 102 10310110- 2 10- 1
102
103
Zth(j-a)(K/W)
10
duty cycle = 1
0.75
0.50.33
0.25 0.2
0.05
0.020.010
0.1
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values017aaa110
tp (s)10- 3 102 10310110- 2 10- 1
102
103
Zth(j-a)(K/W)
10
duty cycle = 1
0.750.5 0.33
0.25 0.2
0
0.1
0.020.01
0.05
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 6 / 14
10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-sourcebreakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
VGSth gate-source thresholdvoltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.77 1.05 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 3 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 3 µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
IGSS gate leakage current
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 370 490 mΩ
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 650 860 mΩ
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C - 470 750 mΩ
RDSon drain-source on-stateresistance
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 630 1300 mΩ
gfs forwardtransconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1580 - mS
Dynamic characteristics
QG(tot) total gate charge - 0.77 1.16 nC
QGS gate-source charge - 0.15 - nC
QGD gate-drain charge
VDS = 15 V; ID = 500 mA; VGS = 4.5 V;Tj = 25 °C
- 0.16 - nC
Ciss input capacitance - 52 78 pF
Coss output capacitance - 9 - pF
Crss reverse transfercapacitance
VDS = 25 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C
- 3 - pF
td(on) turn-on delay time - 11 22 ns
tr rise time - 9 - ns
td(off) turn-off delay time - 54 108 ns
tf fall time
VDS = 15 V; RL = 250 Ω; VGS = 4.5 V;RG(ext) = 6 Ω; Tj = 25 °C
- 27 - ns
Source-drain diode
VSD source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C 0.48 0.76 1.2 V
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 7 / 14
VDS (V)0 2.01.50.5 1.0
017aaa567
0.4
0.6
0.2
0.8
1.0ID(A)
0
4.5 V 2.5 V 2 VVGS = 1.8 V
1.5 V
1 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values
017aaa568
10-4
10-5
10-3
ID(A)
10-6
VGS (V)0 1.251.000.50 0.750.25
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
ID (A)0 1.00.80.4 0.60.2
017aaa569
0.4
0.6
0.2
0.8
1.0RDSon
(Ω)
0
VGS = 1.8 V
2 V
2.5 V
3 V
4.5 V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
VGS (V)0 542 31
017aaa570
1
2
3
RDSon(Ω)
0
Tj = 25 °C
Tj = 150 °C
ID = 500 mA
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 8 / 14
VGS (V)0 2.52.01.0 1.50.5
017aaa571
0.4
0.8
1.2
ID(A)
0
Tj = 150 °C Tj = 25 °C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa572
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues
Tj (°C)-60 1801200 60
017aaa573
0.5
1.0
1.5
VGS(th)(V)
0
min
typ
max
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function ofjunction temperature
VDS (V)10-1 102101
017aaa574
102
10
103
C(pF)
1
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 9 / 14
QG (nC)0 1.00.80.4 0.60.2
017aaa575
2
3
1
4
5VGS(V)
0
ID = 0.5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gatecharge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. Gate charge waveform definitions
VSD (V)0 1.00.80.4 0.60.2
017aaa576
0.4
0.6
0.2
0.8
1.0IS(A)
0
Tj = 150 °C Tj = 25 °C
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t1t2
P
t006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 10 / 14
12. Package outline
03-04-03Dimensions in mm
0.620.550.550.47
0.500.46
0.65
0.200.12
3
2 1
0.300.22
0.300.22
1.020.95
0.35
Fig. 18. Package outline DFN1006-3 (SOT883)
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3(2×)0.4(2×)
0.25(2×)
R0.05 (12×)0.7
Dimensions in mm
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 11 / 14
14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes
PMZ370UNE v.1 20140514 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 12 / 14
15. Legal information
15.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
15.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.
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In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 13 / 14
grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.
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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMZ370UNE30 V, N-channel Trench MOSFET
PMZ370UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 14 May 2014 14 / 14
16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................611 Test information ..................................................... 912 Package outline ................................................... 1013 Soldering .............................................................. 1014 Revision history ...................................................1115 Legal information .................................................1215.1 Data sheet status ............................................... 1215.2 Definitions ...........................................................1215.3 Disclaimers .........................................................1215.4 Trademarks ........................................................ 13
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 14 May 2014
1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Test information12. Package outline13. Soldering14. Revision history15. Legal information