Post on 01-Jan-2016
description
Optical Constants ofOptical Constants ofUranium Nitride Thin FilmsUranium Nitride Thin Films
in the EUV (80-182 eV)in the EUV (80-182 eV)
Marie K. UrryMarie K. Urry
EUV Thin Film GroupEUV Thin Film Group
Brigham Young UniversityBrigham Young University
AcknowledgementsAcknowledgements
Thanks to:Thanks to:
Dr. David D. AllredDr. David D. AllredDr. R. Steven TurleyDr. R. Steven TurleyKristi R. AdamsonKristi R. Adamson
Luke J. BissellLuke J. BissellJennie GuzmanJennie Guzman
Elke JacksonElke JacksonWinston LarsenWinston Larsen
Mindy TonksMindy TonksDepartment FundingDepartment Funding
OutlineOutline
Why We Do What We DoWhy We Do What We Do
Making Thin FilmsMaking Thin Films
Studying Thin FilmsStudying Thin Films
Finding Optical ConstantsFinding Optical Constants ReflectometerReflectometer
Why Extreme Ultraviolet (EUV)?Why Extreme Ultraviolet (EUV)?
AstronomyAstronomy Our IMAGE Satellite Our IMAGE Satellite
Mirror ProjectMirror Project
LithographyLithography Projection ImaginingProjection Imagining Scheduled for 2009Scheduled for 2009
MedicineMedicine High Resolution High Resolution
Imaging MicroscopesImaging Microscopes
Images courtesy of http://euv.lpl.arizona.edu/euv/, www.schott.com/magazine/english/info99/ and www.schott.com/magazine/english/info99/.
Optical ConstantsOptical Constants
Index of refraction:Index of refraction:N = N = n n + + i ki k
In EUV, In EUV, n n ≈ ≈ 1 and 1 and kk is huge. is huge. n n = 1 - = 1 -
kk = =
High High and low and low for maximum reflection for maximum reflection for multilayersfor multilayers..
→→
Delta-Beta Scatter Plot at 220 eVDelta-Beta Scatter Plot at 220 eV
ββ
Why Uranium Nitride?Why Uranium Nitride?
UraniumUranium High theoretical reflectivity due to high High theoretical reflectivity due to high
Problem: OxidationProblem: Oxidation NitrideNitride
Little effect on reflectivityLittle effect on reflectivity Prevents oxidationPrevents oxidation
Computed Reflectance at 10 degrees of various materials
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 50 100 150 200 250 300 350 400 450Photon Energy (eV)
Refle
ctan
ce
Au Ni U
Reflectance computed using the CXRO Website: http://www-cxro.lbl.gov/optical_constants/mirror2.html
Computed Reflectance at 10 degrees of various materials
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
50 70 90 110 130 150 170 190 210 230 250Photon Energy (eV)
Ref
lecta
nce
ThO2 UO2 UN U
Reflectance computed using the CXRO Website: http://www-cxro.lbl.gov/optical_constants/mirror2.html
Delta-Beta Scatter Plot at 220 eVDelta-Beta Scatter Plot at 220 eV
ββ
Making Thin FilmsMaking Thin Films SputteringSputtering
Bombard target, uranium, Bombard target, uranium, with argon ionswith argon ions
Uranium atoms leave Uranium atoms leave target due to collisionstarget due to collisions
Nitrogen partial pressure in Nitrogen partial pressure in plasma introduces N atomsplasma introduces N atoms
U and UN molecules U and UN molecules deposit on our samplesdeposit on our samples
Making Thin FilmsMaking Thin Films 10-30 nm thick10-30 nm thick
Deposited on:Deposited on: silicon waferssilicon wafers quartz slidesquartz slides polyimide filmspolyimide films SiN membranesSiN membranes carbon coated TEM gridscarbon coated TEM grids
Low pressure sputteringLow pressure sputtering smooth, dense, low stress filmssmooth, dense, low stress films
Side Note for ClarificationSide Note for Clarification
Samples 002 – 005Samples 002 – 005 002 and 003 are U002 and 003 are U22NN33
004 and 005 are UN004 and 005 are UN• 005 is new and unmeasured005 is new and unmeasured
Making Thin FilmsMaking Thin Films
Partial pressure Partial pressure determines determines stoichiometrystoichiometry
Our system Our system couldn’t control couldn’t control partial pressures in partial pressures in the critical rangethe critical range
N2 Partial Pressure vs N/U RatioN2 Partial Pressure vs N/U Ratio
Image courtesy of L. Black, et al., Journal of Alloys and Compounds, 315 (2001) 36-41.
Learning About the SamplesLearning About the Samples
CompositionComposition Depends on partial pressure in systemDepends on partial pressure in system
ThicknessThickness Crystal monitor is to the side of the film and Crystal monitor is to the side of the film and
gets less accurate with timegets less accurate with time RoughnessRoughness
Optical ConstantsOptical Constants
X-Ray Photoelectron Spectroscopy X-Ray Photoelectron Spectroscopy (XPS)(XPS)
Uses photoelectric Uses photoelectric effect to find effect to find compositioncomposition
Images courtesy of http://volta.byu.edu/adamson03.pdf .
1000 900 800 700 600 500 400 300 200 100 0
1.8K
1.6K
1.4K
1.2K
1K
800
600
400
200
X-Ray Photoelectron Spectroscopy X-Ray Photoelectron Spectroscopy (XPS)(XPS)
Counts
Energy (eV)
Survey Scan of SurfaceIdentifying Peaks:
100eV – U 5d5/2280eV – C1s380eV – U4f7/2390eV – U4f5/2398eV – N1s530eV – O1s740eV – U4d5/2780eV – U4d3/2980eV – Auger O
X-Ray Photoelectron Spectroscopy X-Ray Photoelectron Spectroscopy (XPS)(XPS)
409.9 404.9 399.9 394.9 389.9 384.9 379.9 374.9
360340320300
280260240220200180
1601401201008060
4020
Uranium Energy Peaks
Counts
Energy (eV)
X-Ray Photoelectron Spectroscopy X-Ray Photoelectron Spectroscopy (XPS)(XPS)
399.9 398.9 397.9 396.9
180
175
170
165
160
155
150
145
140
135
130
Nitrogen Energy Peaks
Counts
Energy (eV)
X-Ray Diffraction (XRD)X-Ray Diffraction (XRD)
To find thicknessTo find thickness m λ = 2d sin θ
UNx004d1
0
500
1000
1500
2000
2500
3 3.5 4 4.5 5 5.5 6Degrees
Co
un
tsUNx003l
100110021003100410051006100710081009100
10100
1.6 2.1 2.6 3.1 3.6Degrees
Co
un
ts
XRD DataXRD Data
Change in theta between 8 peaks minima around theta=1.5 for UO2
XRD DataXRD Data
Atomic Force Microscopy (AFM)Atomic Force Microscopy (AFM)
To Measure To Measure RoughnessRoughness
Result: RMS Result: RMS roughnessroughness
Images courtesy of http://www.weizmann.ac.il/surflab/peter/afmworks/.
Length Scale vs. RMSLength Scale vs. RMSRMS and length scale in nm
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5 1.7 1.9 2.1 2.3 2.5
log [1/(length scale )]
log
(R
MS
)
Y= -0.5666 x +1.677
Transmission Electron Microscope Transmission Electron Microscope (TEM)(TEM)
Transmission Electron Microscope Transmission Electron Microscope (TEM)(TEM)
SAMPLES UN002 UN003 UN004N2 Pressure >1e-4 torr >1e-4 torr ~1e-5 torr
Suspected Phase U2N3 U2N3 UN
Lattice Size
Literature (Å) 5.34 5.34 4.89
XRD (Å) 5.0 4.0
TEM (Å) 5.46 4.98
Ratio (measured/lit) 1.022 1.018
EllipsometryEllipsometry
Optical constants are Optical constants are different for different different for different polarizations of lightpolarizations of light
If we know the If we know the substance and a substance and a model for the optical model for the optical constants, we can constants, we can find thickness and find thickness and optical constants in optical constants in UVUV
Images courtesy of http://www.swt.edu/~wg06/manuals/Gaertner117/ellipsometerHome.htm.
Finding Optical ConstantsFinding Optical Constants
Advanced Light Advanced Light Source at BerkeleySource at Berkeley
Light created by Light created by synchrotronsynchrotron
Measures reflectance Measures reflectance at different angles and at different angles and wavelengthswavelengths
Image courtesy of http://www.lbl.gov/.
ReflectometerReflectometer Reassembled and alignedReassembled and aligned
Hollow Cathode Light SourceHollow Cathode Light Source
Plasma with H or HePlasma with H or He 700 V DC700 V DC Spectral Lines from Spectral Lines from
HeHe 304 Angstroms304 Angstroms
• 2p->1s2p->1s 584 Angstroms584 Angstroms
• 1s2p->1s1s2p->1s22
Found leaksFound leaks Replace plexi-glassReplace plexi-glass
ReflectometerReflectometer Replaced CEMReplaced CEM Purchased stages Purchased stages
and stepper motorsand stepper motors
ElectronMultiplierTube
ReflectometerReflectometer
Lab VIEW Program Lab VIEW Program for Centering Detectorfor Centering Detector Assumed a GaussianAssumed a Gaussian Theta/2*theta Theta/2*theta
misalignmentmisalignment
ReflectometerReflectometer
Other ImprovementsOther Improvements Circuit diagramsCircuit diagrams SOP’sSOP’s
Still workingStill working Fixing virus problemsFixing virus problems
On to Berkeley!On to Berkeley!
OutlineOutline
Background (9 minutes)Background (9 minutes) Why EUV? Why EUV? Optical ConstantsOptical Constants Why Uranium?Why Uranium?
Making & Studying Thin Making & Studying Thin Films (13 minutes)Films (13 minutes)
SputteringSputtering XPSXPS XRDXRD AFMAFM TEMTEM EllipsometryEllipsometry
Finding Optical Constants Finding Optical Constants (10 minutes)(10 minutes)
What we want to knowWhat we want to know ALSALS Reflectometer/ Reflectometer/
MonochromatorMonochromator Results/Continuing Results/Continuing
Research (8 minutes)Research (8 minutes) Acknowledgements (1 Acknowledgements (1
minute)minute)
To DoTo Do
Learn about light source (internet)Learn about light source (internet) Ellipsometry stuff (Dr. Allred)Ellipsometry stuff (Dr. Allred) Update “Problem!!” and data slides (Dr. Update “Problem!!” and data slides (Dr.
Allred)Allred)
IMDIMD
Written by David WendtWritten by David Wendt Computes reflectivities of materials based Computes reflectivities of materials based
on their optical constantson their optical constants We used UO model because of similar We used UO model because of similar
densitiesdensities (Insert graph here)(Insert graph here)
Problem!!Problem!!
Our samples change with time.Our samples change with time. The peaks seen in XRD move.The peaks seen in XRD move.
Continuing research in this area.Continuing research in this area.