Post on 27-Mar-2018
2013
International Conference
On CompoundSemiconductor
MANufacturing TECHnology
Digest of Papers
May 13m - Iff", 2013
Hilton New Orleans Riverside
New Orleans, Louisiana, USA
Table of Contents
8:30 AM
8:55 AM
9:20 AM
9:45 AM
10:40 AM
11:05 AM
11:30 AM
Tuesday, May 14th
SESSION 1: PLENARY I - GaAs INDUSTRY OVERVIEW
Chair: Scott Sheppard, Cree, Inc.
InvitedPresentation
1.1 Challenges of Short Lifecycle Commercial Products in Compound Semiconductor
Manufacturing 3
Howard S. Witham, TriQuint Semiconductor
Invited Presentation
1.2 GaAs Foundry: Challenges and Future 7
DavidDanzilio, WIN Semiconductors Corp.
Invited Presentation
1.3 A Co-operative Business Model for Advancing Compound Semiconductor Technology 11
Jerry Curtis, Global Communication Semiconductors
Invited Presentation
1.4 GaAs Industry Overview and Forecast: 2011 - 2016 Abstract 13
Eric Higham, Strategy Analytics, Inc.
SESSION 2: PLENARY H - PHOTONICS IC VOLUME MANUFACTURING
Chair: David Wang, Global Communication Semiconductors
Invited Presentation
2.1 Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits 19
J. Pleumeekers, E. Strzelecka, K.-P. Yap, A. James, P. Studenkov, P. Debackere, T. Nguyen, S. Agashe,N. Kim, V. Lai, J. Won, C. Hill, Z. Wang, I. Dudley, A. Dentai, Q. Chen, D. Christini, R. Salvatore, D.
Lambert, M. Lai, M. Missey, R. Muthiah, J. Rossi, P. Liu, S. Craig, R. Schneider, M. Reffle, F. Kish,
Infinera Corporation
Invited Presentation
2.2 Multi-Guide Vertical Integration in InP -A Regrowth-Free PIC Technology for OpticalCommunications 23
Valery Tolstikhin, OneChip Photonics, Inc.
Invited Presentation
2.3 Heterogeneous Integration as a Manufacturing Platform for Photonic
Integrated Circuits 27
Eric Hall, Jae Shin, Gregory Fish, Aurrion, Inc.
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xvii
SESSION 3: OPTOELECTRONICS TECHNOLOGIES
Chair: Yohei Otoki, Hitachi Cable, Ltd.
1:20 PM Invited Presentation
3.1 The Latest Progress ofNitride-based Visible LEDs and Laser diodes: Nonpolar and
Semipolar Devices vs. Polar (C-plane) Devices 31
Shuji Nakamura, University ofCalifornia, Santa Barbara
1:45 PM Invited Presentation
3.2 The Discovery of HJ-V Oxidation, Device Progress, and Application to Vertical-Cavity
Surface-Emitting Lasers 33
J. M. Dallesasse, University ofIllinois at Urbana-Champaign
2:10 PM Invited Presentation
3.3 Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology 37
Klein Johnson, Vixar, Inc.
2:35 PM Invited Presentation
3.4 AlInGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications
Technology 41
AsifKhan, University ofSouth Carolina
SESSION 4a: PROCESS - BACKSIDE
Chair: Michelle Bourke, OxfordInstruments Plasma Technology
3:30 PM 4a.l Advances in Back-side Via Etching of SiC for GaN Device Applications 47
Anthony Barker1, Kevin RiddelV', Huma Ashrqf & Dave Thomas', Chia-Hao Chen2, Yi-Feng Wei2,1-Te Cho2 & Walter Wohlmuth2, 'SPTS Technologies,
2WIN Semiconductors Corp.
3:50 PM 4a.2 Meeting the Fabrication Challenges For Backside Processing on Thin Substrates with
Ultrahigh Device Topography 51
Pavan Bhatia1, Roberta Hawkins1, Jan Campbell1, Martin hie1, Alex Smith2, Mark Privett2, Gary
Brand2, 'TriQuint Semiconductor,2Brewer Science, Inc.
4:10 PM 4a.3 Wafer-level Backside Process Technology for Forming High-density Vias and Backside
Metal Patterning for 50-um-thick InP Substrate 55
Takuya Tsutsumi, Toshihiko Kosugi, and Hideaki Matsuzaki, NTTPhotonics Laboratories, NTT
Corporation
4:30 PM Student Presentation
4a.4 Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing IH-
V Heterostructure Devices 59
Yuning Zhao, Patrick Fay, University ofNotre Dame
xviii CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
SESSION 4b: PROCESS - LITHOGRAPHY
Chairs: Robert Mohondro, Plasma-Therm, LLC, Kamal Alavi, Raytheon
3:30 PM 4b.1 Thick Film Photo Resist Application Spun on Application v. Dry Film Lamination 65
Suzanne Combe, TriQuint Semiconductor
3:50 PM 4b.2 The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 urn)BCB 69
J. Parke, A. Gupta, J. Mason, K Renaldo, Northrop Grumman Electronic Systems
4:10 PM 4b.3 Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic
Devices using a DMAIC Approach 73
Jan Campbell, Martin Ivie, Qizhi He, TriQuint Semiconductor
4:30 PM 4b.4 Automated Skiplot Sampling for Photoresist Thickness Measurement 77
David Punsalan, Donald Pursley, Christopher Roper, TriQuint Semiconductor
Wednesday, May 15th
SESSION 5a: RF GaNPRODUCEBELITY
Chairs: David Meyer, US Naval Research Laboratory, Glen "David" Via, Air Force Research Laboratory
8:00 AM Invited Presentation
5a.l Recent Defense Production Act Title HI Investments In Compound Semiconductor
Manufacturing Readiness 83
Gene Himes1, David Maunder2, Bruce Kopp2, 'Air Force Research Laboratory, 2David P. Maunder
Consulting
8:30 AM 5a.2 Raytheon Title HI Gallium Nitride (GaN) Production Program 87
Joseph Smolko, Colin Whelan, Christopher Macdonald, Joshua Krause, Bradley Mikesell, Michael
Benedek, Raytheon Corp.
8:50 AM 5a.3 Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-fim GaN on
SiC HEMT Process 91
C. Delia-Morrow, C. Lee, K. Salzman, TriQuint Semiconductor
9:10 AM 5a.4 GaN-on-SiC MMIC Production for S-Band and EW-Band Applications 95
Ryan Fury, Scott Sheppard, Jeffrey B. Barner, Bill Pribble, Jeremy Fisher, DonaldA. Gajewski,Fabian Radulescu, Helmut Hagleitner, Dan Namishia, Zoltan Ring, Jennifer Gao, Sangmin Lee, Jim
Milligan andJohn Palmour, Cree, Inc.
9:30 AM 5a.5 GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned
Arrays 99
Mike Harris, Robert Howard and Tracy Wallace, Georgia Tech Research Institute
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
SESSION 5b: EPITAXY & MATERIALS
Chairs: Guoliang Zhou, Skyworks Solutions, Inc., Paul Pinsukanjana, IntelHEPI
8:00 AM Invited Presentation
5b.l A Comparison of MOVPE and MBE Growth Technologies for m-V
Epitaxial Structures 105
Rodney Pelzel, IQE Wireless
8:30 AM 5b.2 Impact ofcrystal-quality improvement ofepitaxial wafers on RF and power switchingdevices by utilizing VAS-method grown GaN substrates with low-density and uniformlydistributed dislocations 109
Yohei Otoki1, Takeshi Tanaka1, Hiroyuki Kamogawa1, Naoki Kaneda', Tomoyoshi Mishima1, Unhi
Honda2,and Yutaka Tokuda21Hitachi Cable, Ltd, 2Aichi Institute ofTechnology
8:50 AM Student Presentation
5b.3 Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence?..... 113
Nicole Killat*', Michael J. Uren1, David J. Wallis2, Trevor Martin3, and Martin Kuball1, '
University ofBristol, 2University ofCambridge, 3IQE PLC
9:10 AM 5b.4 Performance and Reliability of AlGaN/GaN HEMT on 100-mm SiC Substrate with
Improved Epitaxial Growth Uniformity 117
Sangmin Lee, Tim Kennedy, Christer Hallin, HelderAntunes, Brian Fetzer, Scott T. Sheppard, Al
Burk, Don A. Gajewski, Rick McFarland, Jim Milligan andJohn Palmour, Cree, Inc.
9:30 AM 5b.5 Development of an Epitaxial Growth Process on European SiC Substrates for a Low
Leakage GaNHEMT Technology with Power Added Efficiencies Around 65% 121
P. Waltereit', S. Muller1, L. Kirste1, S. Storm2, A. Weber2, J. Splettstdfier3, B. Schauwecker3,'Fraunhofer Institutefor AppliedSolid State Physics, 2SiCrystal AG,
3UnitedMonolithic
Semiconductors GmbH
SESSION 6a: GaN PROCESS, DEVICE, & CmCUITS
Chairs: Karen Moore, Freescale Semiconductor, Inc., Ming-yi Kao, TriQuint Semiconductor
10:20 AM 6a.l An Optical 0.25-um GaN HEMT Technology on 100-mm SiC for RF Discrete and FoundryMMIC Products 127
Simon M. Wood, Scott T. Sheppard, Fabian Radulescu, Don A. Gajewski, Bill Pribble, Donald Farrell,
UlfAndre Jeffrey B. Barner, Jim Milligan and John Palmour, Cree, Inc.
10:40 AM Student Presentation
6a.2 Effect ofsputtered SiN passivation on current collapse of AlGaN/GaN HEMTs 131
Md. Tanvir Hasan, Toshikazu Kojima, Hirokuni Tokuda, and Masaaki Kuzuhara, University ofFukui
11:00 AM 6a.3 Investigation ofAlGaN/GaN HEMTs Passivated by A1N Films Grown by Atomic
Layer Epitaxy 135
A.D. Koehler1, N. Nepal1, T.J. Anderson', M.J. Tadjer2, K.D. Hobart1, C.R Eddy, Jr.1, F.J. Kub','Naval Research Laboratory, 2UniversidadPolitecnica de Madrid
11:20 AM Student Presentation
6a.4 Fabrication Technology of GaN/AlGaNHEMT Slanted Sidewall Gates Using ThermallyReflowed ZEP Resist and CHFs/SFs Plasma Etching 139K. Y. Osipov, W. John, N. Kemf S. A. Chevtchenko, P. Kurpas, M. Matalla, O. Kriiger, andJ. Wiirfl,Ferdinand-Braun-Institut
xx CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
11:40 AM 6a.5 Development and Control of a 0.25um Gate Process Module for AlGaN/GaN
HEMT Production 143
Wei-Chou Wang, Chia-Hao Chen, Jhih-Han Du, Ming Hung Weng, Che-Kai Lin, Willie Huang, RickyChang, Shih-Hui Huang, Yi-Feng Wei, Stanley Hsieh, Michael Casbon, Paul J. Tasker, Wen-Kai
Wang, I-Te Cho, Walter Wohlmuth, WINSemiconductor Corp.
SESSION 6b: MANUFACTURING: TEST & CHARACTERIZATION
Chairs: Peter Ersland, M/A-COM Technology Solutions, Hidetoshi Kawasaki, Sony
10:20 AM 6b.l Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes 149
Cristian Cismaru andPeter J. Zampardi, Skyworks Solutions, Inc.
10:40 AM 6b.2 Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional
Through Wafer Via Process and Copper Pillar Bump Process 153
Hsiu-Chen Chang, Shu-Hsiao Tsai, Cheng-Kuo Lin, Tim Hsiao, Steven Chou, Chen, Pi-Hsia Wang,andDennis WilliamsJu-Yung, WINSemiconductors Corp.
11:00 AM 6b.3 Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps 157
Martin J. Brophy, Chin-Shun Chen, Keith Quick, Avago Technologies
11:20 AM 6b.4 Real-time Validation of Probe Contact Quality in GaAsPCM Testing 161
Martin J. Brophy, Phil Marsh, Anthony Martinkus, andJudy Huggenberger, Avago Technologies
11:40 AM 6b.5 Real Time Dynamic Application of Part Average Testing (PAT) at Final Test 165
Douglas Pihlaja, TriQuint Semiconductor
SESSION 7a: THERMALDESIGN I
Chair: John Blevins, Air Force Research Laboratory
1:30 PM InvitedPresentation
7a.l DARPA's Intra/Interchip Embedded Cooling (ICECool) Program 171
Avram Bar-Cohen1, Joseph J. Maurer2, Jonathan G. Felbinger2, 'Defense Advance Research Projects
Agency, 2Booz Allen Hamilton
2:00 PM 7a.2 GaNHEMT Near Junction Heat Removal 175
Rajinder Sandhu', Vincent Gambin1, Benjamin Poust1, Ioulia Smorchkova', Gregg Lewis', Raffi
Elmadjian', Danny Li', Craig Geiger', Ben Heying1, Mike Wojtowicz1, Aaron Oki', Tatyana
Feygelson2, Karl Hobart3, Bradford Pate3, Joe Tabeling4, Elah Bozorg-Grayeli5, Kenneth Goodson,
'Northrop Grumman Aerospace Systems, 2SAIC, 3Naval Research Laboratory, 4Applied Diamond, Inc.,
5Stanford University
2:20 PM 7a.3 A New High Power GaN-on-Diamond HEMT with Low-Temperature Bonded Diamond
Substrate Technology 179
P.C. Chao, K ChuandC. Creamer, BAE Systems
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxi
SESSION 7b: TRAPS & TRANSIENTS
Chairs: Tom Low, Agilent Technologies, Chang-Hwang Hua, WIN Semiconductors Corp.
1:30 PM InvitedPresentation
7b.l Correct Determination of Trap Densities at High-k/HI-V Interfaces 185
R. Engel-Herbert, Pennsylvania State University
2:00 PM 7b.2 Temporal Characterization ofDefects and Evolution of Strain in AIGaN/GaN HEMTs
Under Bias 189
H. Ghassemi', A. Lang1, C. Johnson2, R. Wang3, B. Song3, H. Xing3, andM. L. Taheri', 'Dept. ofMaterials Science and Engineering, Drexel University, 2Centralized Research Facilities, Drexel
University,3 University ofNotre Dame
2:20 PM Student Presentation
7b.3 Study of Interfacial Charge Properties and Engineering of ALD dielectric/m-Nitride
Interfaces 191
Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park
and Siddharth Rajan, Dept. ofElectrical and Computer Engineering, The Ohio State University
2:40 PM 7b.4 GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level
Centers in GaN/AlGaN HEMTs 195
M. Silvestri1, M. J. Uren', D. Marcon2, andM. Kuball', 'University ofBristol, 2IMEC
3:00 PM 7b.5 Ultra Fast Switching Speed FET Technology Development 199
Jerod Mason, Guoliang Zhou, Joe Bulger, Jay Yang, David Petzold, Dylan Bartle, Skyworks Solutions,
Inc.
SESSION 8a: THERMALDESIGN H
Chairs: Andy Souzis, II-VI, Martin Kuball, University ofBristol
3:40 PM 8a. 1 Process Improvements for an Improved Diamond-capped GaNHEMT Device 205
T.J. Anderson', A.D. Koehler', M.J. Tadjer2, K.D. Hobart', T.I. Feygelson3, B.B. Pate', F.J. Kub',1Naval Research Laboratory, 2Universidad Politecnica de Madrid, Spain, 3SAIC, Inc.
4:00 PM 8a.2 Ag/Diamond Composite Shims for HPA Thermal Management 209
Jason H. Nadler, Keri A. Ledford, H. Michael Harris and Brent K. Wagner, Georgia Tech Research
Institute
4:20 PM 8aJ Thermal and Mechanical Sensors for Advancement of GaN RFMMIC Technologies 211
B. Wagner1, H.M. Harris', M. King1, H. Chan1, N. Minor2 andL. B. Burns2, 'Georgia Tech Research
Institute, 2PEO Integrated Warfare Systems, Naval Sea Systems Command
4:40 PM 8a.4 GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-
Thermal Modeling 215
Nicola Delmonte, Paolo Cova, and Roberto Menozzi, University ofParma
5:00 PM 8a.5 InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect 219
Nick GM Too, Chien-Ping Lee, Tony St. Denis and Tim Henderson, TriQuint Semiconductor, Inc.
xxii CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
SESSION 8b: PROCESS - METAL
Chairs: Suzanne Combe, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS
3:40 PM 8b.l High Precision Thin Metal Film Measurement by Optical Transmission 225
Kezia Cheng, and Bing Hui Li, Skyworks Solutions, Inc.
4:00 PM 8b.2 SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature 229
D. J. Meyer1, D. A. Deen2, B. P. Downey', D. S. Katzer1, D. F. Storm1, andS. C. Binari', 'Naval
Research Laboratory,2University ofMinnesota
4:20 PM 8b.3 Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization ofGaAs
Devices 233
Daisuke Tsunami, Koichiro Nishizawa, Toshihiko Shiga, Tomoki Oku and Masayoshi Takemi,
Mitsubishi Electric Corporation
4:40 PM 8b.4 Optimization of Electroplating Processes for Copper Bumps 237
Elizabeth Tan Calora and Travis Abshere, TriQuint Semiconductor
5:00 PM 8b.5 Back Metal Optimization for PbSn Die Attach Assembly 241
Jose Suarez, Jason Fender, and Jenn-Hwa Huang, Freescale Semiconductor
Thursday, May 16th
SESSION 9a: WIDE BANDGAPPOWER DEVICES
Chairs: Toshihide Kikkawa, Fujitsu Laboratories, Shyh-Chiang Shen, Georgia Tech
8:00 AM Invited Presentation
9a.l High Temperature (> 200 °C), High Frequency Multi-Chip Power Modules 247
Ty McNutt, Brandon Passmore, Zach Cole, Bret Whitaker, Adam Barkley, Alex Lostetter, Arkansas
Power Electronics International, Inc.
8:30 AM 9a.2 Emerging Applications for GaN Transistors 251
David Reusch, Alex Lidow, Johan Strydom, Michael de Rooij, Efficient Power Conversion Corporation
8:50 AM Student Presentation
9a.3 600 V High-Performance AlGaN/GaN HEMTs with AIN/SiNx Passivation 255
Zhikai Tang, Sen Huang, Qimeng Jiang, Shenghou Liu, Cheng Liu and Kevin J. Chen, The Hong Kong
University ofScience and Technology
9:10 AM 9a.4 600V-900V GaN-on-Si Process Technology for Schottky Barrier Diodes and Power Switches
Fabricated in a Standard Si-Production Fab 259
J.J.T.M. Donkers', S.B.S. Heil2, G.A.M. Hurkx1, H. Broekman3, R Delhougne', J.A. Croon2, D.
Gravesteijn', J. Sonsky', 'NXP Semiconductors Research, Belgium, 2NXP Semiconductors Research,
High Tech Campus, TheNetherlands, 3NXP Semiconductors Nijmegen, The Netherlands
9:30 AM 9a.5 182W L-band GaN High Power Module with 66% Power Added Efficiency Based on
European Technologies 263
Stephane Rochette', Olivier Vendier1, Dominique Langrez1, Jean-Louis Cazaux'', Michael Buchta2,Martin Kuball3, Alain Xiong4, 'Tholes Alenia Space, 2UMS GmbH,
3University ofBristol, 4AMCAD
Engineering
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxiii
SESSION 9b: LED OUTLOOK & TECHNOLOGY
Chairs: Ruediger Schreiner, Aixtron SE, Gene Kohara
8:10 AM InvitedPresentation
9b.l Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates 269
Sir Colin J. Humphreys, University ofCambridge
8:40 AM InvitedPresentation
9b.2 How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming LED Industry 273
Philippe Roussel, Yole Developpement
9:10 AM 9b.3 Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching 275
H. Ogiya, T. Nishimiya, M. Hiramoto, S. Motoyama, O. Tsuji, and P. Wood, Samco, Inc.
9:30 AM Student Presentation
9b.4 Improvement in enhanced spontaneous emission ofResonance Cavity Light EmittingTransistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector 279
Mong-Kai Wu, Michael Liu, and Milton Feng, University ofIllinois at Urbana-Champaign
SESSION 10a: MATERIALS: GaN EPI
Chairs: Judy Kronwasser, NOVASiC, Robert Sadler, Global Communications Semiconductors, LLC
10:10 AM lOa.l MOCVD Growth of AlGaN/GaN Heterostructures on 150 mm Silicon 285
Jie Su, Hongwei Li, Seungjae Lee, Balakrishnan Krishnan, Dong Lee, George Papasouliotis, and AjitParanjpe, Veeco MOCVD Operations
10:30 AM 10a.2 Uniformity Studies of AlGaN/GaN HEMTs on 200-mm Diameter Si(lll) Substrate 289
S. Arulkumaran1, G. I. Ng2, S. Vicknesh1, CM. Manojkumar1, K.S. Ang1, H. Wang2, M.J. Anand2, K
Ranjan', S. L. Selvaraf, W. Z. Wang3, G.-Q. Lo3, S. Tripathy4, 'Temasek Laboratories, NanyangTechnological University, 2Novitas, Nanoelectronics Centre ofExcellence, School ofEEE, NanyangTechnological University, 3A *star Institute ofMicroelectronics, 4A *star Institute ofMaterialsResearch and Engineering,
10:50 AM 10a.3 High Voltage GaN-on-Silicon HEMTs 293
T. Boles', C. Varmazis', D. Carlson1, L. Xia1, D. Jin1, T. Palacios2, G. W. Turner3, R. J. Molnar3, 'M/A
COM Technology Solutions, 2Massachusetts Institute ofTechnology, 3Massachusetts Institute ofTechnology, Lincoln Laboratory
11:10 AM 10a.4 High Voltage GaN-on-Silicon Schottky Diodes 297
T. Boles', C. Varmazis', D. Carlson', L. Xia', D. Jin', T Palacios2, G. W. Turner3, R. J. Molnar3, lMJA
COM Technology Solutions, 2Massachusetts Institute ofTechnology, 3Massachusetts Institute ofTechnology, Lincoln Laboratory
11:30 AM Student Presentation
10a.5 Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire 301
Pei Zhao, Amit Verma, Jai Verma, HuiliXing and Debdeep Jena, University ofNotre Dame
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
SESSION 10b: PROCESS - INTEGRATION
Chair: Steve Mahon, Cascade Microtech, Inc.
10:10 AM lOb.l Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power
Amplifier Applications 307
Shu-Hsiao Tsai, Rong-Hao Syu, Yu-Ling Chen, Wen-Fu Yu, Cheng-Kuo Lin, and Dennis Williams,
WIN Semiconductors Corp.
10:30 AM 10b.2 Evaluation of Material and Process Contributions to BiFET Variation UsingDesign ofExperiments 311
Peter J. Zampardi, Bin Li, Cristian Cismaru, Hal Banbrook, andAndre Metzger, Skyworks Solutions,
Inc.
10:50 AM 10b.3 Bulk Acoustic Wave Technology Advances 315
G. Fattinger, R. Aigner, P. Stokes, A. Volatier, F. Dumont, TriQuint Semiconductor
11:10 AM 10b.4 Heterointegration Technologies for High Frequency Modules Based on Film Substrates 319
Karlheinz Bock, Erwin Yacoub-George, Henry Wolf, ChristofLandesberger, Gerhard Klink, and Horst
Gieser, University ofBerlin
11:30 AM 10b.5 Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling 323
Xiaokang Huang, Liping Zhu, Bang Nguyen, Van Tran, Harold lsom, TriQuint Semiconductor
SESSION 11a: GaN GATE DIELECTRICS
Chair: Patrick Fay, University ofNotre Dame
1:10 PM Invited Presentation
11a.1 Characterization and Control of Insulated Gate Interfaces on
GaN-Based Heterostructures 329
Tamotsu Hashizume'2 and Masamichi Akazawa1, 'Hokkaido University, 2JST-CREST
1:40 PM Student Presentation
lla.2 A Study on A1203 Deposition by Atomic Layer Deposition for Hi-Nitride Metal-Insulator-
Semiconductor Field Effect Transistors 333
Yi-Che Lee, Tsung-Ting Kao, andShyh-Chiang Shen, Georgia Tech University
2:00 PM lla.3 Thermal Oxidization of MIS Interface between Etched GaN and ALD-A1203 337
Tetsuya Fujtwara1, MinoruAkutsu1, Norikazu Ito1, Junichi Kashhvagi'', Kentaro Chikamatsu', Ken
Nakahara1, andMasaaki Kuzuhara2, 'ROHMCo., Ltd., 2University ofFukui
2:20 PM Student Presentation
lla.4 High Performance Enhancement-ModeAlGaN/GaN MOSHEMT using Bimodal-Gate-
Oxide and Fluoride-Based Plasma Treatment 341
Liang Pang and Kyekyoon Kim, University ofIllinois at Urbana-Champaign
2:40 PM lla.5 Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN
Grown on High Resistance <111> Si Substrates by Molecular Beam Epitaxy 345
Jeffrey LaRoche, William Hoke, DavidAltman, James McClymonds, Paul Alcorn, Kurt Smith, Eduardo
Chumbes, JeffLetaw, and Thomas Kazior, Raytheon IDS Microelectronics
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxv
SESSION lib: YIELD ENHANCEMENT ANDMANUFACTURING
Chair: Marty Brophy, Avago Technolgies
1:10 PM Invited Presentation
llb.l Challenges of Equipment Support in a Factory with a Diverse
Multigenerational Toolset 351
David W. Brindza, Travis A. Abshere, TriQuint Semiconductor
1:40 PM 1lb.2 Factory Automation for Overall Fab Efficiency 355
Nirav Thakkar, Skyworks Solutions
2:00 PM llb.3 Optimizing Staff Levels Using Linear Programming 359
Marino Arturo andAriel Meyuhas, MAXI.E.G.
2:20 PM llb.4 Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications ..363
Tertius Rivers, Corey Nevers, Chi-hing Choi, Hui Liu, TriQuint Semiconductor
2:40 PM llb.5 Combining Visual Inspection and Bare Die Packaging for High Volume Manufacturing369
Chang'e Weng and Thorsten Saeger, TriQuint Semiconductor
SESSION 12: POSTER SESSION
Chairs: Kelli Rivers, Materion, Corey Nevers, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS
3:00 PM 12.1 How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds -
- 4:00 PM Through Automation 375
Susie Ross, Tin Ko, Jianli Fu, Hongxiao Shao, Skyworks Solutions, Inc.
Student Presentation
12.2 Yield Improvement in Fabrication of Edge Emitting Transistor Lasers by Optimized BCBPlanarization 379
Rohan Bambery and Milton Feng, University ofIllinois at Urbana-Champaign
12.3 Development of PVD-A1N Buffer Process for GaN-on-Si 383
Frank Cerio, Arindom Datta, Adrian Devasahayam, Boris Druz, Veeco Instruments
Student Presentation
12.4 GaN MOSHEMT Using Sputtered-Gate-Si02 and Post-Annealing Treatment 387
Liang Pang1, Yaguang Lian', Dong-Seok Kim2, Jung-Hee Lee2, and Kyekyoon Kim1, 'University ofIllinois at Urbana-Champaign, 2Kyungpook National University, Korea
12.5 Process-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs391
A. Christou, University ofMaryland
12.6 Formation of slanted Gates for GaN-based HEMTs by Combined Plasma and Wet
Chemical Etching of Silicon Nitride 395
A. Thies, N. Kemf, S.A. Chevtchenko, and O. Kriiger, Ferdinand-Braun-Institut-Berlin
12.7 Deposition Control During GaN MOVPE 399
D. Fahle', T. Kriicken2, M. Dauelsberg2, R. Schreiner2, H. Kalisch', M. Heuken12 and A. Vescan1,'RWTHAachen University, 2ALXTRON SE
xxvi CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA
12.8 Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS
and More-than-Moore Applications 403
T. Uhrmann, T. Matthias, T. Glinsner, V. Dragoi, T. Plach, E. Pabo, M. Wimplinger and P. Lindner,EV Group
Student Presentation
12.9 Methods ofImproving GaN-Based LED Luminous Efficiency 407
Liang-Yu Su and JianJang Huang, National Taiwan University
Student Presentation
12.10 Current Gain Enhancement of Light-Emitting Transistors Under Different
Ambient Temperatures 411
Wen-Chung Tu and Chao-Hsin Wu, National Taiwan University
12.11 BCB Encapsulation for High Power AlGaN/GaN-HFET Technology 415
P. Kurpas, O. Bengtsson, S. A. Chevtchenko, I. Ostermay, R. Zhytnytska, W. Heinrich, J. Wiirfl,Ferdinand-Braun-Institut-Berlin
12.12 Recent Developments in Real-Time Thickness Control ofPlasma Deposited Thin Film
Dielectrics Using Optical Emission Interferometry 419
Kenneth D. Mackenzie, David J. Johnson, Christopher W. Johnson, and Linnell Martinez, Plasma-
Therm, LLC
12.13 Reducing Defects Using a 5x Stepper in Pattering 80 fim SU8 on MEMS Devices 423
Jean-Franqois Bedard, Jan Campbell, Martin Ivie, Elda Clarke and Gary Head, TriQuintSemiconductor
12.14 Back to the Future: How Implementing Retro-Style Processing Can be
an Improvement 427
Martin Ivie, Jan Campbell, Qizhi He, TriQuint Semiconductor
Student Presentation
12.15 Growth and Characterization of Band Gap Engineered InGaAs/InAlAs/GaAs HighElectron-Mobility Quantum Well Structure Towards Low Leakage VLSI Applications 431
U. P. Gomes', Y. Chen2, Y.KYadav1, S. Ghosh', S. Chowdhury', P. Mukhopadhyay', P. Chow2 and D.
Biswas', 'Indian Institute of Technology Kharagpur, 2SVTAssociates
12.16 Developing a Fundamental Understanding of Gold Spitting During Evaporation 435
Alan Duckham', Lawrence Luke2, Robert Sprague ,'Materion Microelectronics & Services, 2Materion
Barr Precision Optics & Thin Film Coatings
12.17 Power Output of Multijunction Solar Cell Wafers 439
Onur Fidaner and Michael W. Wiemer, Solar Junction Corporation
12.18 Integrating a Control Plan Methodology into an MES System to Enhance Ease of
Process Control 443
Lesley Cheema, Jason Welter, Nicolas Awad, TriQuint Semiconductor
Author Index 447
Acronyms, Abbreviations, and Chemical Names 453
CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxvii