Post on 31-Dec-2015
description
Ion implanter – HV terminal 500 kVa number of Nielsen and RF ion sources for gaseous and solid materialsmass analysis better than 1 a.m.u.beam current from 1-100 A, beam scanning systemtarget area up to 5 cm diameter
2MV Van de Graaff ion acceleratorRF source for light ions - H, He and their isotopesRBS – beam line in preparation
UHV chamber for thin film depositione-beam or thermal evaporation
Dual ion miller for TEM specimen preparation
Thin film coating unitfor SEM sample preparation
TEM – Philips EM400
120 keV
TEM – Philips EM400T
120 keV
SEM – Philips EM500
Oxford Instruments EDAX
SEM – JEOL 25N with EPMA (e-microprobe)
ANA
HV thin film deposition unit
with dual ion beams
EMA 10 – UHV system
Surface analysis - LEIS i SIMS
(low energy ion
scattering and
Secondary ion
mass spectroscopy)
Balzers SPUTTRON II thin film deposition system
d.c. and r.f. sputtering, four target elements, raective deposition
Balzers BAK 550 evaporation system
e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation
Talistep – thin film thickness and surface roughness measurements