Introduction to Microscopy · achieve high resolution microscopy. →The introduction of electron...

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Introduction to Microscopy

Boonrat Lohwongwatana

boonrat@gmail.com

http://ows.public.sembach.af.mil/index.cfm

“Avoiding stereological bias inherent to the

appearance of 3-D objects on 2-D sections is

essential for the estimation of total object

number in a defined reference space.

Recognition and avoidance of these sources of

bias requires a thorough understanding of bias

introduced by assumptions, models, and

correction factors. The goal of unbiased

sampling and assumption-free stereology

designs to estimate number is to overcome this

and other sources of systematic error that can

introduce systematic error into sample

estimates.”

However, good stereology is efficient stereology.

Over-sampling beyond the point of diminishing

returns it is not good use of resources. As noted

by the esteemed Swiss stereologist, Professor

Ewald Weibel, the most rational approach is:

Do More Less Well. That is, optimize sampling

to achieve stable estimates with minimal time,

effort, and resources.

Unbiased Stereology

• Systematic error / stereological error

“Blind” Structural Characterization

SPM (Scanning Probe Microscopy):

1. STM (Scanning Tunneling Microscopy)

2. AFM (Atomic Force Microscopy)

Surface imaging technique

+

Nanoindentation

http://en.wikipedia.org/wiki/Image:ScanningTunnelingMicroscope_schematic.png

STM

STM

• Developed in 1981-1982 by Binnig and Rohrer

• Based on electron tunneling (QM)

• Extremely sharp tip (PtIr) on Piezoelectrics

AFM

• Modification of STM for not only

electronically conductive materials.

• Measures:

– Van der Waals

– Capillary

– Chemical bonding

– Electrostatic

– Magnetic

http://en.wikipedia.org/wiki/Image:Atomic_force_microscope_block_diagram.png

MORE AFM

Operating Modes

Contact Non-contact Tapping

http://www.mechmat.caltech.edu/~kaushik/

Gerber and Lang, Nature

Nanotechnology 1, 3 - 5 (2006)

Un dimanche après-midi à l’Ile de la Grande Jatte

Resolution

• Airy Disc and Rings

• Concept of resolution and depth of field

• Optical vs Electrons

www.aguntherphotography.com/files/tutorial/diffraction/

www.aguntherphotography.com/files/tutorial/diffraction/

Rayleigh Criterion for resolution

Resolution (nm) = d1 / 2 = 0.61λ / μ sinα

http://www.seemsartless.com/guides/camera-dof.php

http://photography.about.com/od/takingpictures/ss/DOF_2.htm

Taken from J.I. Goldstein et al., eds., Scanning Electron Microscopy

and X-Ray Microanalysis, (Plenum Press,NY,1980).

SE images afford improved depth of focusOptical Image SEM Image

Tip of a screw(Brundle)

Erythrocytes(Flegler)

Optical Image SEM Image

Rayleigh Criterion for resolution

Resolution (nm) = d1 / 2 = 0.61λ / μ sinα

Depth of Field (nm) = Res/tan α

There is the need for smaller wavelength to

achieve high resolution microscopy.

→ The introduction of electron microscopes

Electron Gun

Thermionic emission Field emissionElectrons can be emitted

from a filament (emitter or

cathode) by gaining

additional energy from heat

or electric field.

Commonly used emitters:

Tungsten wire

LaB6 filament

Field emitter.

The common properties of

the emitters are low work

function, high melting point,

and high mechanical

strength W wire LaB6

Field emitter

TEM Sample Preparations

• Specimen must be thin enough to transmit sufficient

electrons to form an image (100 nm)

• It should be stable under electron bombardment in a high

vacuum

• Must fit the specimen holder (i.e. < 3 mm in diameter)

• Ideally, specimen preparation should not alter the

structure of the specimen at a level observable with the

microscope

• Always research (i.e. literature search) the different

methods appropriate for your sample prep first

TEM Specimen PreparationSpecimen Requirements

• 3 mm diameter (Nom. 3.05 mm) grids used for non self-supporting specimens

• Specialized grids include:

− Bar grids

− Mixed bar grids

− Folding grids (Oyster grids)

− Slot grids

− Hexagonal grids

− Finder grids

− Support films (i.e. C or Holey C, Silicon Monoxide, etc.)

• Mesh is designated in divisions per inch (50 – 2000)

• Materials vary from copper and nickel to esoteric selections (Ti, Pt, Au, Ag etc.) based on various demands

TEM Grids

TEM Specimen Preparation

Cut into slicesCore into 3 mm disk and

polish to about 100 mm thickGlue to a metal

support ring

Make a dimple(~ 10 mm in the center)

Ion mill to make thin (< 0.1mm) area or hole

Ar +

• Usually used for polymers, polymer

matrix composites, various particles

embedded in epoxy resin, etc.

• Automated high precision cutting

machine using glass or diamond

knives capable of cutting specimens

as thin as 10 nm

TEM Specimen Preparation

Ultramicrotomy

F. Shaapur, “An Introduction to Basic Specimen Preparation Techniques for Electron Microscopy of

Materials”, Arizona State University, (1997) http://www.asu.edu.class/csss

Ultramicrotomy

TEM Specimen Preparation

• Specimen arm holds and slices a sample with a tapered end (to reduce the cutting cross-section) by lowering it against the sharp edge of the knife

• Cutting strokes combined with simultaneous feeding of the sample toward the cutting edge produce ultra-thin sections

Glass Knife Boat

• Sections of material are

collected on the surface of

a trough filled with liquid

(usually water)

• Sections lifted off onto

TEM grids which provide

support

• Cryo-Ultramicrotomy:

Freeze materials (i.e. for

rubbery elastic

materials,etc.) with lN2 to

below glass transition

temperature to make hard

enough to cut

Glass Knives

http://www.emsdiasum.com/Diatome/knife/images/

Caring for diamond knives:

http://www.emsdiasum.com/Diatome/

diamond_knives/manual.htm

Diamond Knives

• Much harder than glass

• Costs in the range of

$1,500-$3000

• Final angle of the knive

can vary between 35-60°

− Smaller angled

knives capable of

cutting thinner

sections of soft

material

− Larger angled knives

suitable for cutting

harder specimens

but not as sharp

• Cutting edge is extremely

thin (~ several atoms or a

few nm) and easily

susceptible to damage

• Very similar to (SEM)

– Uses ions instead of electrons

– Field emission of Liquid Metal Ion

Source (LMIS)

– Usually Ga or In source

– Rasters across sample

– 5-30 keV Beam Energy

– 1 pA to 20 nA

– 10-500 nm spot size

• FIB can be used to image, etch, deposit,

and ion implant site specifically

Focused Ion Beam

FIB Schematic

• Sample diced or polished to 50 mm or less

• Mounted on TEM slot or U-shaped grid

• FIB or gas assisted FIB (GAE) etched on both sides until region of interest

is thin

A. Yamaguchi and T. Nishikawa, J. Vac. Sci. Technol. B 13(3), 962-966 (1995).

TEM Specimen Prep with FIB

Trench Technique

A. Yamaguchi and T. Nishikawa, J. Vac. Sci. Technol. B 13(3), 962-966 (1995).

• Low magnification bright-field

TEM of InP prepared by

conventional FIB

Low Mag. TEM of InP

TEM Specimen Prep with FIB

http://www.amerinc.com/html/sample_preparation.html

TEM Specimen Prep with FIB

FIB Image of IC Sample

Basic TEM Imaging

HRTEM image of single crystals of (Ce0.5Zr0.5)O2, prepared by high-temperature flame spray synthesis.

Image from website of Dr. Frank Krumeich, ETH Zürich, Switzerland

HRTEM image of an Ag particle supported on ZnO.

Image from website of Dr. Frank Krumeich, ETH Zürich, Switzerland

Electron Diffraction

(ED)

High-Resolution

Transmission Electron

Microscopy

(HR-TEM)

Bright- and Dark-Field Imaging

(BF/DF imaging)

• Crystallographic Info• Internal ultrastructure

• Nanostructure dispersion

• Defect identification

• Interface structure

• Defect structureEnergy-Dispersive

X-ray Spectrometry

(EDS)

• Elemental composition,

mapping and linescans

• Chemical composition

• Other Bonding info

Electron Energy Loss

Spectroscopy

(EELS)

TEM Capabilities

Transmission Electron

Microscope

(TEM)

Bright field imaging

http://www.microscopy.ethz.ch/TEM_BF.htm

Bright field imaging

http://www.microscopy.ethz.ch/TEM_BF.htm

Contrast mechanism

Mass and thickness contrast 3

Contrast mechanism Diffraction contrast 7

Contrast mechanism

Diffraction contrast 8

Contrast mechanism

Diffraction contrast 9

Contrast mechanism

Diffraction contrast 11

• Line defect

Moire Fringes

Check out animation at:

http://www.matter.org.uk/tem/dark_field.htm

BF and DF

images of ZrO2

http://www.microscopy.ethz.c

h/BFDF-TEM.htm

EpilayerTwins

Meletis et al, 2008.

Double-layered Nanostructure of Ba(Zr,Ti)O3 Epilayer

[100]

[010]

[001]

(111)

(111)-

(111)- -

(111)-

Epilayer

Twin-1

Twin-2

Twin-3

Twin-4

MgO

a1b1

c1

a2

b2

c2

a3

b3

c3

a4

b4

c4

[100]

[010]

[001]

(111)

(111)-(111)-

(111)- -(111)- -

(111)-

(111)-

Epilayer

Twin-1

Twin-2

Twin-3

Twin-4

Epilayer

Twin-1

Twin-2

Twin-3

Twin-4

MgOMgO

a1b1

c1

a1b1

c1

a2

b2

c2

a2

b2

c2

a3

b3

c3

a4

b4

c4

a4

b4

c4

Epitaxial Ba(Zr,Ti)O3 film

William and Carter

STEM and

Annular

Darkfield

Ul-Hamid, 2004.

Chui et al, Nanotechnology 2006.

SEM Imaging

Al2O3/Ni composite

Courtesy of Prof. T. Sekino, ISIR, Osaka Univ.

BSE SE

Backscattered electron (BSE) image Secondary electron (SE) image

Al2O3/Ni composite

X-ray Energy Dispersive Spectroscopy

(EDS) in SEM

EDS spectrum: Characteristic X-ray peaks on continuum bk

http://www.geosci.ipfw.edu/cgi-bin/sem/techinfo.cgi?choice=xmap EDS elemental maps

RGB

Secondary effects 2

Interaction volume

• Interaction volume is the region that electrons penetrate into the

specimen which depends on

– Atomic number,

– Accelerated voltage,

– Tilted angle

– and so on.

Interaction volume 2

Carbon Iron Uranium

Effect of atomic number

Effect of accelerated voltage

Interaction volume 3

10 keV

20 keV

30 keV

Interaction volume 4Effect of tilted angle

0o tilt

60o tilt

45o tilt

Summary: Signals in EM

TEM

Bright field, Dark field,

Electron Diffraction* and

Energy dispersive- x-ray.

SEM

Secondary e, Back-scattered e, EDX

and Electron back-scattered diffraction