Post on 25-Mar-2021
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 1
EXCITE, the MEDEA+ Extreme UV Consortium for Imaging Technology
Peter Zandbergen*, Philips Research LeuvenWolf-Dieter Domke, InfineonPietro Cantú, STMicroelectronicsPhilippe Thony, STMicroelectronicsSergei Postnikov, FreescaleJean-Yves Robic, CEA-Leti
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 2
Presentation Outline
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 3
A few words about MEDEA+
MEDEA+ is the industry-driven pan-European programme for advanced co-operative R&D in microelectronics to ensure Europe's technological and industrial competitiveness in this sector on a worldwide basis.
Project selection criteria amongst others include: – Innovation in basic and industrial research
– Competences of the partners
– Strengths of the consortium ("team effect")
Projects are targeting either “Applications (A)” or “Technology (T)”– Note: T406 EXCITE is part of the MEDEA+ EUVL Cluster
www.medeaplus.orgwww.medeaplus.org
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 4
EXCITE in the MEDEA+ EUVL Cluster
EXTATICAlpha Demo tool
EXTATICAlpha Demo tool
EXCITEEUV
ImagingTechnology
Users
EXCITEEUV
ImagingTechnology
Users
EUV SourceEUV Source
EXTUMASKMasks
EXTUMASKMasks
See Rob Hartman’s EU Regional Update tomorrow at 08:00AM for a more complete picture on European EUVL programs
See Rob Hartman’s EU Regional Update tomorrow at 08:00AM for a more complete picture on European EUVL programs
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 5
EUVL Critical Issues
Critical issues from EUVL Symposium Nov. 2004
1.Availability defect free masks2.Source components and collector optics lifetime3.Resist resolution, sensitivity and LER
Other: Reticle protection during storage, handling and useSource PowerProjector and illuminator optics quality and lifetime
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 6
Presentation Outline
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 7
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 8
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
Countries involved:
• Belgium
• France
• Germany
• Italy
• Netherlands
• Switzerland
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* * **
*
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 9
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
The EXCITE project aims at developing Extreme Ultra-Violet (EUV) imaging capability for the 45nm technology node and beyond
Approach is to address bottlenecks related to EUV lithography imaging for implementing full-field patterning development
Three year program, ending Dec 31, 2005
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 10
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
T406 EXCITE T406 EXCITE EXCITE T406Metrology
EXCITE T406Metrology
EXCITE T406EUV Resist Technology
EXCITE T406EUV Resist Technology
EXCITE T406EUV Mask Technology
EXCITE T406EUV Mask Technology
EXCITE T406EUV Litho CellEXCITE T406
EUV Litho Cell
EXCITE T406Modelling
EXCITE T406Modelling
IEUVIResist TWG
IEUVIResist TWG
SEMATECHResist GroupSEMATECH
Resist Group
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 11
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
T406 EXCITE T406 EXCITE EXCITE T406Metrology
EXCITE T406Metrology
EXCITE T406EUV Resist Technology
EXCITE T406EUV Resist Technology
EXCITE T406EUV Mask Technology
EXCITE T406EUV Mask Technology
EXCITE T406EUV Litho CellEXCITE T406
EUV Litho Cell
EXCITE T406Modelling
EXCITE T406Modelling
IEUVIResist TWG
IEUVIResist TWG
SEMATECHResist GroupSEMATECH
Resist Group
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 12
Presentation Outline
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
Example 1: Resist Limits Triangle
Example 2: Tool vs. Resist Limits
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 13
30nm L/S
Highlights – Resist LimitsTwo key issues addressed
Trade-off Resolution, LER and Dose Tool or resist limits?
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 14
30nm L/S
Tool or resist limits?
Highlights – Resist LimitsTwo key issues addressed
Trade-off Resolution, LER and Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 15
Trade-off LER vs. sensitivity
0
3
6
9
12
15
18
0.1 0.2 0.3 0.4 0.5 0.6
(Dose-to-size )-1/2
LER
3σ
(nm
)
Shot noise statisticsImpact on LER
25mJ 11mJ 6mJ 4mJ
Throughput increase
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
LER increase
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 16
Importance of acid diffusion in CA Resist
Acid diffusion in Chemically Amplified Resists (CAR)
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Much edge smearing => LERLittle edge smearing => LER
Large volume => low doseSmall volume => high dose
Large smearing => resolutionLittle smearing => resolution
Lower contrast => Exp. Lat.Keep contrast => Exp. Lat.
HIGH diffusion lengthLOW diffusion length
Much edge smearing => LERLittle edge smearing => LER
Large volume => low doseSmall volume => high dose
Large smearing => resolutionLittle smearing => resolution
Lower contrast => Exp. Lat.Keep contrast => Exp. Lat.
HIGH diffusion lengthLOW diffusion length
Much edge smearing => LERLittle edge smearing => LER
Large volume => low doseSmall volume => high dose
Large smearing => resolutionLittle smearing => resolution
Lower contrast => Exp. Lat.Keep contrast => Exp. Lat.
HIGH diffusion lengthLOW diffusion length
Much edge smearing => LERLittle edge smearing => LER
Large volume => low doseSmall volume => high dose
Large smearing => resolutionLittle smearing => resolution
Lower contrast => Exp. Lat.Keep contrast => Exp. Lat.
HIGH diffusion lengthLOW diffusion length
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 17
Relationship EL – Diffusion Length Ld
Measured contrast (EL) divided by NILS - to filter out differences in optical contrast - is used to quantify the impact of acid diffusion on contrast
Acid diffusion causes a significant drop in chemical contrast as acid diffusion length Ld increases relative to pitch
Data is well described by in-house developed theoretical curve. Note: no free parameters
⎥⎥⎦
⎤
⎢⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛−−= 2
2
2
2 4exp1
4 pDt
DtpMTF f
fdiff
ππ
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
L d /pitch
EL(%
) / N
ILS
ArF - 160nm HPArF - 120nm HPArF - 80nm HPEUV - 50nm HPTheory
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 18
Relationship LER – Diffusion Length Ld
Two distinct regions visible:• Ld / pitch < 0.33: improvement of
deprotection statistics due to acid diffusion prevails, reducing overall line edge roughness
• Ld / pitch > 0.33: chemical contrast drop due to diffusion takes the lead and causes LER to increase
Scaling of LER with Ld:
⎟⎠⎞⎜
⎝⎛⎟
⎠⎞⎜
⎝⎛∝ p
LMTFLLER ddiff
ddosecorr
2/3
_1
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
2
4
6
8
10
12
0.1 0.2 0.3 0.4 0.5 0.6 0.7
L d / pitch
LER
corr
_dos
e (n
m)
EUV (E-N) - 50nm HP
EUV (A-D) - 50nm HP
ArF - 100nm HP
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 19
Resist Limits Triangle
Acid diffusion is an important resist process parameter to tune crucial lithographic process characteristics
– EL was altered by factor of 4
– LER changed by 40%
Scaling of EL and LER with diffusion length was successfully described by two validated formulas
For a given dose, EL and LER cannot be optimized simultaneously– e.g. Optimum diffusion length for LER reduction is one third of the
pitch, EL then drops to 40% of best achievable
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 20
Highlights – Resist LimitsTwo key issues addressed
Trade-off Resolution, LER and Dose Tool or resist limits?
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose 30nm L/S
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 21
Highlights – Resist LimitsTwo key issues addressed
Trade-off Resolution, LER and Dose Tool or resist limits?
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Shot Noise
Acid
Diff
usio
n
Acid Diffusion
Resolution LER
Dose 30nm L/S
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 22
50 nm half pitch 45 nm 40 nm
32.5 nm 30 nm
EUV-IL Results PMMA (non-CA Resist)Exposed at PSI Switzerland
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 23
EUV-IL Results PMMA (non-CA Resist)Exposed at PSI Switzerland
50 nm half pitch 45 nm 40 nm
35 nm 30 nm
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 24
30nm L/S EUV-IL imagingComparison PMMA vs. Chemically Amplified Resist
PMMANon-CA Resist
State of the artCA Resist
30nm L/S 30nm L/S
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 25
Higher Resolution L/S Patterns in PMMA25 nm 21.25 nm
17.5 nm 15 nm
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 26
Higher Resolution L/S Patterns in PMMA25 nm 21.25 nm
17.5 nm 15 nm
Good imaging down to 18nm L/S with non-CA Resist
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 27
Resolution Contact Holes
42nm 35nm35nm
PMMA CAR
• 35nm HP contact holes nicely image in PMMA• 42nm HP contact holes is at the limit of CAR capabilities;
smallest holes in CAR reported
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 28
Importance of PMMA imaging results
… is NOT in the fact that PMMA should be considered a serious resist candidate– Exposure doses are too high (well above 100 mJ/cm2)
– Serious concern about outgassing
… is in determining whether imaging systems or resists are limiting factor– L/S and contact hole results indicate CA Resists are limiting
Note: MET and PSI-IL data correlate well for resist screening
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 29
Importance of PMMA imaging results
… is NOT in the fact that PMMA should be considered a serious resist candidate– Exposure doses are too high (well above 100 mJ/cm2)
– Serious concern about outgassing
… is in determining whether imaging systems or resists are limiting factor– L/S and contact hole results indicate CA Resists are limiting
Note: MET and PSI-IL data correlate well for resist screening
Tuesday Nov. 8 at 08:40AM
“Microstepper vs. interference EUV lithography… “
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 30
Other project highlights and activities not presented here
Resist Outgassing
Resist Screening
Flare and CD control
CD, LER and Profile metrology
…
Other EXCITE related papers at this conference:– Nov. 8 at 08:00 AM: “EU Regional Update” (ASML)
– Nov. 8 at 08:40 AM: “Microstepper vs. Interference EUV litho…” (IMEC et al.)
– Poster 1-RE-02: “EUV Process Modeling” (Freescale et al.)
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 31
Presentation Outline
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
EXCITE and MEDEA+
Project Introduction
Project Highlights
Summary and Outlook
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 32
Understanding and optimization of resolution limits of Chemically Amplified Resists (Photospeed, LER and Resolution) will be key for implementation of EUVL at 32nm and beyond
Current CAR imaging is limited by the resists, not the tools
Understanding of safe levels of resist outgassing is needed for chemical platform selection
Flare is an important driver for process windows and LER
Dissemination of project outcome has supported driving critical issues– Active cooperation in international working groups like Sematech, I-TWG,
European resist workshop, …
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 33
Acknowledgments:
SEMATECH for the fruitful cooperation on Resist Technology
IEUVI TWG Resist for the global network to align issues
IST More Moore project partners for fruitful discussions
EXCITE Project Partners for their inspiration and transpiration
MEDEA+ and local governments for their support
Acknowledgments:
SEMATECH for the fruitful cooperation on Resist Technology
IEUVI TWG Resist for the global network to align issues
IST More Moore project partners for fruitful discussions
EXCITE Project Partners for their inspiration and transpiration
MEDEA+ and local governments for their support
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406
2005 EUVL Symposium San Diego, CA USA
EXCITE: Extreme UV Consortium for Imaging Technology page 34
EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406