Post on 27-Oct-2019
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
Device Description AIDA-2020 Run 11748
M. Carulla, A. Doblas, D. Flores, S. Hidalgo,
A. Merlos, G. Pellegrini, D. Quirion, I. VilaCentro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona, Spain
Instituto de Física de Cantabria, IFCA-UC-CSIC, Santander, Spain
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
4’’ Thin LGAD 4 AIDA2020 (35-50 µm thick Si-Si)
o Run 11748. AIDA2020 14 Si-Si 4” wafers (35-50 µm
High-Res) 9 Mask Levels (CNM913) JTE all structures (5, 10, 15 µm
width) 37, 47, 57 µm Inter-Pad Gap Boron multiplication layer 100 Fabrication Steps An open window in the top metal
layer for Laser characterization (100x100 µm2)
Temporary metal layer for matrix devices electrical characterization (shorting all pixels)
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
LGAD 4 AIDA2020. Fabrication Processes Status
o LGADs for ATLAS and CMS Timing Layers. AIDA2020. Run 11748 We use three different implantation dose values for the
multiplication area (2,3,8,9 low; 4,5,10,11 medium; 6,7,13,14 high)
Wafers 3,5,7 are 35 µm thick. Wafers 9,11,14 are 50 µm thick Wafers 3,5,7,9,11,14 do not use temporary metal and they will
be tested on-wafer using some single pad devices to evaluate the fabrication process quality
We will only use temporary metal on wafers 1,2,4,6,8,10,12,13 All wafers will be provided diced We are using the same mask set (CNM913) for 6 Dummy
Wafers. This fabrication process (Run 12119) uses 6 wafers with metal layer only
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
4’’ Thin LGAD 4 AIDA2020 (Run 11748)
ALTIROC0 2x2 matrix for first version of readout chip ALTIROC1 5x5 matrix SINGLE DIODE PAD (1x1 and 1.3x1.3 mm2) UBM opening for bumps
Passivation opening of 90 μm Large opening for wire-bond + probe
200 x 100 μm2
An open window in the top metal layer for Laser characterization 100 x 100 μm2
33 µm
JTE
33 µm 300 µm1.0 x 1.0 mm²1.3 x 1.3 mm²
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
Wafers Diced 3, 5, 7, 9, 11, 14 35 µm 3, 5, 7 Low 3, 9
50 µm 9, 11, 14 Med 5, 11
High 7, 14
Devices/Wafer
Inter-Pad Gap ATLAS 5X5 ATLAS 2X2 1.3 ATLAS 2X2 1.0 LGAD 1.3 LGAD 1.0 PiN 1.3 PiN 1.0
X_37 6 16 9 10 18 2 2
X_47 8 18 9 14 16 4 3
X_57 8 18 8 16 18 2 3
Total 22 52 26 40 52 8 8
Diced 11 26 14 40 52 8 8
UBM 11 26 12
Samples Delivered
Laboratory Device Type W5 W11
IFCA
LGAD 1.0 26 26
LGAD 1.3 9 9
PiN 1.0 7 8
PiN 1.3 6 6
IFAE
ATLAS 2x2 1.3 5
X_37 3
X_47 2
LGAD 1.3 3 3
Joern (from IFCA)LGAD 1.3 9 9
PiN 1.3 2 2
6 Wafers Diced: 3, 5, 7, 9, 11, 14 3 Wafers 35 µm thick: 3, 5, 7 3 Wafers 50 µm thick: 9, 11, 14 3 Gain Layer Implantation Doses: Low,
Med, High 3 Inter-Pad Gaps: 37, 47, 57 µm ATLAS Modules: 50 % Diced, 50 % UBM Some samples delivered to IFAE, IFCA
and Joern (from IFCA)
4’’ Thin LGAD 4 AIDA2020 (Run 11748)
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
Preliminary Results
Wafer Dose Thickhness (µm)
3,9 Low 35,50
5,11 Medium 35,50
7,14 High 35,50
1,75 1,80 1,85 1,90100
120
140
160
180
200
220
240
260
280
DA33_35um
DA33_50um
DB31_35um
DB31_50um
Bre
akd
ow
n v
olt
ag
e (
V)
Pwell Dose (x1012 cm-2)
Run11748 Lgad 4" AIDA2020
W3
W5
W7
W9
W11
W14
Low Medium High
4’’ Thin LGAD 4 AIDA2020 (Run 11748)
Vidyo CERN. 29-10-2018
Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona
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IMB-CNM Activities for ATLAS & CMS Timing Layers
4’’ Thin LGAD 4 AIDA2020 (Run 11748)