Post on 03-Oct-2015
description
IKW75N60T TrenchStop Series q
Power Semiconductors 1 Rev. 2.4 May 06
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: Frequency Converters Uninterrupted Power Supply Type VCE IC VCE(sat),Tj=25C Tj,max Marking Package
IKW75N60T 600V 75A 1.5V 175C K75T60 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VC E 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C
IC 802) 75
Pulsed collector current, tp limited by Tjmax IC p u l s 225 Turn off safe operating area (VCE 600V, Tj 175C) - 225 Diode forward current, limited by Tjmax TC = 25C TC = 100C
IF 802)
75
Diode pulsed current, tp limited by Tjmax IF p u l s 225
A
Gate-emitter voltage VG E 20 V Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C tS C 5 s
Power dissipation TC = 25C P t o t 428 W Operating junction temperature T j -40...+175 Storage temperature T s t g -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
C
1) J-STD-020 and JESD-022 2) Value limited by bondwire 3) Allowed number of short circuits: 1s.
G
C
E
PG-TO-247-3-21
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 2 Rev. 2.4 May 06
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic IGBT thermal resistance, junction case
R t h J C 0.35
Diode thermal resistance, junction case
R t h J C D 0.6
Thermal resistance, junction ambient
R t h J A 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Value Parameter Symbol Conditions
min. Typ. max. Unit
Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.2mA 600 - - Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=75A
T j=25C T j=175C
- -
1.5 1.9
2.0 -
Diode forward voltage
VF VG E=0V, IF=75A T j=25C T j=175C
- -
1.65 1.6
2.0 -
Gate-emitter threshold voltage VG E ( t h ) IC=1.2mA,VC E=VG E 4.1 4.9 5.7
V
Zero gate voltage collector current
IC E S VC E=600V, VG E=0V T j=25C T j=175C
- -
- -
40 1000
A
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA Transconductance g f s VC E=20V, IC=75A - 41 - S Integrated gate resistor RG i n t - Dynamic Characteristic Input capacitance C i s s - 4620 - Output capacitance Co s s - 288 - Reverse transfer capacitance C r s s
VC E=25V, VG E=0V, f=1MHz - 137 -
pF
Gate charge QG a t e VC C=480V, IC=75AVG E=15V
- 470 - nC
Internal emitter inductance measured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC ( S C ) VG E=15V, tS C5s VC C = 400V, T j 150C
- 687.5 - A
1) Allowed number of short circuits: 1s.
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 3 Rev. 2.4 May 06
Switching Characteristic, Inductive Load, at Tj=25 C
Value Parameter Symbol Conditions
min. typ. max. Unit
IGBT Characteristic Turn-on delay time td ( o n ) - 33 - Rise time t r - 36 - Turn-off delay time td ( o f f ) - 330 - Fall time t f - 35 -
ns
Turn-on energy Eo n - 2.0 - Turn-off energy Eo f f - 2.5 - Total switching energy E t s
T j=25C, VC C=400V, IC=75A,VG E=0/15V, RG=5 , L 1 )=100nH, C 1 )=39pF Energy losses include tail and diode reverse recovery. - 4.5 -
mJ
Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 121 - ns Diode reverse recovery charge Q r r - 2.4 - C Diode peak reverse recovery current I r r m - 38.5 - A Diode peak rate of fall of reverse recovery current during tb
di r r /d t
T j=25C, VR=400V, IF=75A, diF /d t=1460A/s
- 921 - A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Value Parameter Symbol Conditions
min. typ. max. Unit
IGBT Characteristic Turn-on delay time td ( o n ) - 32 - Rise time t r - 37 - Turn-off delay time td ( o f f ) - 363 - Fall time t f - 38 -
ns
Turn-on energy Eo n - 2.9 - Turn-off energy Eo f f - 2.9 - Total switching energy E t s
T j=175C, VC C=400V, IC=75A,VG E=0/15V, RG= 5 L 1 )=100nH, C 1 )=39pF Energy losses include tail and diode reverse recovery. - 5.8 -
mJ
Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 182 - ns Diode reverse recovery charge Q r r - 5.8 - C Diode peak reverse recovery current I r r m - 56.2 - A Diode peak rate of fall of reverse recovery current during tb
di r r /d t
T j=175C VR=400V, IF=75A, diF /d t=1460A/s
- 1013 - A/s
1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 4 Rev. 2.4 May 06
I C, C
OLL
EC
TOR
CU
RR
EN
T
10Hz 100Hz 1kHz 10kHz 100kHz0A
50A
100A
150A
200A
TC=110C
TC=80C
I C, C
OLL
EC
TOR
CU
RR
EN
T 1V 10V 100V 1000V
1A
10A
100A10s
50s
1ms
DC
tp=1s
10ms
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of
switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5)
Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
P tot, P
OW
ER
DIS
SIPA
TIO
N
25C 50C 75C 100C 125C 150C0W
50W
100W
150W
200W
250W
300W
350W
400W
I C, C
OLL
EC
TOR
CU
RR
EN
T
25C 75C 125C0A
30A
60A
90A
120A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of
case temperature (Tj 175C)
Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
Ic
Ic
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 5 Rev. 2.4 May 06
I C, C
OLL
EC
TOR
CU
RR
EN
T
0V 1V 2V 3V0A
30A
60A
90A
120A
15V
7V
9V
11V
13V
VGE=20V
I C, C
OLL
EC
TOR
CU
RR
EN
T
0V 1V 2V 3V0A
30A
60A
90A
120A
15V
7V
9V
11V
13V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic
(Tj = 25C) Figure 6. Typical output characteristic
(Tj = 175C)
I C, C
OLL
EC
TOR
CU
RR
EN
T
0V 2V 4V 6V 8V0A
20A
40A
60A
80A
25C
T J=175C
V CE(
sat),
CO
LLE
CTO
R-E
MIT
T S
ATU
RA
TIO
N V
OLT
AG
E
0C 50C 100C 150C0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
IC=75A
IC=150A
IC=37.5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE Figure 7. Typical transfer characteristic
(VCE=20V) Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (VGE = 15V)
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 6 Rev. 2.4 May 06
t, S
WIT
CH
ING
TIM
ES
0A 40A 80A 120A10ns
100ns
t r
td(on)
t f
td(off)
t, S
WIT
CH
ING
TIM
ES
5 10 1510ns
100ns
t r
td(on)
t f
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)
t, S
WIT
CH
ING
TIM
ES
25C 50C 75C 100C 125C 150C
100ns
t r
td(on)
t f
td(off)
V GE(
th),
GA
TE-E
MIT
T TR
SH
OLD
VO
LTAG
E
-50C 0C 50C 100C 150C0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=5, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA)
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 7 Rev. 2.4 May 06
E, S
WIT
CH
ING
EN
ER
GY
LO
SSE
S
0A 20A 40A 60A 80A 100A 120A 140A0.0mJ
4.0mJ
8.0mJ
12.0mJ
Ets*
Eoff
*) Eon and Ets include losses due to diode recovery
Eon*
E, S
WIT
CH
ING
EN
ER
GY
LO
SSE
S
0 5 10 150.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ E ts*
E off
*) E on and E ts include losses
due to diode recovery
E on*
IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses
as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)
E, S
WIT
CH
ING
EN
ER
GY
LO
SSE
S
25C 50C 75C 100C 125C 150C0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJEts*
Eoff
*) Eon and Ets include losses due to diode recovery
Eon*
E, S
WIT
CH
ING
EN
ER
GY
LO
SSE
S
300V 350V 400V 450V 500V 550V0mJ
2mJ
4mJ
6mJ
8mJ
E ts*
Eon*
*) E on and E ts include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE Figure 15. Typical switching energy losses
as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 8 Rev. 2.4 May 06
V GE, G
ATE
-EM
ITTE
R V
OLT
AG
E
0nC 100nC 200nC 300nC 400nC0V
5V
10V
15V
480V
120V
c, C
AP
AC
ITA
NC
E
0V 10V 20V
100pF
1nF
C rss
C oss
C iss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge
(IC=75 A)
Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
I C(s
c), s
hort
circ
uit C
OLL
EC
TOR
CU
RR
EN
T
12V 14V 16V 18V0A
250A
500A
750A
1000A
t SC, S
HO
RT
CIR
CU
IT W
ITH
STA
ND
TIM
E
10V 11V 12V 13V 14V0s
2s
4s
6s
8s
10s
12s
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage (VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax
IKW75N60T TrenchStop Series q
Power Semiconductors 9 Rev. 2.4 May 06
Z thJ
C, T
RA
NS
IEN
T TH
ER
MA
L R
ESI
STA
NC
E
1s 10s 100s 1ms 10ms 100ms10-3K/W
10-2K/W
10-1K/W
single pulse
0.010.02
0.05
0.1
0.2
D=0.5
Z thJ
C, T
RA
NS
IEN
T TH
ER
MA
L R
ESI
STA
NC
E
100ns 1s 10s 100s 1ms 10ms100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance
(D = tp / T) Figure 22. Diode transient thermal
impedance as a function of pulse width (D=tP/T)
t rr, R
EV
ER
SE R
EC
OVE
RY
TIM
E
1000A/s 1500A/s0ns
50ns
100ns
150ns
200ns
TJ=25C
TJ=175C
Qrr, R
EV
ER
SE
RE
CO
VE
RY
CH
ARG
E
1000A/s 1500A/s0C
1C
2C
3C
4C
5C
TJ=25C
TJ=175C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as
a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)
R , ( K / W ) , ( s ) 0.1968 0.115504 0.0733 0.009340 0.0509 0.000823 0.0290 0.000119
C 1=1 /R 1
R 1 R2
C 2=2 /R 2
R , ( K / W ) , ( s ) 0.1846 0.110373 0.1681 0.015543 0.1261 0.001239 0.0818 0.000120 0.04 0.000008
C1=1/R1
R1 R2
C2=2/R2
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 10 Rev. 2.4 May 06
I rr, R
EV
ER
SE
RE
CO
VE
RY
CU
RR
EN
T
1000A/s 1500A/s0A
10A
20A
30A
40A
50A
60A
T J=25C
TJ=175C
dirr/
dt, D
IOD
E P
EAK
RAT
E O
F FA
LL
OF
REV
ER
SE
RE
CO
VE
RY
CU
RR
EN
T
1000A/s 1500A/s0A/s
-200A/s
-400A/s
-600A/s
-800A/s
-1000A/s
-1200A/s
TJ=25C
TJ=175C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current
as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)
I F, F
OR
WA
RD
CU
RR
EN
T
0V 1V 2V0A
50A
100A
150A
200A
175C
TJ=25C
V F, F
OR
WA
RD
VO
LTAG
E
0C 50C 100C 150C0.0V
0.5V
1.0V
1.5V
2.0V
75A
IF=150A
37.5A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a function of junction temperature
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 11 Rev. 2.4 May 06
PG-TO247-3-21
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 12 Rev. 2.4 May 06
Figure A. Definition of switching times
Figure B. Definition of switching losses
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+t =t tr r S F
+
Figure C. Definition of diodes switching characteristics
p(t)1 2 n
T (t)j
11
22
nn
TC
r r
r
r
rr
Figure D. Thermal equivalent circuit
Figure E. Dynamic test circuit
www.DataSheet.in
IKW75N60T TrenchStop Series q
Power Semiconductors 13 Rev. 2.4 May 06
Edition 2006-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 11/20/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
www.DataSheet.in