Post on 18-Aug-2020
The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular purpose or of any other nature are hereby made in respect of the information contained in this presentation or the product or products which are the subject of it. In providing this material, no license or other rights, whether express or implied, are given with respect to any existing or pending patent, patent application, trademarks, or other intellectual property right.
AZ 3312 Photoresist (18cps)
Data Package
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3300 Photoresist i-line Resolution at Specific Film Thickness
0.5 0.6 0.7 0.8 0.9 1.0 ~ 1.5 ~ 2Resolution (µm)
Film
Thi
ckne
ss (µ
m)
7
6
5
4
3
2
1
AZ 3350-HS
AZ 3330-F
AZ 3322-HS 2D
AZ 3318-D
AZ 3312/3312-F
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3300 Photoresist
AZ 3312 Photoresist (18cps)
High thermal stabilityGood process latitude in i-line, g-line, and broad bandResolution in i-line 0.6µm, in g-line 0.8µmExcellent for wet etch processes
AZ 3318-D Photoresist (30cps)
Dyed resistPrevents notching on substrates with high or varying reflectivityReduced swing curve
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0
1
2
3
4
5
6
7
8
9
10
0 1000 2000 3000 4000 5000 6000 7000
rpm
Film
Thi
ckne
ss [µ
m]
AZ® 3312AZ® 3318DAZ® 3312-FAZ® 3330-FAZ® 3350-HSAZ® 3322HS 2D
AZ 3300 PhotoresistSpin Speed Curves
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3300 PhotoresistFeatures & Benefits
◊
Sensitivity to g, h, and i-line wavelengths◊
Process relatively insensitive to bake conditions, develop times, and develop temperatures
◊
Compatible with inorganic and organic (w/ & w/o surfactant) developers
◊
Thermal stability to 125°◊
Good depth of focus, linearity, and photospeed for crossover applications
◊
Very high stability against particle generation◊
Excellent value for performance
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps) Optical Parameters
◊
Refractive Index
Bleached 365nm 405nm 435nmn 1.6906 1.6655 1.6514k 0.0013 0.0003 0.0006
Unbleachedn 1.7082 1.6888 1.6930k 0.0333 0.0336 0.0217
Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps) Optical Parameters
◊
Dill Parametersi-line: g-line:
A = 1.1390 (µm-1) A= 0.6695 (µm-1)B = 0.0762 (µm-1) B= 0.0172 (µm-1)C = 0.0264 (cm2/mJ) C= 0.0186 (cm2/mJ)
◊
Cauchy CoefficientsA B C
Bleached 1.5869 0.011818 3.90E-06Unbleached 1.6005 0.011334 7.43E-04Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps) Optical Parameters - Absorptivity
0
0.01
0.02
0.03
0.04
0.05
0.06
300 350 400 450 500 550 600 650Wave Length, nm
Abso
rptiv
ity
345 nm
405nm428 nm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps) Development Parameters
◊
PROLITH™ Modeling ParametersOrg. Mack Adv. Mack Mack Notch
Rmax (nm/s) 125.00 127.04 125.048Rmin (nm/s) 1.95 2.33 1.95Mth -218208.00 ---- ----n 3.71 3.44 3.71Rresin (nm/s) ---- 7.00I ---- 1.39Mth notch ---- ---- 1.00n notch ---- ---- 1.10Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps) Suggested Process Conditions
⇒Spray/Puddle Process:– Softbake 90° -110° C, – 60 - 90 sec– Expose: g-line, h-line, i-line
stepper or broadband exposure source
– Where necessary, PEB: 110°C, 60 - 90 sec.
– Develop: AZ 300 MIF developer, 60 sec. spray- puddle
⇒Double Puddle Process:– Softbake 90° -110°C, – 60 - 90 sec– Expose: g-line, h-line, i-
line stepper or broadband exposure source
– Where necessary, PEB: 110°C, 60 - 90 sec.
– Develop: AZ 917 MIF developer, 52 sec. double puddle
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
DO NOT RESIZE THIS CHART OR SPREADSHEET! THE SIZE IS IMPORTANT FOR EXPORTING TO POWERPOINT.
20
30
40
50
60
70
0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
Film Thickness [µm]
Dos
e-to
-Cle
ar [m
J/cm
² ]AZ 3312 Photoresist (18 cps)
i-Line Swing Curve
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNIKON 0.54 NA i-Line
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)g –Line Swing Curve
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec Spray-puddle @23°CGCA 0.42 NA g-Line
50
55
60
65
70
75
80
85
90
95
100
0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4
Film Thickness [µm]
Ener
gy [m
J/cm
² ]
AZ 3312 Photoresist (18 cps)
Film Thickness 0.974 µm @ Emax Exposure with NIKON 0.54 NA i-line Stepper
Using AZ 300 MIF Developer
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.250.300.350.400.450.500.550.600.650.700.750.800.850.90
0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80
Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²100 mJ/cm²110 mJ/cm²
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.6µm 0.4 µm0.45 µm0.5 µm
0.36 µm
0.34 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.6µm 0.4 µm0.45 µm0.5 µm
0.36 µm
0.34 µm0.32 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.6µm 0.4 µm0.45 µm0.5 µm
0.36 µm
0.34 µm0.32 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.60 µm L/S DOF on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
0.300.350.400.450.500.550.600.650.700.750.800.850.90
-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²
100 mJ/cm²
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.2µm -0.2 µm-0.6 µm-1.0 µm
0.0 µm
0.2 µm0.6 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.2µm -0.2 µm-0.6 µm-1.0 µm
0.0 µm
0.2 µm0.6 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.2µm -0.2 µm-0.6 µm-1.0 µm
0.0 µm
0.2 µm0.6 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.45
0.5
0.55
0.6
0.65
0.7
0.75
50 60 70 80 90 100 110 120 130 140 150
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]
AZ 3312 Photoresist (18 cps)0.60 µm L/S Exposure Latitude on Silicon, FT = 0.974 µm
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNikon 0.54 NA i-Line
92 mJ/cm2
40% Exposure Latitude
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.50 µm L/S DOF on Silicon for Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
0.20
0.30
0.40
0.50
0.60
0.70
0.80
-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²100 mJ/cm²110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1µm -0.2 µm-0.6 µm-0.8 µm
0.0 µm
0.2 µm0.6 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1µm -0.2 µm-0.6 µm-0.8 µm
0.0 µm
0.2 µm0.6 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Dense Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1µm -0.2 µm-0.6 µm-0.8 µm
0.0 µm
0.2 µm0.6 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.35
0.4
0.45
0.5
0.55
0.6
0.65
50 60 70 80 90 100 110 120 130 140 150
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]AZ 3312 Photoresist (18 cps)
0.50 µm L/S Exposure Latitude on Silicon, FT = 0.974 µm
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNikon 0.54 NA i-Line
89 mJ/cm2
36% Exposure Latitude
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Isolated Lines, FT = 0.974 µm
0.140.200.260.320.380.440.500.560.620.680.740.800.86
0.26 0.31 0.36 0.41 0.46 0.51 0.56 0.61 0.66 0.71 0.76
Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²100 mJ/cm²110 mJ/cm²
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.75µm 0.36 µm0.45 µm0.55 µm
0.34 µm
0.30 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.75µm 0.36 µm0.45 µm0.55 µm
0.34 µm
0.30 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.75µm 0.36 µm0.45 µm0.55 µm
0.34 µm
0.30 µm0.28 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.60 µm L/S DOF on Silicon for Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
0.300.350.400.450.500.550.600.650.700.750.800.850.90
-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²100 mJ/cm²110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.50 µm L/S DOF on Silicon for Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
90 mJ/cm²100 mJ/cm²110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
90 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
100 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Isolated Lines, FT = 0.974 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
-1.4µm -0.6 µm-1 µm-1.2 µm
0.0 µm
0.4 µm0.6 µm
110 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
-1.30 -0.90 -0.50 -0.10 0.30 0.70 1.10Focus [µm]
Mea
sure
d Li
newid
th [µ
m]
0.5 µm0.6 µm0.65 µm0.7 µm
SB: 90°C/ 60 sec, Nikon i-line, 0.54 NAPEB: 110°C/ 60 secAZ 300 MIF developer/ double puddle 52 sec
AZ 3312 Photoresist (18 cps)Contact Hole Focus Latitude, FT = 1.076µm
140 mJ/cm2
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.7 µmContact Holes, FT=1.076 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
1.25µm 0.0 µm0.5 µm1.0 µm
-0.5 µm
-1.0 µm-1.25µm
140 mJ/cm2
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Contact Holes, FT=1.076 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
1.25µm 0.0 µm0.5 µm1.0 µm
-0.5 µm
-1.0 µm-1.25µm
140 mJ/cm2
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.5 µm Contact Holes, FT=1.076 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,
0.0 µm0.5 µm1.0 µm -0.5 µm
-1.0 µm
-1.25µm
140 mJ/cm2
AZ 3312 Photoresist (18 cps)
Film Thickness 1.17 µm @ Emax Exposure with GCA 0.42 NA g-line Stepper
Using AZ 300 MIF Developer
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.450.500.550.600.650.700.750.800.850.900.951.001.051.10
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
125mJ/cm²
135 mJ/cm²
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CGCA 0.42 NA, g-Line
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
0.90µm 0.65 µm0.70 µm0.80 µm
0.60 µm
0.55 µm
125 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
0.90µm 0.65 µm0.70 µm0.80 µm
0.60 µm
0.55 µm0.50µm
135 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ® 3312 Photoresist (18 cps)0.7 µm L/S DOF on Silicon for Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ® 300 MIF Developer at 23°CGCA 0.42 NA, g-Line
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
-3.60 -3.00 -2.40 -1.80 -1.20 -0.60 0.00 0.60 1.20 1.80
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
125mJ/cm²
135 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.7 µm Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
1.8µm 0.0 µm0.3 µm0.9 µm
-1.2 µm
-2.1 µm
125 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.7 µm Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
0.0 µm0.3 µm0.9 µm -1.2 µm
-2.1 µm
-2.7µm
135 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
mJ/cm2%
0.80
0.90
1.00
1.10
1.20
1.30
180 190 200 210 220 230 240 250 260 270 280Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]
0.50
0.60
0.70
0.80
0.90
95 105 115 125 135 145 155 165 17
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]AZ 3312 Photoresist (18 cps)
0.7 µm L/S Exposure Latitude on Silicon, FT = 1.171 µm
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ® 300MIF, 60 sec Spray-puddle Developer @23°CGCA 0.42 NA, g-Line
121 mJ/cm2
26% Exposure Latitude
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.65 µm L/S DOF on Silicon for Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CGCA 0.42 NA, g-Line
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
-3.60 -3.00 -2.40 -1.80 -1.20 -0.60 0.00 0.60 1.20 1.80
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
125mJ/cm²
135 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.65 µm Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
1.8µm 0.0 µm0.3 µm0.9 µm
-1.2 µm
-2.1 µm
125 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.65 µm Dense Lines, FT = 1.17 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
0.0 µm0.3 µm0.9 µm -1.2 µm
-2.1 µm
-2.7µm
135 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)0.65 µm L/S Exposure Latitude on Silicon, FT = 1.171 µm
0.50
0.55
0.60
0.65
0.70
0.75
110 120 130 140 150 160 170
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]
139 mJ/cm2
17 % Exposure Latitude
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF, 60 sec Spray-puddle Developer @23°CGCA 0.42 NA, g-Line
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
0.7 µm0.8 µm0.9 µm
SB: 90°C/ 60 secGCA g-line, 0.42 NAPEB: 110°C/ 60 secAZ 300 MIF Developer/ 60 s spray puddle.
AZ 3312 Photoresist (18 cps)Contact Hole Focus Latitude, FT = 1.171µm
180 mJ/cm2
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.9 µm Contact Holes, FT=1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
1.5µm -0.5 µm0.3 µm1.1 µm
-1.3 µm
-2.1 µm-2.5µm
180mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.8 µm Contact Holes, FT=1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
1.5µm -0.5 µm0.3 µm1.1 µm
-1.3 µm
-2.1 µm
180mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.7 µm Contact Holes, FT=1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line
1.5µm -0.5 µm0.3 µm1.1 µm
-1.3 µm180mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.500.600.700.800.901.001.101.201.301.40
0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25
Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
230 mJ/cm²240 mJ/cm²250 mJ/cm²
AZ 3312 Photoresist (18 cps)Broadband, Linearity on Silicon, FT = 1.171 µm
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF Developer, 60 sec Spray-puddle Developer @23°CUltratech 1500 0.32 NA, Broadband
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CUltratech 1500, 0.32 NA, Broadband
1.0µm 0.8 µm0.85 µm0.9 µm
0.75 µm
0.7 µm0.65µm
220 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CUltratech 1500, 0.32 NA, Broadband
1.0µm 0.8 µm0.85 µm0.9 µm
0.75 µm
0.7 µm0.65µm
230 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF for 1.0 µm Dense Lines on Silicon, FT = 1.171 µm
0.65
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
-2.50 -2.00 -1.50 -1.00 -0.50 0.00 0.50 1.00 1.50
Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
230 mJ/cm²
240 mJ/cm²
250 mJ/cm²
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF Developer, 60 sec Spray-puddle Developer @ 23 °CUltratech 1500 0.32 NA, Broadband
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 1.0 µm Dense Lines, FT = 1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CUltratech 1500, 0.32 NA, Broadband
1.2µm -0.6 µm0.0 µm0.6 µm
-1.2 µm
-1.5 µm-2.0µm
220 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)DOF on Silicon for 1.0 µm Dense Lines, FT = 1.171 µm
SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CUltratech 1500, 0.32 NA, Broadband
1.2µm -0.6 µm0.0 µm0.6 µm
-1.2 µm
-1.5 µm-2.0µm
230 mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
mJ/cm2%
0.80
0.90
1.00
1.10
1.20
1.30
180 190 200 210 220 230 240 250 260 270 280Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]
0.80
0.90
1.00
1.10
1.20
180 190 200 210 220 230 240 250 260 270 280
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]AZ 3312 Photoresist (18 cps)
1.0 µm L/S Exposure Latitude on Silicon, FT = 1.171 µm
Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF, 60 sec Spray-puddle Developer @23°CUltratech 1500 0.32 NA, Broadband
221 mJ/cm2
35 % Exposure Latitude
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312 Photoresist (18 cps)Thermal Stability, 120 sec Hard Bake
FT = 1.187µmSB: 90°C, 60 sec; PEB: 110°C, 60 secSpray Puddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line
No bake 125°C
130°C
120°C115°c