Ehrenfried Zschech and Martin Gall | Fraunhofer IKTS Dresden | Germany |

ehrenfried.zschech@ikts.fraunhofer.de

ADVANCED MATERIALS CHARACTERIZATION AT THE

MICRO- AND NANOSCALE

BET-EU Consortium Meeting | University of Cambridge, 5/6 September 2016

Picture: NovaledPicture: Fraunhofer IPMS Picture: GLOBALFOUNDRIES

Fraunhofer Institute for Ceramic Technologies and

Systems IKTS - Our Business Divisions

MATERIALS ANDPROCESSES

MECHANICAL AND AUTOMOTIVE ENGINEERING

ELECTRONICS ANDMICROSYSTEMS

ENERGYMATERIALS ANDPROCESS ANALYSIS

OPTICS

BIO- AND MEDICALENGINEERING

ENVIRONMENTAL ANDPROCESSENGINEERING

SYSTEMS

EXPERTISE

TECHNOLOG

Y

EXPERTISE

MATERIALS

EXPERTISE

MATERIALS

DIAGNOSTICS

Reliability and

Quality Assurance

GLOBAL SOCIAL MEGATRENDS:SMART THINGS EVERYWHERE

Quelle

: iS

tockphoto

Climate change

Demographic change

Safe living and

working in megacities

Reduction and dynamic

product life cycles

GlobalizationIndividuality of

the markets

Knowledge-

based society

Mobility and

Energy Efficency

technical assistance,

biocompatible sensors,

Lab-on-Chip systems,

point-of-care diagnosis

Smart Grid,

power electronics,

high-voltage packaging

Sensor networks, Industry 4.0,

Cyber physical systems,…

electronics for product

tracking, copy protection

Internet of Things,

RFID-Integration

E-Mobility,

networked cars,

EMC, energy

efficient electronics

fast data

transmissionSecure electronic documents,

secure identification,

protection systems

Micro- and Nanoelectronics:Explosion of complexity and application variety

Driving forces: Functionality, Mobility, Connectivity, Communication, Access to data, …Internet of things, Industry 4.0, …

Scali

ng

: M

ore

Mo

ore

Bas

eli

ne

CM

OS

: C

PU

, M

em

ory

, L

og

ic

130nm

90nm

65nm

45nm

32nm

22nm

Beyond CMOS

Functional Diversification: More than Moore

Analog/RF Passives HV PowerSensors

Actuators

Biochips

Fluidics

Information

Processing

Digital content &

System-on-Chip

(SoC)

Interacting with people and environment

Non-digital content &

System-in-Package (SiP)

New processes

and new materials

Perspectives for IT industry and nanoelectronics: Scaling

„More Moore“ and functional diversification „More than

Moore“

From International Technology Roadmap for Semiconductors: http://www.itrs.net

Materials characterization - also the determination of micro-and nanomechanical properties of materials – is key for success of advanced applications

■ Market (Global Megatrends, Lifestyle, …)

■ Societal Challenges

■ Industrial Leadership and Competitiveness

Advanced Technologies and Materials for Innovative Products

Materials characterization for development and manufacturing of innovative products

… Technology and Product Development

… Process Control

… Quality Control and Reliability Engineering

Mechanical properties of thin film materials, reliability andstability assessment

o Delamination characterization and crack propagation studies

o Integration of advanced, new materials into the new technological application

(influence of process-related issues, interfaces, compositional gradients)

o Thermomechanical parameters such as Young‘s modulus and hardness of

various thin film materials in the process (isolators, metals, electronic device

components, “smeared composite stacks“, etc.)

o Fracture toughness of thin films

o Plus further issues as the technology advances

www.mentor.com© 2012 Mentor Graphics Corp. Company Confidential

Mechanical stress caused by IC architecture and packaging impacting MOSFET characteristics/performance and product reliability

Future trends: 3D integration and thin substrates / dies

Courtesy: Valeriy Sukharev, Mentor Graphics

Relentless Reduction of Phone Thickness: ~ 5mm ?

Driving Merciless Reduction in Component Thickness: ~ 0.5mm ?

Driving Merciless Reduction in Si thickness: ~ 0.05mm ?

Future trends: Mobile phones “thin is in”

Courtesy: Riko Radojcic, Qualcomm

Die thinness = The new issue

64GB NAND iPad

4

50u thin Wafer

Die

Th

ickn

ess (

µm

)

0

50

100

150

200

250

Apple Samsung Qualcomm Allwinner MediaTek Huawei

Mobile Application Processor Die Thickness (µm)

0

100

200

300

400

500

600

Core i5 ATOM Z3740 HASWELL i5-4250U Broadwell-Y

Intel Processor Die Thickness (µm)

in Ultrabook and Mobile Application

Die

Th

ickn

ess (

µm

)

Si is getting awfully thin

As processed wafer : ~ 775 um

Intel ultrabook and mobile application: ~ 200 µm – 500 um

Mobile chips: ~ 85µm ~ 200µm

PoP

<50u

~100u

Courtesy: Riko Radojcic, Qualcomm

Sensitivity of carrier mobility to stress effects is an

exponential function (increased for thinner silicon)!

Region of very high sensitivity of carrier mobility on stress

3D stacks= “canary in the mine”

Future trends: Effect of extremely thin dies for mobile applications (3D stacking technology) and effect on transistor performance

Courtesy: Riko Radojcic, Qualcomm

In-situ SEM/FIB Tester PI87

• Electrical measurements

• FIB, EDX, EBSD

Zeiss Nvision 40

In-situ TEM

Tester PI95

• Heating

• Electrical

measurements

Zeiss Libra 200

Xradia nanoXCT-100

(now Carl Zeiss Ultra)

In-situ nanoXCT Tester

(Fraunhofer IKTS Dresden)

• Heating

• Different atmospheres

In-situ mechanical studies and multi-scale imaging

@ Fraunhofer IKTS Dresden

TriboIndenter

TI950

• Nano-/Micro-

indenter

• Tribological

tester

Probe and Sample Geometries: Nanoindentation

Probe geometries

Berkovich Sphere

Cube corner Flat punch

Sample geometries

Materials microstructure Small Features

Thin Films

Hardness and Modulus Mapping

Courtesy of Hysitron Inc.

Hardness map Young’s modulus map

Normal and Lateral Loaded Experiments, Tribological

Testing

Poisson‘s ratio determination

Tribologicaltesting

Scratch tests (film adhesion, scratch hardness, …)

Wear studies-25

-20

-15

-10

-5

0

5

10

15

20

25

0 2 4 6 8

Tie

fe/n

m

x/µm

SPM scan of a Scratch test

SPM scan of a Wear test

In-Situ SEM/FIB Mechanical Testing

Zeiss Nvision 40

Hysitron PI87Micropillar compression for stress/strain

determination

Access to EDX, EBSD, FIB, and electrical testing

Multiphysical materials property mapping (also 3D using FIB)

In-Situ TEM Mechanical Testing

Zeiss Libra 200

Hysitron PI95 Push-to-Pull device for tensile tests

Heating stage (400°C)

Courtesy of Hysitron Inc.

Compression of a CdS particle (abrasive)

In-situ nanoXCT Mechanical Testing

additional heating stage

Reaction/atmosphere

chamber

Xradia nanoXCT-100 (now Carl Zeiss Ultra)

Custom built mechanical tester

Compression of an Al2O3 particle

Crack propagation in polymer composite film

In-situ DCB adhesion tester

Quantitative Adhesion Measurement Techniques

Four Point Bending Double Cantilever Beam

DTS

Delamination Tool

DCB test with optical setup

crack length

independent

data analysis

Fracture Modes

Mode I Mode II Mode III

4 Point Bend

Double Cantilever Beam

New geometries to be developed

“Twister Concept”

mixed mode loading (I, II + III)

Multi-Scale Materials Database for Full-System Simulation

and Process Optimization

Definition and development of a

multiscale materials database as

an input for simulations to

optimize for yield, quality,

performance and reliability

Yield, quality, performance and

reliability optimization

Overview of dimensions and

characterization methods needed

for the development of the multi-

scale materials database

Scanning Electron Microscopy (Zeiss Nvision 40)

Destructive and nondestructive analysis of

wafers, dies, components and modules

• Cross sections by cleaving or grinding and

polishing

• Top-down delayering and imaging

• Materials analysis using EDX

• Low Energy T-SEM (<30keV)

SEM imaging

In-Situ T-SEM imaging

Focused Ion Beam (Zeiss Nvision 40)

Examples of applications

• Site specific FIB cross

section (a)

• TEM lamella

preparation,

liftout (b)

• Channeling contrast of

polycrystalline

materials (c)

• Micromachining

• Circuit modification

• Plus various other

options…

3d-Bilda

a

b

c

Nanoprober in the SEM and EDX (elemental mapping)

-5,00-4,00-3,00

-2,00-1,000,001,00

-10-9-8-7-6-5-4-3-2-1 0 1 2 3 4 5 6 7 8 910

Voltage (V)

current (µA)

Nanoprober: Measurement of I-V-

Characteristics, Lift out preparationEDX: Element Mapping (e.g. solder bump)

Transmission Electron Microscopy (Zeiss Libra 200 MC Cs

STEM)

Highest resolution up to lattice imaging

• TEM and STEM for structural

investigations

• EDX and EELS for elemental analysis

and chemical binding states

• Tomography for 3D-observations

• In-situ techniques for electrical,

mechanical and thermal experiments Imaging of Graphene in atomic

resolution.

Elemental Analysis with Subnanometer Resolution

EELS-analysis along a line, sectioning a layered

stack in a microelectronic device

a) STEM-image for definition of

ROI and drift correction

b) Series of spectra

c) Single spectrum in SiOxNy

a

b

c

N-edge

O-edge

X-Ray Microscopy & Computed Tomography

Zeiss/Xradia nano-XCT:

• Resolution (nominal Pixel Size):

large field of view: 65 nm

high resolution: 30 nm

• Imaging, Mosaic, Tomography

• Absorption contrast

• Development of next generation

X-ray lenses

Imaging 3D microelectronic structures, e.g. identification of Cu

(orange) and AgSn solder (blue) in the volume (3D stack)

20µm

Thank you!

Contact: ehrenfried.zschech@ikts.fraunhofer.de

martin.gall@ikts.fraunhofer.de

Picture: NovaledPicture: Fraunhofer IPMS Picture: GLOBALFOUNDRIES