Post on 23-Apr-2020
200mm Next Generation MEMS
Florent Ducrot
Technology update
External Use
Solar
The Most Exciting Industries on Earth
20,000,000xreduction in
COST PER TRANSISTOR
in 30 years1
20xreduction in
COST PER AREA
in 15 years2
3xreduction in
COST PER WATT
in 4 years
At 1976 transistor prices,an iPod® would have cost $3.2B
1 Source: SIA, IC Knowledge LLC2 Source: Display Search, Nikkei BP, Applied Materials
DisplaySemiconductor
External Use
Continued Technology Development
Discrete
Power
Analog
LED
MEMS
TFB
& Others
200mm market growth
driven by consumer
electronics, automotive,
industrial and medical
applications
APPLIED MATERIALS
Over 40 years oftechnology development to enable life-changing innovations
* All images used with owners permission
External Use
Expansion of MEMS Capabilities Applied Materials Supports MEMS Production and R&D
Working within the
Global MEMS
Community…
DEVELOPING NEW EQUIPMENT, MATERIALS AND PROCESSES FOR MEMS
Thick Aluminum (Al)
High Power Devices
Aluminum Nitride (AlN)
RF and Mechanical
ApplicationsSub-Micron MEMS
External Use
200mm MEMS Equipment PortfolioApplied Materials is growing its ≤200mm MEMS portfolio
External Use
Latest DRIE Technologies
No In-Situ Chamber Clean allows best in class wafer throughput and extends Mean Time Between Cleans far beyond 500 RF Hrs !
Tunable Source Coil Technology enables WIW etch depth and sidewall profile nu. < 2 %
Hard Mask-Open Capability with dielectric etch rates approaching 750nm/min !
High Speed Gas Switching enabling Bosch process with << 1sec etch and deposition times
Low Temperature (-20°°°°C) Capability for increased selectivity and sidewall profile control
Pulsed High Power Low Frequency Generator
eliminating undercut on SOI wafers
Parameter Ramping with enhanced recipe control
New DPS DTM Chamber (Actual Photo Shown)
NEW DPS DTM DRIE Chamber for MEMS, Power Devices and TSV
Demo Ready
External Use
Next Generation DRIE Capability
7
400 nm
Excellent End Point and Notch
Control in SOI Applications !
High Etch Rates (≤22µm/min)
and Fine Profile Control for TSV
Low Mask Undercut (17nm) and
Ultra-Small Sidewall Scallops (13nm)
Ultra-High Aspect Ratio Sub-Micron
MEMS Applications
Demo Ready
External Use
Advanced Deposition Processes
Thick (≤40µm) CVD SiO2
Silicon
SiO2 Layer
High Dep Rate PVD GePVD AlN (≤2.5µm)(nu. << 0.5%)
ECD Metal (>100µm)
Adding new film processes in support of MEMS
Epi-Silicon (≥ 50µm)
Demo Ready
Ge Layer
Al Layer
Si Layer
Single Step (≥10µm) Low Temp SiGe
Applied Materials Confidential 9
Conclusion
For More information about Applied Materials
MEMS product portfolio please contact Applied Materials Sales.
Applied Materials is continuing to expand its MEMS product portfolio with the aim of providing a complete MEMS solution in support of all process technologies that are critical to MEMS development.
Applied Materials currently offers DRIE, CVD, PVD, CMP and Metrology Tools for MEMS.
www.AppliedMaterials.com/mems
External Use11
MEMS CVD – SiGe
Parameters Target Requirement Actual
Wafer to wafer uniformity +/- 5% <3%
Within wafer uniformity +/-3% <2% 1 sigma
Ge content 60 – 65% ≥ 60%
Thickness 5 – 10um ≥10µm
Conformality Fill 2:1 aspect ratio TBD
Maximum temperature 425C ≤ 420C
Deposition rate >100nm/min 236nm/min
Resistivity < 5mΩ-cm < 4 mΩ-cm
Residual stress 100 - 150MPa comp 130MPa comp
Strain gradient < 5x10-5µm-1 TBD
Offering Low Temp, High Dep Rate Films for CMOS Compatible MEMS
SiGe Layer on SiH4 USG
SiGe Layer on Thermal SiGe SeedCurrently the only Single Step/Pass
Process For Low Temp, Thick SiGe Films !
Demo Ready
External Use12
MEMS CVD – Thick OxidePECVD TEOS Or SiH4 based Low Temperature, Thick Oxide (≥22µm)
Parameters TEOS SiH4
Within wafer uniformity 1.18 % 0.98 %
Thickness per Pass >5 um >5 um
Maximum temperature ≤350°C ≤350°C
Deposition rate >1300 nm/min >2300 nm/min
Residual stress -43 MPa -48 MPa
Refractive Index 1.4549 1.4789
Defects 138 (> 0.2um) 20 (> 0.2um)
Single pass 5µm deposition, no clean required
Target Applications Include: MEMS
Photonics
≥ 20µm Thick PECVD TEOS
Demo Ready
External Use13
Aluminum Nitride (AlN)
AlN for Production at Both 6” and 8” Wafer Sizes
ParametersTarget
RequirementActual
WIW Uniformity (6’ / 8”) < 0.5% / <1.0 % < 0.5 % (6”) << 1% (8”)
Thickness 800nm – 2.5µm Tunable
Deposition rate >80 nm/min > 85nm/min
FWHM Rocking Curve ≤ 1.65 ≤ 1.3
Maximum temperature 450°C ≤ 400°C
Stress -100MPa to 400MPa Tunable
Refractive Index 2.08 ± 0.2 2.0723
Surface Roughness < 2.5nm 1.5nm
Applications in RF Devices and MEMS Actuator Devices
AlN Layer on Mo(Deposited on 8” Wafer)
Demo Ready – Oct’12
External Use14
PVD Ge Films
Often used as a Bonding Layer and Electrical Interconnect
Parameters Actual
WIW Uniformity < 2.6 %
Thickness ≥ 540nm
Deposition rate > 260 nm/min
Maximum temperature < 400°C
Stress 221 MPa
Bulk Resistivity (Ohm.cm) ~ 48
Surface Roughness ~3.78 nm
Ge Layer
Al Layer
Si Layer
Roughness ~ 3.78nmTilted View of Top Surface
High Deposition Rate Ge Process For Thick Ge Films
Demo Ready